BDX6B ISC | Alldatasheet

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Technical content

INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconPNPDarlingtonPowerTransistor BDX66/A/B/C

DESCRIPTION

  • CollectorCurrent-IC=-16A
  • HighDCCurrentGain-hFE=1000(Min)@ IC=-10A
  • ComplementtoType BDX67/A/B/C

APPLICATIONS

  • Designedforaudio outputstagesand generalamplifier andswitchingapplications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage BDX66 -80 V BDX66A -100 BDX66B -120 BDX66C -140 VCEO Collector-Emitter Voltage BDX66 -60 V BDX66A -80 BDX66B -100 BDX66C -120 VEBO Emitter-BaseVoltage -5 V IC CollectorCurrent-Continuous -16 A ICM CollectorCurrent-Peak -20 A IB BaseCurrent-Continuous -0.25 A PC CollectorPowerDissipation @TC=25℃ 150 W TJ JunctionTemperature 200 ℃ Tstg StorageTemperatureRange -55~200 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 1.17 ℃/W

INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconPNPDarlingtonPowerTransistor BDX66/A/B/C ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter SustainingVoltage BDX66 IC=-50mA;IB=0 -60 V BDX66A -80 BDX66B -100 BDX66C -120 VCE(sat) Collector-EmitterSaturationVoltage IC=-10A;IB=-40mA -2 V VBE(on) Base-EmitterOnVoltage IC=-10A;VCE=-3V -2.5 V VECF C-EDiodeForwardVoltage IF=-10A -2 V ICEO CollectorCutoffCurrent VCE=1/2VCEOmax;IB=0 -1 mA ICBO CollectorCutoffCurrent BDX66 VCB=-40V;IE=0;TJ=150℃ -5 mA BDX66A VCB=-50V;IE=0;TJ=150℃ BDX66B VCB=-60V;IE=0;TJ=150℃ BDX66C VCB=-70V;IE=0;TJ=150℃ ICBO CollectorCutoffCurrent VCB=VCBOmax;IE=0 -1 mA IEBO EmitterCutoffCurrent VEB=-5V;IC=0 -5 mA hFE-1 DCCurrentGain IC=-1A;VCE=-3V 2000 hFE-2 DCCurrentGain IC=-10A;VCE=-3V 1000 hFE-3 DCCurrentGain IC=-16A;VCE=-3V 1000 COB OutputCapacitance IE=0;VCB=-10V;ftest=1MHz 300 pF Switchingtimes ton Turn-onTime IC=-10A;IB1=-IB2=-40mA 1 μs toff Turn-offTime 3.5 μs