MMDT3904 HOTTECH | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Page:P2-P1 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FE A TURES Epitaxial planar dieconstruction Ideal for low pow eramplificationand switching MARKING :K 6N MAXIMUM RA TINGS (TA=25 unless otherwise noted) Parameter Symb ol V alue Unit Collector-Base V oltage V CBO 60 V Collector-EmitterV oltage V CEO 40 V Emitter-Base V oltage V EBO 5 V Collector Current-Continuous IC 200 Collector Pow er Dissipation IC 200 Junction Temperature TJ 150 StorageTemp erature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Param eter Sym bol Test conditions M in T yp M ax U nit Collector-base breakdow n voltage V CBO IC =10μA,IE=0 60 V Collector-emitter breakdow n voltage V CEO IC =1mA,IB =0 40 V Emitter-base breakdow n voltage V EBO IE=10μA,IC =0 5 V Collector cut-off current ICBO V CB =30V ,IE=0 0.05 μA Emittercut-offcurrent IEBO V EB =5V ,IC =0 0.05 μA DC current gain hFE(1) V CE =1V ,IC =0.1mA 40 hFE(2) V CE =1V ,IC =1mA 70 hFE(3) V CE =1V ,IC =10mA 100 300 hFE(4) V CE =1V ,IC =50mA 60 hFE(5) V CE =1V ,IC =100mA 30 Collector-emitter saturationvoltage V CE(sat)1 IC =10mA,I B =1mA 0.2 V V CE(sat)2 IC =50mA,I B =5mA 0.3 V Base-emitter saturationvoltage V BE(sat)1 IC =10mA,I B =1mA 0.65 0.85 V V BE(sat)2 IC =50mA,I B =5mA 0.95 V Transitionfrequency fT V CE =20V ,IC =10mA,f=100MHz 300 MHz Collector output capacitance C ob V CB =5V ,IE=0,f=1MHz 4 pF Noise figure NF V CE =5V ,Ic=0.1mA,f=1kHz,R S=1KΩ 5 dB Dela y time td V CC =3V ,V BE(off)=-0.5V IC =10mA ,IB1 =-IB2 = 1mA 35 nS Rise time tr 35 nS S torage time tS V CC =3V ,IC =10mA IB1 =-IB 2=1mA 200 nS Falltime tf 50 nS MM DT 3904(NP N ) E B C C B E SOT -363 mW mA
Page:P2-P2 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. MM DT 3904 Typical Characteristics