MMDT2907A HOTTECH | Alldatasheet
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Page:P2-P1 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FE A TURES Compleme ntary PNP Type available MMDT29 MARKING :K 2F MAXIMUM RA TINGS (TA=25 unless otherwise noted) Parameter Symbol V alue Unit Collector-Base V oltage V CBO -60 V Collector-EmitterV oltage V CEO -60 V Emitter-Base V oltage V EBO -5 V Collector Current-Continuous IC -600 Collector Pow er Dissipation IC 200 Junction Temperature TJ 150 StorageTemp erature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unlessotherwise specified) Parameter Symbol Test conditions M in M ax U nit Collector-base breakdow n volt age V CBO IC = -10 μ A, IE=0 -60 V Collector-emitter breakdow n volt age V CEO IC = -10mA, IB =0 -60 V Emitter-base breakdow n volt age V EBO IE=-10 μ A, IC =0 -5 V Collector cut-off current ICBO V CB =-50V , IE=0 -10 nA Collector cut-off current ICEX V CE =-30V ,V EB(O ff =-0.5V -50 nA Emittercut-offcurrent IEBO V EB =-5V ,IC =0 -10 nA DC current gain h FE(1) V CE =-10V , IC = -0.1mA 75 h FE(2) V CE =-10V , IC = -1mA 100 h FE(3) V CE =-10V , IC =-10mA 100 h FE(4) V CE =-10V , IC = -150mA 100 300 h FE(5) V CE =-10V , IC =-500mA 50 Collector-emitter saturationvoltage V CE ( sat)1 IC =-150mA, IB =-15mA -0.4 V V CE(sat)2 IC =-500mA, IB =-50mA -1.6 V Base-emitter saturation voltage V BE(sat)1 IC =-150mA, IB =-15mA -1.3 V V BE(sat)2 IC =-500mA, IB = -50mA -2.6 V Transition fre qu enc y fT V CE =-20V , IC = -50mA, f=100M Hz 200 MHz O u tp utCa p acitance C ob V CB =-10V , IE= 0,f=1MHz 8 pF Inp ut Ca p acitance C ib V EB =-2V ,IC = 0,f=1MHz 30 pF Dela y time td V CC V C 50mA, I 15mA 10 nS Rise time t r nS S torage time tS V CC =-6V ,IC =-150mA, IB1 = IB 2= -15mA 225 nS Falltime tf 60 nS MM DT2907A (PNP) 222A E B C C B E SOT -363 mW mA
Page:P2-P2 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. MM DT2907A Typical Characteristics