MMDT2227 JIANGSU | Alldatasheet

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT2227 FEATURE z Epitaxial planar die construction z One 2222A NPN One 2907A PNP z Ideal for power amplification and switching MARKING: K27 NPN 2222A MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage 75 V V CEO Collector-Emitter Voltage 40 V V EBO Emitter-Base Voltage 6 V I C Collector Current -Continuous 600 mA P C Collector Power Dissipation 200 mW T J Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) P a r a m e t e r Symbol Test conditions M in Max Unit Collector-base breakdown voltage V (BR)CBO I C = 10μA, I E =0 75 V Collector-emitter breakdown voltage V (BR)CEO I C = 10mA, I B =0 40 V Emitter-base breakdown voltage V (BR)EBO I E =10μA.I C =0 6 V Collector cut-off current I CBO V CB = 60V, I E =0 10 nA Collector cut-off current I CEX V CE = 60V,V EB(off) =3V 10 nA Emitter cut-off current I EBO V EB = 3 V, I C =0 10 nA h FE(1) V CE =10V, I C = 0.1mA 35 h FE(2) V CE =10V, I C = 1mA 50 h FE(3) V CE =10V, I C = 10mA 75 h FE(4) V CE =10V, I C = 150mA 100 300 h FE(5) V CE =10V, I C = 500mA 40 DC current gain h FE(6) V CE =1V, I C = 150mA 35 V CE(sat)1 I C =150mA, I B = 15mA 0.3 V Collector-emitter saturation voltage V CE(sat)2 I C =500mA, I B = 50mA 1 V V BE(sat)1 I C =150mA, I B =15mA 0.6 1.2 V Base-emitter saturation voltage V BE(sat)2 I C =500mA, I B = 50mA 2 V Transition frequency f T V CE =20V, I C = 20mA, f=100MHz

300 MHz

V CB =10V, I E =0,f=1MHz 8 pF Input Capacitance C ib V EB =0.5V,I C = 0,f=1MHz 25 pF Noise Figure NF V CE =10V, I C =100μA, f=1KHz,Rs=1KΩ 4 dB pulse test SOT-363 JC(T www.cj-elec.com 1 D,Mar,2016www.cj-elec.com DUAL TRANSISTOR (NPN+PNP)

Parameter Symbol Test c onditions Min Max Unit Delay time t d 10 ns Rise time t r 25 ns Storage time t S 225 ns Fall time t f V CC =30V, I C =150mA, V BE(off) =0.5V,I =15mA 60 ns PNP 2907A MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage -60 V V CEO Collector-Emitter Voltage -60 V V EBO Emitter-Base Voltage -5 V I C Collector Current -Continuous -600 mA P C Collector Power Dissipation 200 mW T J Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min M ax U nit Collector-base breakdown voltage V (BR)CBO I C = -10 μ A, I E =0 -60 V Collector-emitter breakdown voltage V (BR)CEO I C = -10mA, I B =0 -60 V Emitter-base breakdown voltage V (BR)EBO I E =-10 μ A, I C =0 -5 V Collector cut-off current I CBO V CB =-50V, I E =0 -10 nA Collector cut-off current I CEX V CE =-30V,V EB(off) =-0.5V -50 nA Emitter cut-off current I EBO V EB =-3V, I C =0 -10 nA h FE(1) V CE =-10V, I C = -0.1mA 75 h FE(2) V CE =-10V, I C = -1mA 100 h FE(3) V CE =-10V, I C =-10mA 100 h FE(4) V CE =-10V, I C = -150mA 100 300 DC current gain h FE(5) V CE =-10V, I C =-500mA 50 V CE sat)1 I C =-150mA, I B =-15mA -0.4 V Collector-emitter saturation voltage V CE(sat)2 I C =-500mA, I B =- 50mA -1.6 V V BE(sat)1 I C =-150mA, I B =-15mA -1.3 V Base-emitter saturation voltage V BE(sat)2 I C =-500mA, I B = -50mA -2.6 V Transition frequency f T V CE =-20V, I C = -50mA, 100MHz

200 MHz

C ob V CB =-10V, I E = 0, 1MHz 8 pF Input Capacitance C ib V EB =-2V, I C = 0, 1MHz 30 pF Delay time t d 10 ns Rise time t r 40 ns Storage time t s 225 ns Fall time t f V CC =-30V,I C =-150mA, I =-15mA 60 n s *pulse test www.cj-elec.com 2 D,Mar,2016www.cj-elec.com

SOT-363 Suggested Pad Layout www.cj-elec.com 3 D,Mar,2016 Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.150 0.350 0.006 0.014 c 0.100 0.150 0.004 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.400 0.085 0.094 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP

www.cj-elec.com 4 D,Mar,2016