MMDT2222A

MMDT2222A JIANGSU | Alldatasheet

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT2222A FEATURE Complementary PNP Type available MMDT2907A MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage 75 V V CEO Collector-Emitter Voltage 40 V V EBO Emitter-Base Voltage 6 V I C Collector Current -Continuous 600 mA P C Collector Power Dissipation 200 mW T J Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ MARKING: K1P JC(T www.cj-elec.com 1 E,Mar,2016www.cj-elec.com DUAL TRANSISTOR (NPN+NPN) SOT-363

Parameter Symbol Test c onditions Min Max Unit Delay time t d 10 ns Rise time t r V CC =30V, I C =150mA, V BE(off) =0.5V,I =15mA 25 ns Storage time t S 225 ns Fall time t f V CC =30V, I C =150mA, I = -I = 15mA 60 n s ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) P a r a m e t e r Symbol Test conditions Min Max Unit Collector-base breakdown voltage V (BR)CBO I C = 10μA, I E =0 75 V Collector-emitter breakdown voltage V (BR)CEO I C = 10mA, I B =0 40 V Emitter-base breakdown voltage V (BR)EBO I E =10μA.I C =0 6 V Collector cut-off current I CBO V CB = 60V, I E =0 10 nA Collector cut-off current I CEX V CE = 60V,V EB(off) =3V 10 nA Emitter cut-off current I EBO V EB = 3 V, I C =0 10 nA h FE(1) V CE =10V, I C = 0.1mA 35 h FE(2) V CE =10V, I C = 1mA 50 h FE(3) V CE =10V, I C = 10mA 75 h FE(4) V CE =10V, I C = 150mA 100 300 h FE(5) V CE =10V, I C = 500mA 40 DC current gain h FE(6) V CE =1V, I C = 150mA 35 V CE(sat)1 I C =150mA, I B = 15mA 0.3 V Collector-emitter saturation voltage V CE(sat)2 I C =500mA, I B = 50mA 1 V V BE(sat)1 I C =150mA, I B =15mA 0.6 1.2 V Base-emitter saturation voltage V BE(sat)2 I C =500mA, I B = 50mA 2 V Transition frequency f T V CE =20V, I C = 20mA, f=100MHz

300 MHz

V CB =10V, I E =0,f=1MHz 8 pF Input Capacitance C ib V EB =0.5V,I C = 0,f=1MHz 25 pF Noise Figure NF V CE =10V, I C =100μA, f=1KHz,Rs=1KΩ 4 dB www.cj-elec.com 2 E,Mar,2016www.cj-elec.com

0.1 1 10 100 0.1 1 10 100 100 200 300 400 500 0.1 100 0 25 50 75 100 125 150 100 200 300 1 10 100 0.0 0.1 0.2 0.3 0.4 0.5 02 468 1 0 1 2 0.00 0.05 0.10 0.15 0.20 0.25 1 10 100 0.0 0.4 0.8 1.2 f=1MHz I E =0/ I C T a =25 V CB / V EB C ob / C ib — — C ob C ib CAPACITANCE C (pF) REVERSE VOLTAGE V (V) COMMON EMITTER V CE =10V 600 I C T a =25 T a =100 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) 100 V BE I C — — COMMON EMITTER V CE =10V 600 T a =100 T a =25 COLLECTOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (V) P c — — T a COLLECTOR POWER DISSIPATION Pc (mW) AMBIENT TEMPERATURE Ta ( ) h FE — — 600 β=10 T a =100 T a =25 I C V CEsat — — COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) COLLECTOR CURRENT I C (mA) Static Characteristic 1mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA I B =0.1mA COMMON EMITTER T a =25 COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE V CE (V) 600 β=10 I C V BEsat — — T a =100 T a =25 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) COLLECTOR CURRENT I C (mA) 500 I C f T — — COMMON EMITTER V CE =20V Ta=25 TRANSTION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) www.cj-elec.com 3 E,Mar,2016www.cj-elec.com Typical Characteristics

SOT-363 Suggested Pad Layout www.cj-elec.com 4 E,Mar,2016www.cj-elec.com Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.150 0.350 0.006 0.014 c 0.100 0.150 0.004 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.400 0.085 0.094 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP

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