MMDT2222A HOTTECH | Alldatasheet

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Page:P2-P1 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FE A TURES Complementary PNP Type available MMDT2907A MARKING :K 1P MAXIMUM RA TINGS (TA=25 unless otherwise noted) Parameter Symb ol V alue Unit Collector-Base V oltage V CBO 75 V Collector-EmitterV oltage V CEO 40 V Emitter-Base V oltage V EBO 6 V Collector Current-Continuous IC 600 mA Collector Pow er Dissipation IC 200 mW Junction Temperature TJ 150 StorageTemp erature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter S y m bol Test conditions M in M ax U nit Collector-base breakdow n volt age V C BO IC = 10 μ A, IE=0 75 V Collector-emitter breakdow n volt age V CEO IC = 10mA, IB =0 40 V Emitter-base breakdow n volt age V BO IE=10 μ A.IC =0 6 V Collector cut-off current ICBO V CB = 60V , IE=0 10 nA Collector cut-off current ICEX V CE = 60V ,V EB(O ff =3V 10 nA Emittercut-offcurrent IEBO V EB = 3 V , IC =0 10 nA DC current gain h FE(1) V CE =10V , IC = 0.1mA 35 h FE(2) V CE =10V , IC = 1mA 50 h FE(3) V CE =10V , IC = 10mA 75 h FE(4) V CE =10V , IC = 150mA 100 300 h FE(5) V CE =10V , IC = 500mA 40 h FE(6) V CE =1V ,IC = 150mA 35 Collector-emitter saturationvoltage V CE(sat)1 IC =150mA, IB = 15mA 0.3 V V CE(sat)2 IC =500mA, IB = 50mA 1 V Ba s e emitt e r sat u rati o n v o l t a g e V BE(sat)1 IC =150mA, IB =15mA 0.6 1.2 V V BE(sat)2 I C =500mA, I B = 50mA V Transition frequency fT V CE =20V , IC = 20mA, f=100MHz

300 MHz

p acitance C ob V CB =10V , I f=1MHz 8 p F Inp ut Ca p acitance C ib V EB =0.5V C = 0 =1MHz 25 pF Noise Figure NF V CE =10V , IC =100μA, f=1KHz,Rs=1KΩ 4 dB MM DT 2222A (NP N ) E B C C B E SOT -363

Page:P2-P2 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. MM DT 2222A Typical Characteristics