MMC4069 MICRO-ELECTRONICS | Alldatasheet
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_This file has been download from www.datasheetoatalog.com | m i "4 I Tele Vo ty METOaSaG’ FOYE) muc 4089 oo sete hetero HEX INVERTER GENERAL DESCRIPTION FEATURES The MMC 4069 is a monolithic tyes aca circuit @ Medium-speed operation processed in standard pigete CMOS technology. tru. tery = JO ns ltyp) at 10V The MMC 4069 consists of six CMOS inverter cir- @ Gulescent current specified to 20 V cuits. This device is intended for all general-purpose @ 5V, 10V, 15 V parametric ratings inverter applications where the medium-power TTL- drive and logic-level-conversion capabilities of cir- cuits such as MMC 4049 Hex Inverter/Buffer are not required. a ABSOLUTE MAXIMUM RATINGS i Voo* Supply voltage: G and H types -0.5 to 20 v E and F types -0.5 to 18 Vv V; Input voltage -O5to VpotO.5 Vv i DC input current {any one input) +10 mA Prot Total power dissipation (per package) 200 mW Dissipation per output transistor for T, = full package-temperature range 100 mW Ta Operating temperature: G and H types -55 to 125 °C E and F types -40 to 85 °c Totg Storage temperature . . -65 to 150 °c nv a * All voltage values are referred to Vgg pin voltage i RECOMMENDED OPERATING CONDITIONS Vop* Supply voltage: G and H types Sto 418 Vv E and F types 3 to 15 v v, Input voltage Oto Vop Vv Ts Operating temperature: G and H types -65 to 125 sc E and F types -40 to 85 °c a CONNECTION DIAGRAM SCHEMATIC DIAGRAM ath 40) po Yoo G=AQz ape BE ty L=F Su a-BOs mpe wsens pe 1-0 sto Vos? 6f}J=0 \\ss CC, 145
This file has been download from www.datasheetcatalog.com MMC 4069 a STATIC ELECTRICAL CHARACTERISTICS fover recommended operating conditions} TEST CONDITIONS VALUES in Quiescent GHjO/ 5S 5 025 001} 0.25 735 current types|0/10) 10 lohe} 001/| 05 15 | 0/15 15 4 001; 1 30} 0/20 20 5 00¢; 5 150 yA i EF {O/ 5 5 4 0.01; 1 75 types |0/10 10 2 001} 2 | 15 | 0/15 15 4 0.01) 4 30 Vou Qutput high o/ 5 <1] 5 1495 495 495 voltage 0/10 <7! 10 | 9.95 995 9.95 Vv 0/15 <1) 15 1495 1495 14.95 Var Output low 5 /0 <4 is) 005 605 905 voltage 10/0 4 10 005 ; 06 Ons! y 15/0 . 1S 065 lous oles) v Input high O5e45] <1 2) 4 4 ' 5 voltage 1/9 <1 10] 8 a | 4 ¥ 18/135) <1] 15 1125 ee) | 125 Vie input tow 45/05} <1 bay 14 y 1 voitage 9/1 <1 10 2 2 2 v 135/15] <1] 15 25 258 as lon Output GH|O/ 5; 25 5 |-2 16] 32 i drive types}O/ 5 46 5 |-0.64 a5sy 4 038 current 0/10 35 10 1-16 1.3) -26 ag Q/15} 135 15 |-42 -34) 68 24 mA EF |O/ 5 25 te) 4.53] 1.36°3.2 ou types]O/ 5 46 5 |-0.52) 044 1 0.36 0/10 $5 10 13 11426 ag 0/15} 135 15 |-36 30 }-68 24 low Output G.HIO/ 5 04 5S | 064 0.51} 1 036 sink types} 0/10 Os 10 | 16 19) 26 03g current 0/15 15 151 42 34] 68 ea samme ee ell NADAS SOP mA E.F 10/5 04 5 | 0582; 044} 1 0.36) types}0/10 os 10] 13 11 | 26 og 0/15; 15 15 | 36 | 30 | 68 24 le by Input BH lone 18 101] 104 401 41 leakage types Any | F current ~ een en Ce eer Pn re HA it Pe ae nyu 15 103} |10%} 908 fa types | i input capacitance Any input) 5 75 | nF * Trow ® ~ 58°C for G, H devices: 40°C for E. F devices —_ _ * Tra 7 + 125°C for G, H devices”: 85°C for E. F devices The Noise Margin for both "1" and “O” level is
4 Von with Van SV
2V min with Von © 10 V 25 V mn. with Vo 7 15 V i ee 4146
This file has been download from www.datasheetcatalog.com MMC 4069 ee oe aay DYNAMIC ELECTRICAL CHARACTE RisTics: (Ty = 25°C, Cy = 50 pF, R, = 2O0kohm, typical temperature coefficient far all Voq= 0.39%/°C values. all input ¢ and fall times = 20 ns). TesTcoNDmons| VALUES | nat PARAMETER SC OT 3 110 tp.y Propagation delay time x As ns Cpe. 18 50 iti i 100 200 tru Transition timie Aa 50 700 na THE 15 40 80
APPLICATIONS
Typical crystal oscillator circuit Typical RC oscillator circuit High-input impedance amplities
116 MMC 4069 1B MMC 4069 YOMMC 6069
o+-d> . “Tey in Rs Rfsf0M G Input pulse shaping circuit (Schutt trigger) IN = > OUT UPPER SWITCHING POINT Ry +R. vi Vp = tt Rs, Yoo Re 2 LOWER SWITCHING POINT AEA, V Vy = otis, Yoo Ry 2 Fy > Rg, er 147