MMBT2222 HTSEMI | Alldatasheet
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Genernal Purpose Amplifier MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 250 mW RΘJA Thermal Resistance From Junction To Ambient 500 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10µA, IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 10 nA Collector cut-off current ICEX VCE=30V, VBE(off)=3V 10 nA Emitter cut-off current IEBO VEB=3V, IC=0 0.1 µA hFE(1)* VCE=10V, IC=150mA 100 300 hFE(2)* VCE=10V, IC=0.1mA 40 DC current gain hFE(3)* VCE=10V, IC=500mA 42 Collector-emitter saturation voltage VCE(sat)1* IC=500mA, IB=50mA 1 V Collector-emitter saturation voltage VCE(sat)2* IC=150mA, IB=15mA 0.3 V Base-emitter saturation voltage VBE(sat)* IC=500mA, IB=50mA 1.2 V Transition frequency fT VCE=20V,IC=20mA, f=100MHz 300 MHz Delay time td 10 ns Rise time tr VCC=30V, VBE(off)=-0.5V IC=150mA, IB1=15mA 25 ns Storage time ts 225 ns Fall time tf VCC=30V, IC=150mA, IB1= IB2=15mA 60 ns *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. CLASSIFICATION OF hFE(1) RANK L H RANGE 100–200 200–300 MARKING M1B SOT–23 1. BASE 2. EMITTER 3. COLLECTOR MMBT2222 Date:2011/05 www.htsemi.comsemiconductor JinYu