MMBT2222 FOSHAN | Alldatasheet

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R e v . F A p r . - 2 0 1 7 DATA SHEET http://www.fsbrec.com 1 / 6 SOT-23 塑封封装 NPN半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 集电极电流可达到 600mA。 Collector currents up to 600mA. 用于普通放大。 General purpose amplifier. PIN 1：Base PIN 2 ：Emitter PIN 3 ：Collector 放大及印章代码 / h FE Classifications & Marking hFE Range 100～300 Marking 1BH 描述 / D e s c r i p t i o n s 特征 / Features 用途 / Applications 内部等效电路 / Equivalent Circuit 引脚排列 / P i n n i n g

R e v . F A p r . - 2 0 1 7 DATA SHEET http://www.fsbrec.com 2 / 6 参数 Parameter 符号 Symbol 数值 Rating 单位 Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage V EBO 5.0 V Collector Current I C 600 mA Collector Power Dissipation P C 350 mW Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55～150 ℃ 参数 Parameter 符号 Symbol 测试条件 Test Conditions 最小值 Min 典型值 Typ 最大值 Max 单位 Unit Collector to Base Breakdown Voltage VCBO I C=10μA IE=0 60 V Collector to Emitter Breakdown Voltage VCEO I C=10mA IB=0 30 V Emitter to Base Breakdown Voltage VEBO I E=10μA IC=0 5.0 V Collector Cut-Off Current I CBO VCB=50V IE=0 0.01 μA Base Cut-Off Current I EBO VEB=5.0V IC=0 0.1 μA DC Current Gain hFE(1) V CE=10V IC=150mA 100 300 hFE(2) V CE=10V IC=0.1mA 35 hFE(3) V CE=10V IC=1.0mA 50 hFE(4) V CE=10V IC=10mA 75 hFE(5) V CE=10V IC=500mA 30 Collector-Emitter Saturation Voltage VCE(sat) (1) IC=150mA IB=15mA 0.4 V VCE(sat) (2) IC=500mA IB=50mA 1.6 V Base-Emitter Saturation Voltage VBE(sat) (1) IC=150mA IB=15 mA 1.3 V VBE(sat) (2) IC=500mA IB=50mA 2.6 V Output Capacitance Cob VCB=10V f=1.0MHz 8.0 pF Transition Frequency f T IC=20mA V CE=20V f=100MHz 250 MHz Turn-On Time ton VCC=30V VBE=0.5V IC=150mA IB1=15mA 35 ns Turn-Off Time t off VCC=30V IC=150mA IB1=IB2=15mA 285 ns 极限参数 / Absolute Maximum Ratings(Ta=25 ℃) 电性能参数 / Electrical Characteristics(Ta=25 ℃)

R e v . F A p r . - 2 0 1 7 DATA SHEET http://www.fsbrec.com 3 / 6 电参数曲线图 / Electrical Characteristic Curve

R e v . F A p r . - 2 0 1 7 DATA SHEET http://www.fsbrec.com 4 / 6 外形尺寸图 / Package Dimensions

R e v . F A p r . - 2 0 1 7 DATA SHEET http://www.fsbrec.com 5 / 6 印章说明 / Marking Instructions 说明： 1B： 为型号代码 H：  为公司代码 Note: 1B： Product Type Code H： Company Code 1BH

R e v . F A p r . - 2 0 1 7 DATA SHEET http://www.fsbrec.com 6 / 6 回流焊温度曲线图(无铅) / Temperature Profile for IR Reflow Soldering(Pb-Free) 说明： N o t e : 1、预热温度 25～150℃，时间 60～90sec; 1.Preheating:25~150 ℃, Time:60~90sec. 3、焊接制程冷却速度为 2～10℃/sec. 3. Cooling Speed: 2~10℃/sec. 耐焊接热试验条件 / Resistance to Soldering Heat Test Conditions 温度：260±5℃ 时间：10±1 sec. Temp.:260±5 ℃ Time:10±1 sec 包装规格 / Packaging SPEC. 卷盘包装 / R E E L Package Type 封装形式 Units 包装数量 Dimension 包装尺寸 (unit ：mm Units/Reel 只/卷盘 Reels/Inner Box 卷盘/盒 Units/Inner Box 只/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Reel Inner Box 盒 Outer Box 箱 SOT-23 3,000 10 30,000 6 180000 7〞×8 180×120×180 390×385×205 使用说明 / N o t i c e s