MMBD1701 FAIRCHILD | Alldatasheet

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High Conductance Low Leakage Diode Sourced from Process 1T. MMBD1701/A / 1703/A / 1704/A / 1705/A MARKING MMBD1701 85 MMBD1701A 85A MMBD1703 87 MMBD1703A 87A MMBD1704 88 MMBD1704A 88A MMBD1705 89 MMBD1705A 89A Absolute Maximum Ratings* TA = 25°C unless otherwise noted CONNECTION DIAGRAMS 1 2 NC 1703 1704 1701 1705 Symbol Parameter Value Units W IV Working Inverse Voltage 20 V IO Average Rectified Current 50 mA IF DC Forward Current 150 mA if Recurrent Peak Forward Current 150 mA if(surge) Peak Forward Surge Current Pulse width = 1.0 second 250 mA Tstg Storage Temperature Range -55 to +150 °C TJ Operating Junction Temperature 150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units MMBD1701/A /1703/A-1705/A* PD Total Device Dissipation Derate above 25°C 350 2.8 mW mW/ °C R θJA Thermal Resistance, Junction to Ambient 357 °C/W SOT-23 Discrete POWER & Signal Technologies MMBD1701/A / 1703/A / 1704/A / 1705/A  1997 Fairchild Semiconductor Corporation MMBD1700 Rev. B

Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test C onditions Min Max Units BV Breakdown Voltage IR = 5.0 µA 30 V IR Reverse Current V R = 20 V 50 nA VF Forward Voltage IF = 10 µA IF = 100 µA IF = 1.0 mA IF = 10 mA IF = 20 mA IF = 50 mA 420 520 640 760 810 0.89 500 610 740 880 950 1.1 mV mV mV mV mV V C O Diode Capacitance V R = 0, f = 1.0 MHz 1.0 pF TRR Reverse Recovery Time MMBD1701-1705 MMBD1701A-1705A IF = IR = 10 mA IRR = 1.0 mA, R L = 100Ω IF = IR = 10 mA IRR = 1.0 mA, R L = 100Ω 700 1.0 pS nS Typical Characteristics REVERSE VOLTAGE vs REVERSE CURRENT BV - 1.0 to 100 uA 1 2 3 5 10 20 30 50 100 I - REVERSE CURRENT (uA) V - REVERSE VOLTAGE (V) R R Ta= 25°C REVERSE CURRENT vs REVERSE VOLTAGE IR - 1 to 22 V GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature 1 2 3 5 10 20 V - REVERSE VOLTAGE (V) I - REVERSE CURRENT (nA) R R Ta= 25°C FORWARD VOLTAGE vs FORWARD CURRENT VF - 1.0 to 100 uA 1 2 3 5 10 20 30 50 100 300 350 400 450 500 550 600 I - FORWARD CURRENT (uA) V - FORWARD VOLTAGE (mV) F F Ta= 25°C FORWARD VOLTAGE vs FORWARD CURRENT VF - 0.1 to 10 mA 0.1 0.2 0.3 0.5 1 2 3 5 10 550 600 650 700 750 800 850 I - FORWARD CURRENT (mA) V - FORWARD VOLTAGE (mV) F F Ta= 25°C IR High Conductance Low Leakage Diode (continued) MMBD1701/A / 1703/A / 1704/A / 1705/A

Typical Characteristics (continued) FORWARD VOLTAGE vs FORWARD CURRENT VF - 10 - 200 mA 10 20 30 50 100 200 0.8 1.2 1.4 1.6 I - FORWARD CURRENT (mA) V - FORWARD VOLTAGE (V) F F Ta= 25°C CAPACITANCE vs REVERSE CURRENT VR - 0 to 15 V 02468 1 0 1 2 1 4 0.5 0.6 0.7 0.8 0.9 REVERSE VOLTAGE (V) CAPACITANCE (pF) Ta= 25°C Power Dissipation, Average Rectified Current (Io), Forward Current (I ) & Ambient Temperature (T ) 0 2 55 07 5 1 0 0 1 2 5 1 5 0 1 7 5 100 150 200 250 T - AMBIENT TEMPERATURE ( C) P - POWER DISSIPATION (mW) P - POWER DISSIPATION - mW I - CONTINOUS FORWARD CURRENT - mA o D R A F Io - AVERAGE RECTIFIED CURRENT - mA A D Power Derating Curve 0 25 50 75 100 125 150 175 200 100 150 200 250 300 350 Io - AVERAGE TEMPERATURE P - POWER DISSIPATION (mW)D SOT-23 DO-7 MMBD1701/A / 1703/A / 1704/A / 1705/A High Conductance Low Leakage Diode (continued)