MMBA5247BW

MMBZ5221BW JIANGSU | Alldatasheet

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diode MMBZ5221BW-MMBZ5259BW ZENER DIODE FEATURES： Planar Die Construction 200mW Power Dissipation on FR-4 PCB General purpose, Medium Current Ideally Suited for Automated Assembly Marking: see table on page2 The first code Maximum Ratings(Ta= 25℃ unless otherwise specified) Characteristic Symbol Value Unit Forward Voltage @ I F = 10mA V F 0.9 V Power Dissipation PD 200 mW Thermal Resistance, Junction to Ambient Air R θ JA 625 ℃/W SOT- 323 www.cj-elec.com 1 Junction Temperature T j 150 ℃ Storage Temperature Range Tstg -55 ~ +150 ℃ C,Apr,2015

Zener Voltage Range (Note 1) Test Current Maximum Zener Impedance (Note 2) Maximum Reverse Leakage Current (Note 1) Type Number Marking Code V Z @ I ZT I ZT Z ZT I ZT Z ZK @ I ZK 0.25mA I R R Nom (V) Min (V) Max (V) mA Ω µA V MMBZ5221BW KC1 2.4 2.28 2.52 20 30 1200 100 1.0 MMBZ5222BW KC2 2.5 2.38 2.63 20 30 1250 100 1.0 MMBZ5223BW KC3 2.7 2.57 2.84 20 30 1300 75 1.0 MMBZ5225BW KC5 3.0 2.85 3.15 20 30 1600 50 1.0 MMBZ5226BW KG1 3.3 3.14 3.47 20 28 1600 25 1.0 MMBZ5227BW KG2 3.6 3.42 3.78 20 24 1700 15 1.0 MMBZ5228BW KG3 3.9 3.71 4.10 20 23 1900 10 1.0 MMBZ5240BW KF5 10 9.50 10.50 20 17 600 3.0 8.0 MMBZ5241BW KH1 11 10.45 11.55 20 22 600 2.0 8.4 MMBZ5242BW KH2 12 11.40 12.60 20 30 600 1.0 9.1 MMBZ5244BW KH4 14 13.30 14.70 9.0 15 600 0.1 10 MMBZ5245BW KH5 15 14.25 15.75 8.5 16 600 0.1 11 MMBZ5246BW KJ1 16 15.20 16.80 7.8 17 600 0.1 12 MMBA5247BW KJ2 17 16.15 17.85 7.4 19 600 0.1 13 MMBZ5248BW KJ3 18 17.10 18.90 7.0 21 600 0.1 14 MMBZ5249BW KJ4 19 18.05 19.95 6.6 23 600 0.1 14 MMBZ5250BW KJ5 20 19.00 21.00 6.2 25 600 0.1 15 MMBZ5251BW KK1 22 20.90 23.10 5.6 29 600 0.1 17 MMBZ5252BW KK2 24 22.80 25.20 5.2 33 600 0.1 18 MMBZ5253BW KK3 25 23.75 26.25 5.0 35 600 0.1 19 MMBZ5254BW KK4 27 25.65 28.35 5.0 41 600 0.1 21 MMBZ5255BW KK5 28 26.60 29.40 4.5 44 600 0.1 21 MMBZ5256BW KM1 30 28.50 31.50 4.2 49 600 0.1 23 MMBZ5257BW KM2 33 31.35 34.65 3.8 58 700 0.1 25 MMBZ5258BW KM3 36 34.20 37.80 3.4 70 700 0.1 27 MMBZ5259BW KM4 39 37.05 40.95 3.2 80 800 0.1 30 Notes: 1. Short duration test pulse used to minimize self-heating effect. 2. f = 1KHz.

ELECTRICAL CHARACTERISTICS

T a=25℃ unless otherwise specified www.cj-elec.com 2 C,Apr,2015

www.cj-elec.com 3 Typical Characteristics 0 4 8 12 16 20 24 28 32 36 40 44 0 25 50 75 100 125 150 100 150 200 250 11 0 100 100 1000 0 5 10 15 20 25 30 35 40 45 1E-4 1E-3 0.01 0.1 100 123456789 1 0 1 1 100 11 0 100 100 1000 10 15 20 25 30 35 40 45 100 VZ @ IZT TYPI CAL Ta VALUES FOR MMBZ52XXBW SERIES Temp erature Coefficients θVZ, TEMPERAT URE COEFFICIENT (mV/ )℃ V Z , NOMINAL ZENER VOLTAGE (V) Pow er Derating Curve POWER DISSIPATIO N PD (mW) AMBIENT T EMPERATURE Ta ( )℃ IZT Effe ct of Zener Voltage on Zener Impedance IZ=0.25mA Ta=25℃ IZ(AC)=0.1IZ(DC) f=1kHz VZ, NOMINAL ZENER VOLTAGE (V) ZZT, DYNAMIC IMPEDANCE(Ω) Pulsed Typ ical Leakage Current IR, LEAKAGE CURRENT (uA) VZ, NOMINAL ZENER VOLTAGE (V) Ta=25℃ Ta=100℃ 3000 Ta =25℃ Pulsed 0.5 8.7 6.24.7 6.0 5.65.1 3.0 4.3 6.8 7.5 8.2 9.1 10 PD =200mW 0.5 Zen er Characteristics(VZ Up to 10 V) IZ, ZENER CURRENT (mA) VZ, ZENER VO LTAGE (V) Ta=25℃ f=1MHz BIAS AT 50% OF VZ NOM Typ ical Capacitance VZ, NOMINAL ZENER VOLTAGE (V) C, CAPACITANCE (p 1V BIAS 0V BIAS 302514 Zen er Characteristics(11 V to 39 V) PD =200mW Ta =25℃ Pulsed IZ, ZENER CURRENT (mA) VZ, ZENER VO LTAGE (V) 1611 12 2413 15 18 28 33 393620 22 27 C,Apr,2015 Notes：Our company currently provide 3.0V-39V products only

A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 0.096 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP SOT-323 Suggested Pad Layout www.cj-elec.com 4 C,Apr,2015

www.cj-elec.com 5 C,Apr,2015