MIB51T MICRO-ELECTRONICS | Alldatasheet
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2 MIBS1T
7) EMITTING DIODE nnn DESCRIPTION (o.188) | MIBSIT is GaAlAs infrared . \\ emitting diode molded in T-1 (o3) _ 10 | 3/4 standard Smm diameter te clear transparent lens. s1* 023 0.75(0.03) 3 . max. (0.99) (0.02) 05 mr (0.02) athode | 1.5(0.06) | t... © Aildimension in mm(inch) | 2.54(0.1) ®@ No Scale ABSOLUTE MAXIMUM RATINGS © Tol: +/-0.3mm : Forward Current (Continuous) 100mA Pulse Forward Current 1A* Reverse Voltage (Continuous) 6V Power Dissipation 160mW - Operating Temperature Range -25 to +85°C Lead Soldering Temperature (1/16" from body) 260°C for 5 sec. * Pulse Width = 10us, Duty Ratio = 0.01. ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL | MIN TYP MAX | UNIT | CONDITIONS Radiant Power Output Po 4.0 mW IF=20mA Forward Voltage VE 1.6 Vv IF=20mA Reverse Current IR 100 BA VR=5V Half Intensity Beam Angle @HI 70 degree IF=20mA Peak Wavelength Ap 940 nm IF=20mA Spectrum Line Half Width An 45 nm IF=20mA MICRO ELECTRONICS LTD. f@} 38, Hung To Road, Microtron Building, Kwun Tong, Kowloon, Hong Kong.
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