MIB31T MICRO-ELECTRONICS | Alldatasheet
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9° INFRARED a EMITTING DIODE 93.15 DESCRIPTION 770.124) MIB31T is GaAlAs infrared 53 a emitting diode molded in T-1 (021), PY oh. . a (an } 940 standard 3mm diameter clear 1 coat aay eS ats transparent lens. aan (| | See 5 (1.09) os | L _eathed oy ° | 1 L_1254(0.1) @ All Dimension in mm (inch) @ NO Scale e Tol: +/- 0.3mm ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Forward Current (Continuous) 100mA - Pulse Forward Current 1A* Reverse Voltage (Continuous) 5V Power Dissipation 200mW Operating Temperature Range -25 to +85°C Lead Soldering Temperature (1/16" from body) 260°C for 5 sec. * Pulse Width = 10s, Duty Ratio = 0.01. ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL | _ MIN TYP MAX CONDITIONS Radiant Power Output Po 1.6 2.5 mW Tr=20mA Forward Voltage VE 1.2 1.6 Vv IF=20mA Reverse Current IR 100 pA VRr=5V Peak Wavelength dp 940 om TF=20mA Spectrum Line Half Width Ar 45 nm IF=20mA Viewing Angle 2461/2 40 dagree Tr=20mA : MICRO ELECTRONICS LTD. 38, Hung To Road, Microtron Bulding, Kwun Tong, Kowloon, Hong Kong. eer]