MI51T MICRO-ELECTRONICS | Alldatasheet
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2 MISIT
_ DIODE ntti DESCRIPTION ofsecare MISIT is GaAlAs. infrared (eink poe emitting diode molded in T-1 87030 Locos Ly 3/4 standard Smm_ diameter a + LU 1.3¢0.08> clear transparent lens. 003) oscoo4y LL 1.00.04) dis 0.620.024) 19007 és : al dimension in mm(inch) © Tol, :+/-0.3mm CATHODE THOOE) “COLLECTOR ABSOLUTE MAXIMUM RATINGS aseontt | _— Forward Current (Continuous) 100mA Pulse Forward Current 1A* Reverse Voltage (Continuous) 5V Power Dissipation 75mW — Operating Temperature Range -25 to +85°C Lead Soldering Temperature (1/16" from body) 260°C for 5 sec. * Pulse Width = 10us, Duty Ratio = 0.01. ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL MIN TYP MAX | UNIT CONDITIONS Radiant Power Output Po 1.0 mW 1F=20mA Forward Voltage VE 1.2 1.6 Vv IF=20mA Reverse Current IR 100 BA VR=5V Half Intensity Beam Angle @HI 50 degree IF=20mA Peak Wavelength Ap 940 nm IF=20mA Spectrum Line Half Width Ar 45 nm IF=20mA —~ ey Yq MICRO ELECTRONICS LTD. % 38, Hung To Road, Microtron Bulding, Kwun Tong, Kowloon, Hong Kong. LD al coe Tong P.O. Box 6477 Hong Kong, Fax No. 2341 0321 Telex:43510 Micro Hx, Tel: 2343 0181-5
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