MI38T MICRO-ELECTRONICS | Alldatasheet
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a
2 MIB38T
_ a (MIB38T-K) wy INFRARED a EMITTING DIODE DESCRIPTION : MI38T & MIB38T are GaAlAs infrared emitting diode molded flangeless 3mm diameter clear plastic package, with the lensing effect of the package, and MIB38T with cup type leadframe, MI38T & MIB38T are mechanically and spectrally matched to the MEL82 series photo transistor. ABSOLUTE MAXIMUM RATINGS Forward Current (Continuous) 100mA Pulse Forward Current 1A* Reverse Voltage (Continuous) 5V Power Dissipation 160mW Operating Temperature Range -25 to +85°C — Lead Soldering Temperature (1/16" from body) 260°C for 5 sec. * Pulse Width = 10 zs, Duty Ratio = 0.01. ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) PARAMETER. SYMBOL MI38T MIB38T UNIT CONDITIONS Radiant Power Output TYP Po 2.0 2.5 mW IF=20mA Forward Voltage MAX VF 1.6 16 Vv IF=20mA Reverse Current MAX IR 100 100 UA VR=5V Half Intensity Beam Angle TYP. 6HI 30 20 degree TF=20mA Peak Wavelength TYP Ap 940 940 nm IF=20mA Spectrum Line Half Width TYP AX 45 45 nm IF=20mA. Page 1 of 3 MICRO ELECTRONICS LTD. 38, Hung To Road, Microtron Bulding, Kwun Tong, Kowloon, Hong Kong.
~ 92.97 a , oN 018) ( ; » 7 #3.0 t j : —— (0.0118) 075 | | oy! max. 5 (0.64)
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| , 1.5(0.06) | “TO 4 @ All dimension in mm(inch) L+-2.54(0.1) o toeesmm MIB38T (MIB38T-K) -~ 92.97 7 (0.117) 44 ( 16) | ) s—=7ho Lit — (0.0118) os (| | “ont (0.03). 274 max. (7.08) os |, Km | | 45(0.06) t.. ®@ Alldimension in mm(inch) | @ No Scale _ Page 2 of 3
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