MI32T MICRO-ELECTRONICS | Alldatasheet
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“ EMITTING ™ DIODE ee 92.94 DESCRIPTION (one) 5.32 MI32T is GaAlAs infrared 21), emiitting diode molded in a= es at oe 3mm diameter clear $740.03) | Os transparent lens. max. x (0.02) (0.02) © All dimension in mm(inch) ABSOLUTE MAXIMUM RATINGS 8 atom Forward Current (Continuous) OO 100mA Pulse Forward Current 1A* Reverse Voltage (Continuous) 6V Power Dissipation 160mW — Operating Temperature Range -25 to +85°C Lead Soldering Temperature (1/16" from body) 260°C for 5 sec. * Pulse Width = 10us, Duty Ratio = 0.01. ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL | MIN TYP MAX | UNIT CONDITIONS Radiant Power Output Po 0.5 mW IF=20mA Forward Voltage VE 1.6 Vv IF=20mA Reverse Current IR 100 pA VR=5V Half Intensity Beam Angle OHI 35 degree IF=20mA Peak Wavelength Ap 940 nm IF=20mA Spectrum Line Half Width AA 45 nm IF=20mA - g MICRO ELECTRONICS LTD. - (d, 38, Hung To Read, Microtron Bulding, Kwun Tong, Kowloon, Hong Kong.
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