MI31T MICRO-ELECTRONICS | Alldatasheet
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3 MI31TA
“ EMITTING DIODE DESCRIPTION ° MBIT & MIB3ITA are (0.138) GaAlAs infrared emitting ab diode molded in 3.2mm (021) : L diameter clear transparent Cal (5 | hor lens. 0.75(0.03) 0.5 max. x (0.027 © Aildimension jn mm(inch) os shod No Seal . je Tol 0.3mm _ (0.02) (Kam | itt 7.10.67) ABSOLUTE MAXIMUM RATINGS 2.54(0.1) Forward Current (Continuous) 80mA Pulse Forward Current 1A* Reverse Voltage (Continuous) 5V Power Dissipation 150mW Operating Temperature Range -25 to +85°C Lead Soldering Temperature (1/16" from body) 260°C for 5 sec. * Pulse Width = 10s, Duty Ratio = 0.01. ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) PARAMETER MBIT | MBBITA CONDITIONS Radiant Power Output MIN Po 15 12 mW IF=20mA TYP 1.7 15 mW IF=20mA Forward Voltage TYP. VE 12 13 Vv IF=20mA. MAX 1.6 18 Vv IF=20mA Reverse Current MAX IR 100 100 pA VR=5V Half Intensity Beam Angle TYP OHI 40 40 degree TF=20mA Peak Wavelength TYP dp 940 880 nm IF=20mA Spectrum Line Half Width = TYP AR 45 70 nm IF=20mA — MICRO ELECTRONICS LTD. 38, Hung To Road, Microtron Bulding, Kwun Tong, Kowloon, Hong Kong. ‘ Kwun Tong P.O. Box 69477 Hong Kong, Fax No. 2341 0321 Telex:43510 Micro Hx. Tel: 2343 0181-5 RES,
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