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Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ Compact IGBT Series Module

600 Amperes/1200 Volts

Description: Powerex Dual IGBTMOD™ Compact IGBT Series Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half- bridge conﬁguration, with each transistor having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simpliﬁed system assembly and thermal management. Features: £ Over-Current and Over-Temperature Protection £ Low V CE(sat) £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ UPS £ Welding Power Supplies £ Laser Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. MG600Q2YS60A is a 1200V (VCES), 600 Ampere Dual IGBTMOD™ Compact IGBT Series Module. Type Current Rating V CES Amperes Volts (x 10) MG 600 120 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters X 0.21 Dia. 5.5 Dia. Y M8 Metric M8 TH1 TH2 FO1 FO2 C2E1 E2 C1 V V V L V V L FO1 TH1 TH2 FO2 E1/C2 A D H F F WEB G U G S Q R PT J K M DETAIL "A" DETAIL "A" X (4 PLACES) Y (3 PLACES) #110 TAB (8 PLACES) N C

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG600Q2YS60A Dual IGBTMOD™ Compact IGBT Series Module Absolute Maximum Ratings, Tj = 25°C unless otherwise speciﬁed Characteristics Symbol MG600Q2YS60A Units Collector-Emitter Voltage VCES 1200 Volts Gate-Emitter Voltage VGES ±20 Volts Collector Current (DC) IC 600 Amperes Forward Current (DC) IF 600 Amperes Collector Dissipation (TC = 25°C) PC 4300 Watts Power Device Junction Temperature Tj -20 to 150 °C Storage Temperature Tstg -40 to 125 °C Mounting Torque, M5 Mounting Screws — 27 in-lb Mounting Torque, M8 Main Terminal Screws — 88 in-lb Module Weight (Typical) — 680 Grams Isolation Voltage, AC 1 minute, 60Hz Sinusoidal VISO 2500 Volts Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise speciﬁed Characteristics Symbol Test Conditions Min. Typ. Max. Units Gate Leakage Current IGES VGE = ±20V, VCE = 0V — — ±10 µA Collector Cutoff Current ICES VCE = 1200V, VGE = 0V — — 1.0 mA Gate-Emitter Cutoff Voltage VGE(off) IC = 600mA,VCE = 5V 6.0 6.7 8.0 Volts Collector-Emitter Saturation Voltage V CE(sat) V GE = 15V, IC = 600A, Tj = 25°C — 2.7 3.1 Volts VGE = 15V, IC = 600A, Tj = 125°C — 3.2 3.5 Volts Input Capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz — 41000 — pF Gate-Emitter Voltage VGE 13.0 15.0 17.0 Volts Gate Resistance RG 7.5 — 15.0 Ω Inductive Load td(on) — 0.3 — µs Switching tr — 0.2 — µs Times ton VCC = 600V, IC = 600A, — 0.5 — µs td(off) VGE = ±15V, RG = 7.5Ω — 1.3 — µs tf — 0.1 0.3 µs toff — 1.4 — µs Forward Voltage VF IF = 600A, VGE = 0V, Tj = 25°C — 2.2 3.2 Volts IF = 600A, VGE = 0V, Tj = 125°C — 2.0 — Volts Reverse Recovery Time trr I F = 600A, VGE = -15V, di/dt = 2000A/µs — 0.3 0.5 µs Junction to Case Thermal Resistance R th(j-c)Q IGBT (Per 1/2 Module) — — 0.029 °C/Watt Rth(j-c)D FWDi (Per 1/2 Module) — — 0.056 °C/Watt RTC Operating Current Irtc Tj = 25°C 1200 — — Amperes

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG600Q2YS60A Dual IGBTMOD™ Compact IGBT Series Module GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 0 6 12 18 24 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 300 600 900 1200 300 600 900 1200 0 106 82 4 COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS) Tj = 25°C Tj = 25°C FORWARD CURRENT, IF, (AMPERES) FREE-WHEEL CHARACTERISTICS (TYPICAL) 0 52 3 41 FORWARD VOLTAGE, VF, (VOLTS) IC = 1200A IC = 600A IC = 300A IC = 1200A IC = 600A IC = 300A IC = 1200A IC = 600A IC = 300A GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 0 6 12 18 24 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Tj = 125°C GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 0 6 12 18 24 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Tj = -40°C COLLECTOR CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 300 600 900 1200 0 106 82 4 COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS) Tj = 125°C VGE = 20V 15V 12V 10V VGE = 20V 12V 15V 10V VGE = 0V Tj = 25°C Tj = 125°C Tj = -40°C 104 103 102 0 600400200 COLLECTOR CURRENT, IC, (AMPERES) 1050 2015 GATE-EMITTER VOLTAGE, VGE, (VOLTS) TRANSFER CHARACTERISTICS (TYPICAL) 300 600 900 1200 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME, toff, (µs) TURN-OFF TIME VS. COLLECTOR CURRENT (TYPICAL) VCC = 600V VGE = ±15V RG = 7.5Ω Tj = 25°C Tj = 125°C 104 103 102 0 600400200 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME, ton, (µs) TURN-ON TIME VS. COLLECTOR CURRENT (TYPICAL) VCC = 600V VGE = ±15V RG = 7.5Ω Tj = 25°C Tj = 125°C VCE = 5V Tj = 25°C Tj = 125°C Tj = -40°C

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG600Q2YS60A Dual IGBTMOD™ Compact IGBT Series Module COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME, tf, (µs) FALL TIME VS. COLLECTOR CURRENT (TYPICAL) 103 102 101 0 600400200 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME, tr, (µs) RISE TIME VS. COLLECTOR CURRENT (TYPICAL) VCC = 600V VGE = ±15V RG = 7.5Ω Tj = 25°C Tj = 125°C 104 103 102 0 600400200 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME, td(off), (µs) TURN-OFF DELAY TIME VS. COLLECTOR CURRENT (TYPICAL) VCC = 600V VGE = ±15V RG = 7.5Ω Tj = 25°C Tj = 125°C 104 103 102 0 600400200 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME, td(on), (µs) TURN-ON DELAY TIME VS. COLLECTOR CURRENT (TYPICAL) VCC = 600V VGE = ±15V RG = 7.5Ω Tj = 25°C Tj = 125°C 103 102 101 0 600400200 VCC = 600V VGE = ±15V RG = 7.5Ω Tj = 25°C Tj = 125°C 104 103 102 5 2010 15 5 2010 15 GATE RESISTANCE, RG, (Ω) SWITCHING TIME, toff, (µs) TURN-OFF TIME VS. GATE RESISTANCE (TYPICAL) VCC = 600V VGE = ±15V IC = 600A Tj = 25°C Tj = 125°C 104 103 102 GATE RESISTANCE, RG, (Ω) SWITCHING TIME, ton, (µs) TURN-ON TIME VS. GATE RESISTANCE (TYPICAL) VCC = 600V VGE = ±15V IC = 600A Tj = 25°C Tj = 125°C 104 103 102 SWITCHING TIME, td(off), (µs) TURN-OFF DELAY TIME VS. GATE RESISTANCE (TYPICAL) VCC = 600V VGE = ±15V IC = 600A Tj = 25°C Tj = 125°C 104 103 102 SWITCHING TIME, td(on), (µs) TURN-ON DELAY TIME VS. GATE RESISTANCE (TYPICAL) VCC = 600V VGE = ±15V IC = 600A Tj = 25°C Tj = 125°C 104 103 102 SWITCHING TIME, tf, (µs) FALL TIME VS. GATE RESISTANCE (TYPICAL) VCC = 600V VGE = ±15V IC = 600A Tj = 25°C Tj = 125°C 5 2010 15 5 2010 15 GATE RESISTANCE, RG, (Ω) GATE RESISTANCE, RG, (Ω) 5 2010 15 GATE RESISTANCE, RG, (Ω)

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG600Q2YS60A Dual IGBTMOD™ Compact IGBT Series Module COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS, Eoff, (mJ/PULSE) SWITCHING LOSS (OFF) VS. COLLECTOR CURRENT (TYPICAL) VCC = 600V VGE = ±15V RG = 7.5Ω Tj = 25°C Tj = 125°C 101 103 102 SWITCHING LOSS, Eoff, (mJ/PULSE) SWITCHING LOSS (OFF) VS. GATE RESISTANCE (TYPICAL) GATE RESISTANCE, RG, (Ω) VCC = 600V VGE = ±15V IC = 600A Tj = 25°C Tj = 125°C 103 102 101 0 600400200 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS, Eon, (mJ/PULSE) SWITCHING LOSS (ON) VS. COLLECTOR CURRENT (TYPICAL) VCC = 600V VGE = ±15V RG = 7.5Ω Tj = 25°C Tj = 125°C 101 103 102 SWITCHING LOSS, Eon, (mJ/PULSE) SWITCHING LOSS (ON) VS. GATE RESISTANCE (TYPICAL) GATE RESISTANCE, RG, (Ω) VCC = 600V VGE = ±15V IC = 600A Tj = 25°C Tj = 125°C 103 102 101 0 600400200 FORWARD CURRENT, IF, (AMPERES) REVERSE RECOVERY CURRENT, Irr, (AMPERES) REVERSE RECOVERY CURRENT (TYPICAL) VCC = 600V VGE = -10V di/dt = 2000A/µs Tj = 25°C Tj = 125°C 104 103 102 SWITCHING TIME, tr, (µs) RISE TIME VS. GATE RESISTANCE (TYPICAL) VCC = 600V VGE = ±15V IC = 600A Tj = 25°C Tj = 125°C 5 2010 15 5 2010 15 5 2010 15 GATE RESISTANCE, RG, (Ω) 102 101 100 0 600200 400 FORWARD CURRENT, IF, (AMPERES)FORWARD CURRENT, IF, (AMPERES) REVERSE RECOVERY LOSS, Edsw, (mJ/PULSE) REVERSE RECOVERY LOSS VS. FORWARD CURRENT (TYPICAL ) 103 102 101 0 600200 400 REVERSE RECOVERY TIME, trr, (ns) REVERSE RECOVERY TIME (TYPICAL) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (pF) 10-2 10010-1 101 102 CAPACITANCE VS. COLLECTOR-EMITTER VOLTAGE (TYPICAL) 105 103 102 104 VCC = 600V VGE = -10V di/dt = 2000A/µs Tj = 25°C Tj = 125°C VCC = 600V VGE = -10V di/dt = 2000A/µs Tj = 25°C Tj = 125°C Cies Coes Cres VGE = 0V f = 1MHz Tj = 25°C

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG600Q2YS60A Dual IGBTMOD™ Compact IGBT Series Module COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IiC, (AMPERES) 0 200 600400 800 1000 1200 1400 REVERSE BIAS SAFE OPERATION AREA (TYPICAL) 104 100 102 103 101 GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE CHARGE, QG, (nC) GATE-EMITTER VOLTAGE VS. GATE CHARGE (TYPICAL) 600V 200V 400V VCE = 0V COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE CHARGE, QG, (nC) COLLECTOR-EMITTER VOLTAGE VS. GATE CHARGE (TYPICAL) 200 400 600 800 2000 400030001000 IC = 400A RL = 1.0Ω Tj = 25°C 2000 400030001000 IC = 400A RL = 1.0Ω Tj = 25°C VGE = ±15V RG = 7.5Ω Tj ≤ 125°C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IiC, (AMPERES) 0 400 800 1200 1600 SHORT CIRCUIT SAFE OPERATING AREA (TYPICAL) 5000 3000 1000 4000 2000 PULSE WIDTH, tw, (s) GATE RESISTANCE RG, (Ω) SHORT CIRCUIT PULSE WIDTH VS. GATE RESISTANCE (TYPICAL) 5 10 2015 TIME, (s) TRANSIENT IMPEDANCE, Rth(j-c) 10-3 10-2 10-1 100 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 100 10-2 10-4 10-3 10-1 VCC = 600V VGE = ±15V RG = 7.5Ω Tj ≤ 125°C VCC = 950V VGE = ±15V Tj = 25°C SINGLE PULSE STANDARD VALUE = Rth(j-c)D = 0.056°C/W TC = 25°C SINGLE PULSE STANDARD VALUE = Rth(j-c)Q = 0.029°C/W TC = 25°C TIME, (s) TRANSIENT IMPEDANCE, Rth(j-c) 10-3 10-2 10-1 100 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 100 10-2 10-4 10-3 10-1

Product Information

MG600Q2YS60A specifications and overview.

Summary

Compact IGBT

Description

Compact IGBT

Source title MG600Q2YS60A Datasheet(PDF) - Powerex Power Semiconductors

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