MG600J2YS61A

MG600J2YS61A POWEREX | Alldatasheet

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Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ Compact IGBT Series Module

600 Amperes/600 Volts

Description: Powerex Dual IGBTMOD™ Compact IGBT Series Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half- bridge confi guration, with each transistor having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplifi ed system assembly and thermal management. Features: £ Over-Current and Over-Temperature Protection £ Low V CE(sat) £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ UPS £ Welding Power Supplies £ Laser Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. MG600J2YS61A is a 600V (VCES), 600 Ampere Dual IGBTMOD™ Compact IGBT Series Module. Type Current Rating V CES Amperes Volts (x 10) MG 600 60 Dimensions Inches Millimeters H 0.60 15.24 J 0.63 16.0 K 0.51 13.0 L 0.24 6.0 M 0.22 Dia. 5.5 Dia. Dimensions Inches Millimeters P M6 M6 T 0.24 Rad. 6.0 Rad. U 0.02 0.64 V 0.60 15.3 Z 0.01 Dia. 3.0 Dia. BB 0.10 2.54 Outline Drawing and Circuit Diagram DETAIL "A" A B L M EC D F G Y AA BB BB BB Q XX J H K E2 C1 C2E1 DETAIL "A" OT FO FO E1/C2 W W Z U V P N R Q R S

1 G(L)

2 FO(L)

5 G(H)

6 FO(H)

3 E(L)

7 E(H)

8 OPEN

T

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG600J2YS61A Dual IGBTMOD™ Compact IGBT Series Module Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics Symbol MG600J2YS61A Units Power Device Junction Temperature Tj -20 to 150 °C Storage Temperature Tstg -40 to 125 °C Operating Temperature Range Tope -20 ~ 100 °C Mounting Torque, M5 Mounting Screws — 31 in-lb Mounting Torque, M6 Main Terminal Screws — 40 in-lb Module Weight (Typical) — 375 Grams Isolation Voltage, AC 1 minute, 60Hz Sinusoidal VISO 2500 Volts IGBT Inverter Sector Collector-Emitter Voltage VCES 600 Volts Gate-Emitter Voltage VGES ±20 Volts Collector Current (TC = 25°C) IC 600 Amperes Peak Collector Current (TC = 25°C) ICP 1200 Amperes Emitter Current (TC = 25°C) IE 600 Amperes Peak Emitter Current (TC = 25°C) IEM 1200 Amperes Collector Dissipation (TC = 25°C) PC 2770 Watts IGBT Control Sector Control Voltage (OT) VD 20 Volts Fault Input Voltage VFO 20 Volts Fault Input Current IFO 20 mA Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units IGBT Inverter Sector Gate Leakage Current IGES VGE = ±20V, VCE = 0V — — -4 / +3 mA VGE = 10V, VCE = 0V — — 100 nA Collector-Emitter Cutoff Current ICES VCE = 600V, VGE = 0V — — 1.0 mA Gate-Emitter Cutoff Voltage VGE(off) VCE = 5V, IC = 600mA 6.0 7.0 8.0 Volts Collector-Emitter Saturation Voltage V CE(sat) V GE = 15V, IC = 600A, Tj = 25°C — 2.2 2.5 Volts VGE = 15V, IC = 600A, Tj = 125°C — — 2.8 Volts Input Capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz — 125 — nF Inductive Load td(on) 0.1 — 1.0 µs Switching toff VCC = 300V, IC = 600A, — — 2.0 µs Times tf VGE = ±15V, RG = 5.1Ω — — 0.5 µs Reverse Recovery Time trr — — 0.5 µs Emitter-Collector Voltage VEC IE = 600A — 2.2 2.6 Volts

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG600J2YS61A Dual IGBTMOD™ Compact IGBT Series Module Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Control Sector Fault Output Current OC VGE = 15V 720 — — A Over-Temperature OT — 100 — 125 °C Fault Output Delay Time td(Fo) VCC = 300V, VGE = ±15V — — 6.5 µs Thermal Characteristics Characteristic Symbol Condition Min. Typ. Max. Units Junction to Case Thermal Resistance R th(j-c)Q IGBT (Per 1/2 Module) — — 0.045 °C/Watt Rth(j-c)D FWDi (Per 1/2 Module) — — 0.068 °C/Watt Contact Thermal Resistance Rth(c-f) — — 0.013 — °C/Watt Recommended Conditions for Use Characteristic Symbol Condition Value Units Supply Voltage VCC Applied across C1-E2 Terminals ≤375 Volts Gate Voltage VGE — 13.8 ~ 16 Volts Gate Resistance RG — ≥5.1 Ω Switching Frequency fC — 0 ~ 20 kHz GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 0 5 10 15 20 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 100 200 300 600 100 200 300 600 0 53 41 2 COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS) Tj = 25°C Tj = 25°C Tj = 25°C FREE-WHEEL DIODE CHARACTERISTICS (TYPICAL) VGE = 0V Tj = 25°C Tj = 125°C Tj = -40°C IC = 900A IC = 600A IC = 300A GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 0 5 10 15 20 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Tj = 125°C IC = 900A IC = 600A IC = 300A GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 0 5 10 15 20 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Tj = -40°C IC = 900A IC = 600A IC = 300A COLLECTOR CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 100 200 300 600 400 400400 500 500500 0 53 41 2 COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS) VGE = 20V 15V 12V 10V VGE = 20V 15V 12V 10V FORWARD CURRENT, IF, (AMPERES) FORWARD VOLTAGE, VF, (VOLTS)

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG600J2YS61A Dual IGBTMOD™ Compact IGBT Series Module COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME, tf, (µs) FALL TIME VS. COLLECTOR CURRENT (TYPICAL) 103 102 101 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME, tr, (µs) RISE TIME VS. COLLECTOR CURRENT (TYPICAL) 104 103 102 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME, td(off), (µs) TURN-OFF DELAY TIME VS. COLLECTOR CURRENT (TYPICAL) VCC = 300V VGE = ±15V RG = 5.1Ω 104 103 102 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME, td(on), (µs) TURN-ON DELAY TIME VS. COLLECTOR CURRENT (TYPICAL) 104 103 102 0 252010 155 GATE RESISTANCE, RG, (Ω) SWITCHING TIME, toff, (µs) TURN-OFF TIME VS. GATE RESISTANCE (TYPICAL) VCC = 300V VGE = ±15V IC = 600A Tj = 25°C Tj = 125°C 104 103 102 0 252010 155 GATE RESISTANCE, RG, (Ω) SWITCHING TIME, ton, (µs) TURN-ON TIME VS. GATE RESISTANCE (TYPICAL) VCC = 300V VGE = ±15V IC = 600A Tj = 25°C Tj = 125°C 104 103 102 0 700400 600500300200100 COLLECTOR CURRENT, IC, (AMPERES) 86420 1210 GATE-EMITTER VOLTAGE, VGE, (VOLTS) TRANSFER CHARACTERISTICS (TYPICAL) 200 1000 600 400 800 Tj = 25°C Tj = 125°C Tj = -40°C COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME, toff, (µs) TURN-OFF TIME VS. COLLECTOR CURRENT (TYPICAL) 0 700400 600500300200100 0 700400 600500300200100 0 700400 600500300200100 Tj = 25°C Tj = 125°C 0 700400 600500300200100 0 700400 600500300200100 VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C 104 103 102 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING TIME, ton, (µs) TURN-ON TIME VS. COLLECTOR CURRENT (TYPICAL) VCE = 5V

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG600J2YS61A Dual IGBTMOD™ Compact IGBT Series Module 0 700400 600500200 300100 0 700400 600500200 300100 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS, Eoff, (mJ/PULSE) SWITCHING LOSS (OFF) VS. COLLECTOR CURRENT (TYPICAL) VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C 101 103 102 SWITCHING LOSS, Eoff, (mJ/PULSE) SWITCHING LOSS (OFF) VS. GATE RESISTANCE (TYPICAL) 0 2515 20105 GATE RESISTANCE, RG, (Ω) VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C 102 101 100 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS, Eon, (mJ/PULSE) SWITCHING LOSS (ON) VS. COLLECTOR CURRENT (TYPICAL) VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C 101 103 102 SWITCHING LOSS, Eon, (mJ/PULSE) SWITCHING LOSS (ON) VS. GATE RESISTANCE (TYPICAL) 0 2515105 GATE RESISTANCE, RG, (Ω) VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C 103 102 101 0 600400 500200 300100 EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CURRENT, Irr, (AMPERES) REVERSE RECOVERY CURRENT (TYPICAL) VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C 104 103 102 0 252010 155 GATE RESISTANCE, RG, (Ω) SWITCHING TIME, tr, (µs) RISE TIME VS. GATE RESISTANCE (TYPICAL) VCC = 300V VGE = ±15V IC = 600A Tj = 25°C Tj = 125°C 104 103 102 0 252010 155 GATE RESISTANCE, RG, (Ω) SWITCHING TIME, td(off), (µs) TURN-OFF DELAY TIME VS. GATE RESISTANCE (TYPICAL) VCC = 300V VGE = ±15V IC = 600A Tj = 25°C Tj = 125°C 104 103 102 0 252010 155 GATE RESISTANCE, RG, (Ω) SWITCHING TIME, td(on), (µs) TURN-ON DELAY TIME VS. GATE RESISTANCE (TYPICAL) VCC = 300V VGE = ±15V IC = 600A Tj = 25°C Tj = 125°C 104 103 102 0 252010 155 GATE RESISTANCE, RG, (Ω) SWITCHING TIME, tf, (µs) FALL TIME VS. GATE RESISTANCE (TYPICAL) VCC = 300V VGE = ±15V IC = 600A Tj = 25°C Tj = 125°C

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG600J2YS61A Dual IGBTMOD™ Compact IGBT Series Module COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IiC, (AMPERES) 0 100 300 400200 600500 700 REVERSE BIAS SAFE OPERATION AREA (TYPICAL) 104 103 101 100 102 VGE = ±15V RG = 5.1Ω Tj ≤ 125°C GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE-EMITTER VOLTAGE VS. GATE CHARGE (TYPICAL) 200V 100V 300V VCE = 0V COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE CHARGE, QG, (nC) COLLECTOR-EMITTER VOLTAGE VS. GATE CHARGE (TYPICAL) 100 200 300 400 500 GATE CHARGE, QG, (nC) 1000 600050004000300020000 1000 60005000400030002000 IC = 300A RL = 0.5Ω Tj = 25C IC = 300A RL = 0.5Ω Tj = 25C TIME, (s) TRANSIENT IMPEDANCE, Rth(j-c) 10-3 10-2 10-1 100 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 100 10-2 10-4 10-3 10-1 TIME, (s) TRANSIENT IMPEDANCE, Rth(j-c) 10-3 10-2 10-1 100 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 100 10-2 10-4 10-3 10-1 SINGLE PULSE STANDARD VALUE = Rth(j-c)Q = 0.045°C/W SINGLE PULSE STANDARD VALUE = Rth(j-c)D = 0.068°C/W TC = 25°C TC = 25°C 101 100 10-1 0 700400 600500200 300100 EMITTER CURRENT, IE, (AMPERES)EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY LOSS, Edsw, (mJ/PULSE) REVERSE RECOVERY LOSS VS. FORWARD CURRENT (TYPICAL) VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C 103 102 101 0 600400 500200 300100 REVERSE RECOVERY TIME, trr, (ns) REVERSE RECOVERY TIME (TYPICAL ) VCC = 300V VGE = ±15V RG = 5.1Ω Tj = 25°C Tj = 125°C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (pF) 10-2 10-1 100 101 102 CAPACITANCE VS. COLLECTOR-EMITTER VOLTAGE (TYPICAL) 106 104 103 105 Cies Coes Cres VGE = 0V f = 1MHz TC = 25°C