MG200J6ES61 POWEREX | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six IGBTMOD™ Compact IGBT Series Module
200 Amperes/600 Volts
Description: Powerex Six IGBTMOD™ Compact IGBT Series Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half- bridge confi guration, with each transistor having a reverse- connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplifi ed system assembly and thermal management. Features: £ Integrated Thermistor £ Low V CE(sat) £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ UPS £ Welding Power Supplies £ Laser Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. MG200J6ES61 is a 600V (VCES), 200 Ampere Six IGBTMOD™ Compact IGBT Series Module. Current Rating V CES Type Amperes Volts (x 10) MG 200 60 Dimensions Inches Millimeters J 0.55 14.0 K 0.39 10.0 L 0.24 6.0 M 0.22 Dia. 5.5 Dia. N M5 M5 Dimensions Inches Millimeters T 0.24 Rad. 6.0 Rad. U 0.53 13.6 W 0.32 8.2 Y 0.88 22.5 Z 0.21 5.35 AA 0.42 10.7 Outline Drawing and Circuit Diagram P DETAIL "A" A B L M E X C H H D F S T J K N P VU W DETAIL "A" CN-1CN-2 U V W CN-1:7 CN-1:6 CN-1:5 CN-2:3 CN-1:4 CN-1:3 CN-2:2 CN-1:2 CN-1:1 CN-2:1 CN-1:8 CN-2:4 N W Z AA V U YY N G P P QQ R R
1 G(Z)
2 G(Y)
3 G(X)
4 E(L)
1 E(W)
2 G(W)
5 E(U)
6 G(U)
3 E(V)
4 G(V)
7 TH1
8 TH2
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG200J6ES61 Six IGBTMOD™ Compact IGBT Series Module Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics Symbol MG200J6ES61 Units Power Device Junction Temperature Tj -20 to 150 °C Storage Temperature Tstg -40 to 125 °C Mounting Torque, M5 Mounting Screws — 31 in-lb Mounting Torque, M5 Main Terminal Screws — 31 in-lb Module Weight (Typical) — 375 Grams Isolation Voltage, AC 1 minute, 60Hz Sinusoidal VISO 2500 Volts IGBT Inverter Sector Collector-Emitter Voltage (VD = 15V, VCIN = 15V) VCES 600 Volts Gate-Emitter Voltage VGES ±20 Volts Collector Current (TC = 25°C) IC 200 Amperes Peak Collector Current (TC = 25°C) ICP 400 Amperes Emitter Current (TC = 25°C) IE 200 Amperes Peak Emitter Current (TC = 25°C) IEM 400 Amperes Collector Dissipation (TC = 25°C) PC 1000 Watts Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units IGBT Inverter Sector Gate Leakage Current IGES VGE = 20V, VCE = 0V — — ±500 nA Collector-Emitter Cutoff Current ICES VGE = 0V, VCE = 600V — — 1.0 mA Gate-Emitter Cutoff Voltage VGE(off) VCE = 5V, IC = 200mA 5.0 6.5 8.0 Volts Collector-Emitter Saturation Voltage V CE(sat) V GE = 15V, IC = 200A, Tj = 25°C — 2.0 2.4 Volts VGE = 15V, IC = 200A, Tj = 125°C — — 2.6 Volts Input Capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz — 40,000 — pF Inductive Load td(on) — — 1.0 µs Switching toff VCC = 300V, IC = 200A, — — 1.2 µs Times tf VGE = ±15V, RG = 10Ω — — 0.5 µs Reverse Recovery Time trr — — 0.3 µs Emitter-Collector Voltage VEC IE = 200A — 2.2 2.6 Volts Thermal Characteristics Characteristic Symbol Condition Min. Typ. Max. Units Zero Power Resistance R25 ITM = 0.2mA 100 — k Ω B Value B25/85 TC = 25°C/TC = 85°C — 4390 — K Junction to Case Thermal Resistance R th(j-c)Q IGBT (Per 1/6 Module) — — 0.125 °C/Watt Rth(j-c)D FWDi (Per 1/6 Module) — — 0.195 °C/Watt Contact Thermal Resistance Rth(c-f) — — 0.05 — °C/Watt Recommended Conditions for Use Characteristic Symbol Condition Value Units Supply Voltage VCC Applied across P-N Terminals ≤400 Volts Gate Voltage VGE — 13.5 ~ 16.5 Volts Switching Frequency fC — 0 ~ 20 kHz
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG200J6ES61 Six IGBTMOD™ Compact IGBT Series Module GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 0 5 10 15 20 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT, IC, (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 100 200 300 400 500 100 200 300 400 500 102 101 100 0 250200100 15050 COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS) Tj = 25°C COLLECTOR CURRENT, IC, (AMPERES) 86420 141210 GATE-EMITTER VOLTAGE, VGE, (VOLTS) TRANSFER CHARACTERISTICS (TYPICAL) 100 200 300 400 500 Tj = 25°C Tj = 125°C Tj = -40°C COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS, E(off), (mJ/PULSE) SWITCHING LOSS (OFF) VS. COLLECTOR CURRENT (TYPICAL) VGE = 15V Tj = 25°C Tj = 125°C FORWARD CURRENT, IF, (AMPERES) FREE-WHEEL DIODE CHARACTERISTICS (TYPICAL) FORWARD VOLTAGE, VF, (VOLTS) VGE = 0V Tj = 25°C Tj = 125°C Tj = -40°C IC = 400A IC = 200A IC = 100A GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 0 5 10 15 20 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Tj = 125°C IC = 400A IC = 200A IC = 100A GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 0 5 10 15 20 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Tj = -40°C IC = 400A IC = 200A IC = 100A VCE = 5V VCC = 300V VGE = ±15V RG = 10Ω Tj = 25°C Tj = 125°C 102 101 100 0 250200100 15050 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS, E(on), (mJ/PULSE) SWITCHING LOSS (ON) VS. COLLECTOR CURRENT (TYPICAL) VCC = 300V VGE = ±15V RG = 10Ω Tj = 25°C Tj = 125°C 100 102 101 SWITCHING LOSS, E(off), (mJ/PULSE) SWITCHING LOSS (OFF) VS. GATE RESISTANCE (TYPICAL) 0 2515 20105 GATE RESISTANCE, RG, (Ω) VCC = 300V VGE = ±15V RG = 10Ω Tj = 25°C Tj = 125°C
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 MG200J6ES61 Six IGBTMOD™ Compact IGBT Series Module COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 5000 25001000 1500 2000 GATE CHARGE, QG, (nC) GATE CHARGE VS. COLLECTOR-EMITTER VOLTAGE (TYPICAL) 100 200 300 400 500 GATE-EMITTER VOLTAGE, VCE, (VOLTS) CAPACITANCE, Cies, Coes, Cres, (nF) 10-2 10-1 100 101 102 CAPACITANCE VS. COLLECTOR-EMITTER VOLTAGE (TYPICAL) 105 102 103 104 100 102 101 SWITCHING LOSS, ESW(on), (mJ/PULSE) SWITCHING LOSS (ON) VS. GATE RESISTANCE (TYPICAL) 5 3020 251510 GATE RESISTANCE, RG, (Ω) VCC = 300V VGE = ±15V RG = 200A Tj = 25°C Tj = 125°C 100 200 300 400 500 COLLECTOR CURRENT, IC, (AMPERES) REVERSE BIAS SAFE OPERATION AREA (TYPICAL) 0 700200 300 400 500 600100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) VGE = ±15V RG = 10Ω Tj ≤ 125°C GATE-EMITTER VOLTAGE, VGE, (VOLTS) GATE CHARGE VS. GATE-EMITTER VOLTAGE (TYPICAL) VGE = 0V f = 1MHz TC = 25°C Cies Coes Cres IC = 200A 5000 25001000 1500 2000 GATE CHARGE, QG, (nC) IC = 200A TIME, (s) TRANSIENT IMPEDANCE, Rth(j-c) 10-3 10-2 10-1 100 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 101 10-1 10-2 100 TIME, (s) TRANSIENT IMPEDANCE, Rth(j-c) 10-3 10-2 10-1 100 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 101 10-1 10-2 100 SINGLE PULSE STANDARD VALUE = Rth(j-c)D = 0.125°C/W SINGLE PULSE STANDARD VALUE = Rth(j-c)D = 0.195°C/W TC = 25°C TC = 25°C 300V200V 100V VCE = 0V