MEL82 MICRO-ELECTRONICS | Alldatasheet
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DESCRIPTION / | | 9297 | (0.117) j MEL82 is NPN silicon planar photo- | transistor. It is encapsulated in a 3mm | diameter, low profile and flangeless oe) <—Ho | water clear transparent epoxy package. | L— (0.0118) : 05 It features ultra high illumination 0.75(0.03) (0.02) sensitivity, fast response time, and mx | spectrally matched with the infra-red 05 Collector _ j itter MIB8T series om) : | emitter } . 75(0.06) | L Loewen | ee © Alldimension in mm(inch) ‘ Scale \\ ABSOLUTE MAXIMUM RATINGS 2 TLb3mm | Collector-Emitter Voltage VCEO 20V Emitter-Collector Voltage VECO 5V Continuous Power Dissipation Pd SOmW —~Dperating Junction Temperature Tj -40 to +85°C storage Temperature Range Tstg -40 to + 100°C ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL | MIN MAX | UNIT CONDITIONS | Collector-Emitter Breakdown Voltage | BVCEO 20 | Vv | IC=100pA Ee=0 | Emitter-Collector Breakdown Voltage BVECO BR} | v | IC=100pA Ee=0 | | | Dark Current ID | 100 | nA _ | VCE=10V Ee=0 Light Current | I | 35 | mA VCE=SV Ee=SmW/cm? * Collector-Emitter Saturation Voltage | VCE(sat) | 03 | Vv | 1C=S00uA Ee=20mW/em? | i | | Rise Time | Tr | 3 TYP ops Vee=SV IC=4mA RL=1000hm Fall Time | TR | 3 TYP | ps | Veo=SVIC=4mA RL=1000hm * Measured at noted irradiance as emitted from tungstun filament lamp at a color temperature of 2854°K. MICRO ELECTRONICS LTD. 38, Hung To Road, Microtron Bulding, Kwun Tong, Kowloon, Hong Kong.
MEL82 TYPICAL CHARACTERISTICS —_ ANGULAR RESPONSE 20° 10° “9° 19° 20° SPECTRAL CHARACTERISTICS PAL | eA ° ° {\\ Oe g COCOONS DSH... & LOE we Oo HD SCO KSA S 50° i< ey, < 50° y LIAL TTA TT SSR eC CCE LO wo KOSTA oe 5 Oey RATA S| 3 J CECCCE EQUA SCOTT WAVELENGTH > _ (nm) PHOTO CURRENT CHARACTERISTICS, cou aR CHE TTER VOLTAGE eee, TITATO _ ‘ee A SN TTT eae 4, i} 4 il Ze a Z [| vapa © SII & Lo eray. e Reta AA , Eee oT Set ye EL BAIT eT ora 8 33 Bag Bisdedge eet rit 30 erat as COLLECTOR-EMITTER VOLTAGE VCE (vy)