ME3113B MICRO-ELECTRONICS | Alldatasheet
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Technical content
Power Dissipation Pd 120mW Continuous Forward Current I F 30mA Reverse Voltage V R 10V Operating Temperature Range Topr -20 to +70°C Storage Temperature Range Tstg -25 to +75°C (Ta=25°C) PARAMETER SYMBOL MIN TYP MAX UNIT CONDITIONS Forward Voltage VF 3.3 3.5 V IF=20mA Reverse Current IR 100 μA VR=5V Dominant Wavelength λd 465 470 nm IF=20mA Spectral Line Half Width Δλ 30 nm IF=20mA (Ta=25°C) PARAMETER SYMBOL MIN TYP MAX UNIT CONDITIONS Forward Voltage VF 3.3 3.5 V IF=20mA Reverse Current/Chip IR 100 μA VR=10V Dominant Wavelength λd 465 470 nm IF=20mA Spectral Line Half Width Δλ 30 nm IF=20mA Brightness B 50 80 cd/m2 IF=20mA CAUTION Static eletricity and surge damages the backlight ,It is recommended to use a wrist band or anti-eletrostatic glove when handling the backlight . All devices,equipment and machinery must be properly grounded. REV : A 28/4/2006 p 1 of 2 ELECTRO-OPTICAL CHARACTERISTICS (CHIP) ELECTRO-OPTICAL CHARACTERISTICS (ME3113B) MICRO ELECTRO NICS
MECHANICAL OUTLINE: RECOMMENDED CIRCUIT: REV : A 28/4/2006 p 2 of 2