MCR100 FOSHAN | Alldatasheet
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Rev.F Mar.-2016 DATA SHEET http://www.fsbrec.com 1 / 6 TO-92 塑封封装单向可控硅。Thyristor in a TO-92 Plastic Package. 阻断电压高、浪涌电流承受能力强。 High Blocking Voltage、High Surge Current Capability. 应用于高压控制电路。 Applied to high Voltage control circuit. PIN1：Anode PIN 2 ：Gate PIN 3 ：Cathode 放大及印章代码 / h FE Classifications & Marking 见印章说明。See Marking Instructions. 描述 / D e s c r i p t i o n s 特征 / Features 用途 / Applications 内部等效电路 / Equivalent Circuit 引脚排列 / P i n n i n g 1 23
Rev.F Mar.-2016 DATA SHEET http://www.fsbrec.com 2 / 6 参数 Parameter 符号 Symbol 测试条件 Test Conditions 数值 Rating 单位 Unit Repetitive peak off-state voltages VDRM， Tj=-40 to 110 ,Sine Wave,℃ 50 to 60Hz,Gate Open 100 200 400 600 V Repetitive peak off-state voltages VRRM MCR100-3 MCR100-4 MCR100-6 MCR100-8 RMS on-state current IT(RMS) Tc=80℃ 0.8 A Non-repetitive peak on-state current ITSM 1/2 Cycle, Sine Wave, 60Hz, Tj=25℃ 10 A t for fusing I 2t t=8.3ms 0.415 A 2S Peak gate power P GM T A=25 ,Pulse Width ≤1.0μs℃ 100 mW Peak Average power P G(AV) TA=25 ,t=8.3ms℃ 100 mW Peak gate current I GM TA=25 ,Pulse Width ≤1.℃ 0μs 1.0 A Peak Reverse Gate Voltage V RGM T A=25 ,Pulse Width ≤1.0μs℃ 5.0 V Junction Temperature Tj -40～125 ℃ Storage Temperature Range Tstg -40～150 ℃ 参数 Parameter 符号 Symbol 测试条件 Test Conditions 最小值 Min 典型值 Typ 最大值 Max 单位 Unit Repetitive peak off-state current IDRM,IRRM VD=Rated VDRM and VRRM RGK=1KΩ Tc =25℃ 10 μA Tc=110℃ 100 On-state voltage V TM I TM=1.0A peak @ TA=25℃ 1.7 V Gate trigger current I GT VAK=7.0Vdc RL=100Ω T C=25℃ 40 200 μA Holding current I H VAK=7.0Vdc Initiating Current=20mA Tc =25℃ 0.5 5.0 mA Tc =-40℃ 10 Latch Current I L VAK=7.0V, Ig=200μA Tc =25℃ 0.6 10 mA Tc =-40℃ 15 Gate trigger voltage V GT VAK=7.0Vdc, RL=100Ω Tc =25℃ 0.62 0.8 V Tc =-40℃ 1.2 Forward Voltage Application Rate dv/dt VD=Rated VDRM Exponential Waveform, R GK=1KΩ T j=110℃ 20 35 - V/us Critical rate of rise of off-state voltage di/dt IPK=20A P W=10usec; diG/dt=1A/usec I GT=20mA 50 A/us 极限参数 / Absolute Maximum Ratings(Ta=25 ℃) 电性能参数 / Electrical Characteristics(Ta=25 ℃)
Rev.F Mar.-2016 DATA SHEET http://www.fsbrec.com 3 / 6 电参数曲线图 / Electrical Characteristic Curve
Rev.F Mar.-2016 DATA SHEET http://www.fsbrec.com 4 / 6 外形尺寸图 / Package Dimensions
Rev.F Mar.-2016 DATA SHEET http://www.fsbrec.com 5 / 6 印章说明 / Marking Instructions 说明： MCR100： 为产品型号 Note: BR: Company Code. MCR100: Product Type. 3： Specification Code **: Lot No. Code, code change with Lot No. MCR100 ** BR
Rev.F Mar.-2016 DATA SHEET http://www.fsbrec.com 6 / 6 波峰焊温度曲线图(无铅) / Temperature Profile for Dip Soldering(Pb-Free) 说明： N o t e : 1、预热温度 25～150℃，时间 60～90sec; 1.Preheating:25~150 ℃, Time:60~90sec. 3、焊接制程冷却速度为 2～10℃/sec. 3. Cooling Speed: 2~10℃/sec. 耐焊接热试验条件 / Resistance to Soldering Heat Test Conditions 温度：270±5℃ 时间：10±1 sec. Temp.:270±5 ℃ Time:10±1 sec 包装规格 / Packaging SPEC. 散件包装 / B U L K Package Type 封装形式 Units 包装数量 Dimension 包装尺寸 (unit ：mm3) Units/Bag 只/袋 Bags/Inner Box 袋/盒 Units/Inner Box 只/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Bag 袋 Inner Box 盒 Outer Box 箱 TO-92 1,000 10 10,000 5 50,000 135×190 237×172×102 560×245×195 1,000 10 10,000 10 100,000 135×190 237×172×102 560×245×375 编带包装 / A M M O Package Type 封装形式 Units 包装数量 Dimension 包装尺寸 (unit ：mm3) Units/tape 只/纸带 Tape/Inner Box 纸带/盒 Rows/Inner Box 纸带层/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Inner Box 盒 Outer Box 箱 TO-92 3,000 1 120 10 30,000 328×230×42 小箱 480×346×235， 大箱 547×407×268 使用说明 / N o t i c e s