MCR100 TEL | Alldatasheet
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MCR100 SERIES Silicon Controlled Rectifier VRRM = 100-600V, IF(RMS) = 0.8A Symbol K A G 100 200 400 600 Maximum Storage Temperature Range On-State RMS Current IT(RMS) Peak Non-Repetitive Surge Current ITSM MAXIMUM RATINGS Parameter Symbol (Tj = 25 OC unless stated otherwise) Repetitive Peak Off-State Voltage VRRM MCR100-3 Maximum Junction Temperature Range Tj T(STG) 0.8 at tc = 85OC I 2T for Fusing 8.3ms I 2 T Volt Unit Amp Amp OC OC A2/S0.415 -40 to +150 -40 to +110 MCR100-4 MCR100-6 MCR100-8 Peak Reverse Gate Voltage VGRM Volt5 Peak Gate Current IGM Amp0.1 Forward Average Gate Power PG(AV) 0.1 Watt Forward Peak Gate Power PGM 1.0 Watt ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise Parameter Unit Symbol Value TypMin Max Peak Forward On-State Voltage Repetitive Peak Reverse Current Volt VTM IRRM Condition 1.7 ITM = 1.0 Amps VR = VRRM. tJ=110OC 100 Thermal Resistance (Junction to Case) 75 Rate of Rise of Off-State Voltage dV/dt RTH (J-c) OC/W µA Gate Trigger Voltage VGT Volt0.800.62 Gate Trigger Current IGT 20040 Latch Current IL mA10.00.60 Holding Current IH mA5.00.50
20 V/µS
A/µSRate of Rise of Off-State Current dA/dt 50 Mechanical Outline All Dimensions in Inches (Millimeters) Third Angle Projection 0.205(5.20) max 0.175 (4.45) min 0.210(5.33) max 0.170 (4.32) min 0.500(12.70) min 0.165(4.19) max 0.125(3.18) min 0.021(50.533) max 0.016 (0.407) min 0.055(1.39) max 0.045 (1.15) min 0.055(1.39) max 0.045 (1.15) min 0.135(3.43) min 0.105(2.66) max 0.080(2.04) min 1 2 3 1 2 3 Cathode Gate Anode Case:TO - 92