MAS6512

MAS6512 MAS | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 26

Technical content

DA6512.000

11 July, 2012

I2C is a registered trademark of NXP. 1 (26) MAS6512 Capacitive Sensor Signal Interface IC

• Single or Dual Capacitance Sensors
• Low Voltage Operation
• Low Power Consumption
• On Chip Temperature Sensor
• Internal Clock Oscillator
• 16-Bit Ratiometric ∆∆ ∆∆Σ Σ ΣΣ CDC
• EEPROM Calibration Memory
• Serial Interface

DESCRIPTION

MAS6512 capacitive sensor signal Interface IC can interface both single and dual capacitance sensors. It uses a 16-bit Capacitance-to-Digital Converter (CDC), which employs a delta-sigma (∆Σ ) conversion technique. The output data from the ∆Σ -modulator is processed by an on-chip decimator filter, producing a high resolution conversion result. The converter is run by an internal clock oscillator making an external converter clock unnecessary. The converter input range is programmable to meet various sensor offset and changing capacitance values. Maximum sensor capacitance is 40pF but higher maximum value can be reached by using slower conversion speed or scaling the signal by using an external series capacitor. The measurement resolution depends on the programmed capacitance range and over sampling ratio (OSR) selections. MAS6512 supports two capacitance measurement modes. The output can be proportional either to capacitance difference (C S-CR) or to capacitance ratio (C S-CR)/C S. The IC is designed especially to meet the requirement for low power consumption, thus making it an ideal choice for battery powered systems. Current consumption values of 28 µA with high resolution or 1.9 µA with low resolution, at a conversion rate of one conversion per second, can be achieved. In addition to measuring capacitance the device has an internal temperature sensor for temperature measurement and temperature compensation purposes. The 256-bit EEPROM memory stores trimming and calibration coefficients on chip. A serial interface, compatible with a bi- directional 2-wire I 2C bus and 4-wire SPI bus, is used for conversion setup, starting a conversion and reading the conversion result. FEATURES APPLICATIONS

• Single and Differential Capacitive Sensors
• Sensor Offset and Gain Adjustment
• Changing Capacitance Range 2pF… 30pF
• Internal Offset Capacitance Matrix 0pF…22pF
• External Capacitance up to 40pF (or higher using external clock)
• Resolution 14 bit (OSR=4096, ∆ C=20pF)
• Internal Clock Oscillator
• On Chip Temperature Sensor -40 °C...+85 °C
• Low Voltage Operation 1.8 V…3.6 V
• Low Supply Current: 1.9 µA...28 µA
• 16-bit Ratiometric ∆Σ CDC
• Internal 256-bit EEPROM Calibration Memory
• I 2C and SPI Compatible Serial Interface
• QFN-16 Package
• Capacitive Pressure Sensors
• Humidity Sensors
• Medical Devices
• Flow Meters
• Sport Watches
• Altimeter and Barometer Systems
• Mobile and Battery Powered Systems
• Low Frequency Measurement applications
• Current/Power Consumption Critical Systems
• Industrial and Process Control applications in noisy environments This is preliminary information on a new product under development. Micro Analog Systems Oy reserves the right to make any changes without notice.

Figure 1. MAS6512 block diagram capacitance ratio (C S-CR)/C S measurement mode. are programmable in 8-bit steps (86fF/step). frequency is needed in this case. XSPI pin is for selecting which bus type is used. including the serial communication.

DA6512.000 3 (26) ABSOLUTE MAXIMUM RATINGS All Voltages with Respect to Ground Parameter Symbol Conditions Min Max Unit Supply Voltage V DD -0.3 5.0 V Voltage Range for All Pins -0.3 V DD + 0.3 V Latchup Current Limit I LUT For all pins, test according to JESD78A. -100 +100 mA Junction Temperature T Jmax + 150 ° C Storage Temperature T S Note 1 - 55 +125 ° C Note 1: See EEPROM memory data retention at hot temperature. Storage or bake at hot temperatures will reduce the wafer level trimming and calibration data retention time. Note: The absolute maximum rating values are stress ratings only. Functional operation of the device at conditions between maximum operating conditions and absolute maximum ratings is not implied and EEPROM contents may be corrupted. Exposure to these conditions for extended periods may affect device reliability (e.g. hot carrier degradation, oxide breakdown). Applying conditions above absolute maximum ratings may be destructive to the devices. Note: This is a CMOS device and therefore it should be handled carefully to avoid any damage by static voltages (ESD). RECOMMENDED OPERATION CONDITIONS Parameter Symbol Conditions Min Typ Max Unit Supply Voltage V DD Internal regulator disabled Internal regulator enabled 1.8 1.9 2.7 2.7 3.6 3.6 V Supply Voltage at EEPROM Programming V Operating Temperature T A -40 +25 +85 ° C Note 1. The recommended condition for EEPROM programming is room temperature.

ELECTRICAL CHARACTERISTICS

Operating Conditions: VDD = 2.7 V, TA = -40° C to +85° C, typical values at T A = +27° C, unless otherwise specified. Parameter Symbol Conditions Min Typ Max Unit Internal regulator voltage VREG Regulator enabled 1.8 V Quiescent current I Q All inputs at VDD, no load. Note 1. 0.1 µ A Conversion current consumption I DD_CONV During conversion 390 µ A Average current consumption I DD_AVE 1 conversion/s OSR=4096 OSR=2048 OSR=1024 OSR=512 OSR=256 14.1 7.1 3.7 1.9 µ A Conversion time t CONV OSR=4096 OSR=2048 OSR=1024 OSR=512 OSR=256 82.6 41.6 21.1 10.9 5.8 ms VDD rise time for proper power on reset (POR) t VDD_RISE Note 2. 400 ns Internal system clock oscillator frequency OSCOUT 200 kHz Sensor excitation frequency MCLK No internal clock division Internal clock division kHz Note 1. Setting XCS low activates the EEPROM memory regardless of the XSPI setting and the device consumes 20 µ A …30 µ A current. To minimize current consumption XCS should be set low only during time periods when the device is used during SPI communication. Note 2. Resetting the device using the XCLR pin is necessary in case the VDD rise time is longer than specified here.

DA6512.000 4 (26) Operating Conditions: VDD = 2.7 V, TA = -40° C to +85° C, typical values at T A = +27° C, unless otherwise specified. Parameter Symbol Conditions Min Typ Max Unit Internal offset capacitor matrix selection C R_OS , C S_OS COS_STEP 0.086 22 pF Changing capacitance range in capacitance difference mode ∆ C DIFF No internal clock division Internal clock / 2 pF Maximum allowed sensor capacitance in capacitance difference mode C S_MAX Internal clock Internal clock / 2 External clock Note 1. pF Changing capacitance range in capacitance ratio mode ∆ C RATIO Note 2. 2 20 pF Maximum allowed sensor capacitance in capacitance ratio mode C S_MAX Note 2. >20 pF Integral nonlinearity INL OSR=256, capacitance difference mode 0.012 % of ∆ C RMS resolution Difference mode CODE DIFF ~(C S-CR) ∆ C=20pF OSR=4096 bit RMS resolution Ratio mode CODE RATIO ~(C S-CR)/C S ∆ C=20pF OSR=4096 bit Internal temperature sensor Linearity ±0.35 ±0.5 ° C Gain OSR=4096 OSR=2048 OSR=1024 OSR=512 OSR=256 267,8 267,6 267,3 33,3 4,1 LSB/ ° C Non-calibrated, note 3. -4.5 +3.5 % Offset Non-calibrated, note 3. ±11 ° C Note 1. In capacitance difference mode the maximum allowed sensor and reference capacitor values can be extended using lower external oscillator frequency; C S_MAX =20pF*200kHz/f OSC_EXT . Note 2. In capacitance ratio mode also larger capacitances are possible depending on sensor characteristics. Please contact Micro Analog Systems to check sensor suitability. Note 3. By calibrating the temperature measurement and compensating offset and gain errors an overall accuracy close to the linearity accuracy can be achieved.

DA6512.000 5 (26) Operating Conditions: VDD = 2.7 V, TA = -40° C to +85° C, typical values at T A = +27° C, unless otherwise specified. Parameter Symbol Conditions Min Typ Max Unit EEPROM size 256 bit EEPROM data retention T A = +85 ° C TA = +125 ° C 10 24 years Output data word length 16 bit Linear output code range (10%...90% of full output code range) CODE DIFF Difference mode Cs_min=8pF, Cs_max=12pF, Cr=10pF, gain setting 6Dhex OSR=256 OSR=512 OSR=1024 OSR=2048 OSR=4096 5721 5727 5731 799 6422 51494 51552 51580 CODE RATIO Ratio mode Cs_min=8pF, Cs_max=12pF, Cr=7.68pF, gain setting 4Dhex OSR=256 OSR=512 OSR=1024 OSR=2048 OSR=4096 102 769 5944 5839 5786 790 6389 51362 51486 51547 Full output code range CODE DIFF OSR=256 OSR=512 OSR=1024 OSR=2048 OSR=4096 892 7152 57280 57312 57328 CODE RATIO OSR=256 OSR=512 OSR=1024 OSR=2048 OSR=4096 888 7136 57216 57280 57312 Digital inputs Parameter Symbol Conditions Min Typ Max Unit Input High Voltage V IH VDD = 1.8…3.6V 80% VDD 100% VDD V Input Low Voltage V IL VDD = 1.8…3.6V 0% VDD 20% VDD V Serial Bus Clock Frequency f SCL_SCLK 400 kHz Digital outputs PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT Output high voltage V OH ISource =0.6mA 80% VDD 100% VDD V Output low voltage V OL ISink =0.6mA 0% VDD 20% VDD V Signal rise time t r 200 ns Signal fall time t f 200 ns

modes and one temperature measurement mode. be calculated by using an external MCU. Figure 2. Flow chart for a calibrated MAS6512 sensor system

Table 1. Register and EEPROM data addresses 2C interface address bit A7 = 1.

DA6512.000 8 (26) REGISTER AND EEPROM DATA ADDRESSES MAS6512 includes a 32 bytes (256 bits) EEPROM data memory and eleven registers. Four bytes (32 bits) of EEPROM are reserved for trim values but the remaining 28 bytes (224 bits) are free for storing sensor calibration and other data. See table 1 on the previous page for register and EEPROM data addresses. In the SPI serial bus the address bit A7 selects between write (A7=0) and read (A7=1) operation. In the I 2C serial bus A7 is always high (A7=1) and selection between write and read operation is done with the LSB bit of the I 2C device address. See table 6 in chapter 2-WIRE SERIAL DATA INTERFACE 2C® BUS). MAS6512 has four trim registers: CS capacitor matrix register (E3/63 HEX ), CR capacitor matrix register (E4/64 HEX ), Gain register (E5/65 HEX ) and Oscillator frequency register (E6/66 HEX ). These are marked with “R+T” in table 1. Each of these registers has a corresponding EEPROM byte where trim values can be permanently stored. These are marked with “E+T” in table 1. Trim values are automatically read from EEPROM in the beginning of each conversion when this feature is enabled in the trimming control register (EE/6E HEX ). When disabled it is possible to test different trim data in the trim registers before final trimming values are found and stored in the EEPROM. Reset register (E0/60 HEX ) does not contain any data. Any dummy data written to this register forces a reset. A reset initializes all control registers (addresses E1 HEX …EE HEX ) to a zero value. Test register (E1/61 HEX ) is mainly used for testing and trimming purposes. See table 2 in chapter TEST REGISTER. If an external clock signal is used the test register is needed for selecting the external clock signal. The Measurement control register (E2/62 HEX ) is used for configuring and starting an A/D conversion. The CS (E3/63 HEX ) and the CR (E4/64 HEX ) capacitor matrix registers contain a capacitor value between 0 and 22pF in 86fF steps. The Gain register (E5/65 HEX ) controls the gain of the CDC front-end. Together with the CS and CR values it determines the input capacitance conversion range. The Oscillator frequency control register (E6/66 HEX ) is used only during internal clock oscillator trimming. During trimming this register value is iterated to give the desired 200kHz oscillator frequency. When the best value is found it can be written to the intern al clock oscillator frequency trimming EEPROM address (C6/46 HEX ). In normal operation the trim value is automatically read from the EEPROM memory in the beginning of each conversion. The clock frequency is trimmed by MAS during wafer level testing and there should be no need to modify it. The 16-bit A/D conversion result (capacitance or temperature) is stored into two registers EA HEX (MSB, most significant byte) and EB HEX (LSB, least significant byte). The EEPROM status register (ED/6D HEX ) reflects the EEPROM error correction status. This register can be used to verify that the EEPROM operation has finished without errors. The Trimming control register (E9/69 HEX ) defines if the trim data in the EEPROM or in the registers are used during operation. The Trimming control register is also used for enabling EEPROM write. The default setting is that all trim data is automatically read from the EEPROM memory in the beginning of each conversion and that the EEPROM write is disabled. See the Trimming control register description for details.

to write dummy data to this register to make a reset. frequency is divided by two (see SOSCOUT below). to the internal clock signal. Table 2. MAS6512 test register ( E1/61

5 SEL_EXTCLK Selects external clock 0

1 SOSCOUT Select OSCOUT frequency 0

0 FOSC Forces the oscillator on

Table 3. Measurement control register (E2/62

4 REGEN Regulator Enable 0

3 SCO Start Conversion 0

2 XETS Sensor Selection 0

0 XRC Front end function

characteristics for further details. turned off after each conversion to save power. independently of measurements. temperature sensor (XETS=1) to the ∆Σ -converter.

HEX ) for other operating modes. Table 4. CS capacitor matrix register (E3/63 be programmed to values between 0 and 255. covers the whole linear input range. specification in the Electrical characteristics tab le. during each conversion start. Table 6. Gain register (E5/65

Table 7. Oscillator frequency control register (E6/66 Table 8. MAS6512 EEPROM status register (ED/6D HEX ). Only bits (7:6) are used.

7 ERROR EEPROM error

6 DED EEPROM double

significant byte) at EBHEX . the functions of the Trimming control register. the beginning of each conversion start. Table 9. Trimming control Register (EE/6E

Figure 3. Flow chart for MAS6512 EEPROM write

DA6512.000 15 (26) EEPROM WRITE PROCEDURE This chapter gives instructions for writing data to the EEPROM memory. The MAS6512 16-bit Capacitance to Digital Converter (CDC) has a 256 bit (32 bytes) EEPROM memory. 8 bits (1 byte) has been reserved for storing internal clock oscillator trimming data. 24 other bits (3 bytes) are for trimming the capacitiv e sensor front-end. The remaining 232 bits (28 bytes) are free for other use. See figure 3 on previous page showing the EEPROM write procedure. Make sure in the beginning of the EEPROM write procedure that the MAS6512 initial conditions are met. Connecting VDD triggers power-on-reset (POR) but to make sure the device is reset an additional reset can be given using the XCLR pin or writing any data on the reset register E 0/60 HEX via the serial bus. EEPROM write is enabled by writing value 55 HEX to the Trimming control Register (EE/6E HEX ). The default register value after power on is 00 HEX . Next the data can be written to the EEPROM memory one byte (8-bit) at a time. It is necessary to have a delay of minimum 16ms after programming each byte (8-bit). The success of each write can be verified by reading back the data (8-bit) and comparing it to the original byte (8-bit). Addition ally it is also possible to check the EEPROM status register (ED/6D HEX ) value after each read back. The EEPROM status register value should be 00 HEX when the read EEPROM data byte is free of errors. After all data bytes are written the EEPROM memory can be protected from write by writing HEX to the Trimming control Register (EE/6E HEX ). See table 1 showing the MAS6512 register and EEPROM data addresses.

result when the A/D conversion has finished. goes high when the A/D conversion has finished. Table 10. MAS6512 device address (EC/ED while SCL is constantly high. bytes transmitted per transfer is unrestricted. Figure 4. I or a repeated Start (Sr) bit to start a new transfe r.

Table 11. MAS6512 I2C bus write sequence bits table 10) is sent followed by an Acknowledge (A). internal oscillator runs only during conversion. Table 12. MAS6512 I2C bus single register (address Ax) read sequence bits Table 13. MAS6512 I2C bus MSB (first) and LSB (second) A/D conversion result read sequence

Figure 5 illustrates write access communication. communication the MISO line is high impedance. Figure 5. SPI Protocol – Write Access (register address MSB b it A7=0) Figure 6 illustrates read access communication. from following register addresses. Figure 6. SPI Protocol – Read Access (register address MSB bi t A7=1)

DA6512.000 19 (26) TRIMMING FOR SENSOR CAPACITANCE MAS6512 has two capacitance measurement modes and a temperature measurement mode. In capacitance measurement mode the output can be proportional either to capacitance difference (C S-CR) or to capacitance ratio (C S-CR)/C S. In temperature measurement mode the output is proportional to absolute temperature. For trimming it is necessary to know the sensor capacitance C S range C S MIN …C S MAX . For optimal utilization of the MAS6512AA1 input range the trimming is based on selecting the minimum linear range capacitance same as C S MIN and maximum linear range capacitance same as C S MAX . At the linear range minimum and maximum limits the average of the ∆Σ -modulator output is 10% and 90% respectively. In the following trimming equations we denote these by D MIN = 0.1 DMAX = 0.9 MAS6512 in capacitance difference mode The reference capacitor value C R is calculated from C R = [CS MIN *(D MAX -0.5)-CS MAX *(D MIN -0.5)] / (D MAX -DMIN ) If an external C R is used, it is connected between pins CR and CC. If an internal CR is used, the trim code for C R is calculated from REG E4HEX = (CR/C R MAX )*255 where C R MAX is nominally 22pF, but subject to ±10 % (±3 sigma) process variation. The reference voltage, V S, can be calculated using the following equation: V S = [144mV*(D MAX -DMIN )*2*C REF ] / (C S MAX -CS MIN ) where C REF is nominally 6 pF, but also has ±10 % variation. The gain register trim value is calculated from REG E5HEX = [(VS-33 mV) / 734mV]*255 REG E4HEX and REG E5HEX are 8-bit values, so they range from 0 to 255. Whe n their values are found, the same values can be written to corresponding EEPROM addre sses C4 HEX and C5 HEX . However, with SPI bus, the address MSB in write operation is 0, so the addresses are actually 44 HEX and 45 HEX . Example: Single capacitance sensor C S MIN =8pF CS MAX =12pF C REG E4HEX = (10pF/22pF)*255 = 115.9 ~ 116 V REG E5HEX = [(345.6-33 mV) / 734mV]*255 = 108.6 ~109 REG E3HEX = 0 (no internal C S capacitor matrix used)

DA6512.000 20 (26) TRIMMING FOR SENSOR CAPACITANCE MAS6512 in capacitance ratio mode The reference capacitor C R is calculated from C R = [CS MIN *C S MAX *(D MAX -DMIN )] / (C S MAX *D MAX -CS MIN *D MIN ) If an external C R is used, it is connected between pins CR and CC. If an internal C R is used, the trim code for C R is calculated from REG E4HEX = (CR/C R MAX )*255 where C R MAX is nominally 22pF, but subject to ±10 % (±3 sigma) process variation. The reference voltage, V S, can be calculated using the following equation: V S = 100.8mV * (C S MAX -CS MIN ) / (C S MAX *D MAX -CS MIN *D MIN ) The gain register trim value is calculated from REG E5HEX = (VS / 133.3mV)*255 REG E4HEX and REG E5HEX are 8-bit values, so they range from 0 to 255. Whe n their values are found, the same values can be written to corresponding EEPROM addre sses C4 HEX and C5 HEX . However, with SPI bus, the address MSB in write operation is 0, so the addresses are actually 44 HEX and 45 HEX . Example: Single capacitance sensor C S MIN =8pF CS MAX =12pF C REG E4HEX = (7.68pF/22pF)*255 = 89.0 ~ 89 V S = 100.8mV*)/(12pF-8pF)/(12pF*0.9-8pF*0.1)=40.32mV REG E5HEX = (40.32mV/133.3mV)*255 = 77.1 ~ 77 REG E3HEX = 0 (no internal C S capacitor matrix used)

DA6512.000 21 (26)

APPLICATION INFORMATION

Figure 7. MAS6512 configured for I2C bus communication Note: MAS6512 has an effective ESD clamp protection structure that can be triggered if the VDD rises too fast. nonlinearities cannot be removed by averaging. conditions. The XCLR pin can be left unconnected if not used. It has internal pull up to VDD.

DA6512.000 22 (26) MAS6512 IN QFN-16 4x4x0.75 PACKAGE EOC 16 TEST1 15 TEST2 14 OSCOUT 13 8 VREG

7 XCLR

6 SCL_SCLK

5 SDA_MOSI

12 GND

Top Marking Information: MAS6512 = Product Number, AA1 = Version Number YYWW = Year Week XXXXX = Lot Number QFN-16 4x4x0.75 PIN DESCRIPTION Pin Name Pin Type Function XCS 1 DI Chip Select (SPI) XSPI 2 DI SPI / I2C Bus Selection SPI: XSPI=low I2C: XSPI=high MISO 3 DO Master Input Slave Output (SPI) VDD 4 P Power Supply Voltage SDA_MOSI 5 DI/O Serial Bus Data (I2C) Master Output Salve Input (SPI) SCL_SCLK 6 DI Serial Bus Clock (I2C / SPI) XCLR 7 DI Master Reset VREG 8 AO Voltage Regulator Output 1.8V CR 9 AI Reference Capacitance Pin CC 10 AI Common Capacitance Pin CS 11 AI Sensing Capacitance Pin GND 12 G Power Supply Ground OSCOUT 13 DI/DO Oscillator Output TEST2 14 AI/O Test pin 2 TEST1 15 DO Test pin 1 EOC 16 DO End of Conversion P = Power, G = Ground, DO = Digital Output, , DI = Digital Input, AO = Analog Output, AI = Analog Input

DA6512.000 23 (26) D/2 E/2 SEATING PLANE SIDE VIEW TOP VIEW D2/2 E2/2 b BOTTOM VIEW D PIN 1 MARK AREA A EXPOSED PAD SHAPE OF PIN #1 IDENTIFICATION IS OPTIONAL L DETAIL A Terminal Tip Package Center Line X or Y e e/2 DETAIL A PACKAGE (QFN-16 4X4x0.75) OUTLINE Symbol Min Nom Max Unit PACKAGE DIMENSIONS A 0.700 0.750 0.800 mm A1 0.000 0.020 0.050 mm A3 0.203 REF mm b 0.250 --- 0.350 mm D 3.950 4.000 4.050 mm D2 (Exposed.pad) 2.700 --- 2.900 mm E 3.950 4.000 4.050 mm E2 (Exposed.pad) 2.700 --- 2.900 mm e 0.650 BSC mm L 0.350 --- 0.450 mm Dimensions do not include mold or interlead flash, protrusions or gate burrs.

DA6512.000 24 (26) User Direction of Feed W PO P1 D0 X X E F T K0R 0.25 typ SOLDERING INFORMATION N For Lead-Free / Green QFN 4mm x 4mm Resistance to Soldering Heat According to RSH test IEC 68-2-58/20 Maximum Temperature 260 °C Maximum Number of Reflow Cycles 3 Reflow profile Thermal profile parameters stated in IPC/JEDEC J-STD-020 should not be exceeded. http://www.jedec.org Lead Finish Solder plate 7.62 - 25.4 µm, material Matte Tin EMBOSSED TAPE SPECIFICATIONS Orientation on tape Dimension Min/Max Unit Ao 4.30 ±0.10 mm Bo 4.30 ±0.10 mm E 1.75 mm F 5.50 ±0.05 mm Ko 1.10 ±0.10 mm Po 4.0 mm P1 8.0 ±0.10 mm P2 2.0 ±0.05 mm T 0.3 ±0.05 mm W 12.00 ±0.3 mm All dimensions in millimeters

DA6512.000 25 (26) DA B C N Tape Slot for Tape Start Components Trailer Leader Carrier Tape Cover Tape Start End REEL SPECIFICATIONS Dimension Min Max Unit A 330 mm B 1.5 mm C 12.80 13.50 mm D 20.2 mm N 100 mm W1 (measured at hub) 12.4 14.4 mm W2 (measured at hub) 18.4 mm Trailer 160 mm Leader 390, of which minimum 160 mm of empty carrier tape sealed with cover tape mm Reel Material: Conductive, Plastic Antistatic or Static Dissipative Carrier Tape Material: Conductive Cover Tape Material: Static Dissipative

DA6512.000 26 (26)

ORDERING INFORMATION

Product Code Product Description MAS6512AA1WAD00 Capacitive Sensor Signal Interface IC EWS-tested wafer, thickness 370 µm MAS6512AA1WAD05 Capacitive Sensor Signal Interface IC Dies on waffle pack, thickness 370 µm MAS6512AA1Q1706 Capacitive Sensor Signal Interface IC QFN-16 4x4x0.75 Package, Pb-free, RoHS compliant, Tape & Reel, 1000 / 3000 pcs components on reel Contact Micro Analog Systems Oy for other wafer thickness options. LOCAL DISTRIBUTOR MICRO ANALOG SYSTEMS OY CONTACTS Micro Analog Systems Oy Kutomotie 16 FI-00380 Helsinki, FINLAND Tel. +358 10 835 1100 Fax +358 10 835 1119 http://www.mas-oy.com NOTICE Micro Analog Systems Oy (MAS) reserves the right to make changes to the products contained in this data sheet in order to improve the design or performance and to supply the best possible products. MAS assumes no responsibility for the use of any circuits shown in this data sheet, conveys no license under any patent or other rights unless otherwise specified in this data sheet, and makes no claim that the circuits are free from patent infringement. Applications for any devices shown in this data sheet are for illustration only and MAS makes no claim or warranty that such applications will be suitable for the use specified without further testing or modification. MAS products are not authorized for use in safety-critical applications (such as life support) where a failure of the MAS product would reasonably be expected to cause severe personal injury or death. Buyers represent that they have all necessary expertise in the safety and regulatory ramifications of their applications, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety- related requirements concerning their products and any use of MAS products in such safety-critical applications, notwithstanding any applications-related information or support that may be provided by MAS. Further, Buyers must fully indemnify MAS and its representatives against any damages arising out of the use of MAS products in such safety-critical applications. MAS products are neither designed nor intended for use in military/aerospace applications or environments. Buyers acknowledge and agree that any such use of MAS products which MAS has not designated as military-grade is solely at the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. MAS products are neither designed nor intended for use in automotive applications or environments. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, MAS will not be responsible for any failure to meet such requirements.