M8550 HTSEMI | Alldatasheet
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Technical content
TRANSISTOR(PNP)
FEATURES
MARKING: Y21 MAXIMUM RATINGS (T A =25 unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage -40 V V CEO Collector-Emitter Voltage -25 V V EBO Emitter-Base Voltage -6 V I C Collector Current -Continuous - 0.8 A P C Collector power dissipation 200 mW T j Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) P a r a m e t e r Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR) CBO I C = -100μA , I E =0 -40 V Collector-emitter breakdown voltage V(BR) CEO C = -1mA , I B =0 -25 V Emitter-base breakdown voltage V(BR) EBO I E = -100μA, I C =0 -6 V Collector cut-off current I CBO V CB = -35V , I E =0 -0.1 μA Collector cut-off current I CEO V CE = -20V , I B =0 -0.1 μA h FE(1) V CE =-1V, I C =-5mA 45 h FE(2) V CE =-1V, I C =-100mA 85 300 DC current gain h FE(3) V CE =-1V, I C =-800mA 40 Collector-emitter saturation voltage V CE(sat) I C = -800mA, I B =-80mA -0.5 V Base-emitter saturation voltage V BE(sat) I C =-800mA, I B =-80mA -1.2 V Transition frequency f T V CE =-6V, I C = -20mA f=30MHz
150 MHz
- Pulse Test :pulse width ≤ 300µs , duty cycle ≤2%. CLASSIFICATION OF h FE(2) Rank L H Range 85-200 200-300 SOT-23 BASE EMITTER COLLECTOR M8 550 Date:2011/05 www.htsemi.comsemiconductor JinYu
Date:2011/05 www.htsemi.comsemiconductor JinYu