M8050 HTSEMI | Alldatasheet
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Technical content
TRANSISTOR(NPN)
FEATURES
MARKING: Y11 MAXIMUM RATINGS (T A =25 unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage 40 V V CEO Collector-Emitter Voltage 25 V V EBO Emitter-Base Voltage 6 V I C Collector Current -Continuous 0.8 A P C Collector Power Dissipation 0.2 W T j Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) P a r a m e t e r Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR) CBO I C = 100μA, I E =0 40 V Collector-emitter breakdown voltage V(BR) CEO C =1mA , I B =0 25 V Emitter-base breakdown voltage V(BR) EBO I E = 100μA, I C =0 6 V Collector cut-off current I CBO V CB = 35V, I E =0 0.1 μA Collector cut-off current I CEO V CE = 20V, I B =0 0.1 μA h FE(1) V CE =1V, I C = 5 m A 4 5 h FE(2) V CE =1V, I C =100mA 80 300 DC current gain h FE V CE =1V, I C =800mA 40 Collector-emitter saturation voltage V CE(sat) I C = 800mA, I B =80mA 0.5 V Base-emitter saturation voltage V BE(sat) I C =800mA, I B = 80mA 1.2 V Transition frequency f T V CE =6V, I C = 20mA , f=30MHz
150 MHz
- Pulse Test : pulse width ≤ 300µs , duty cycle ≤2%. CLASSIFICATION OF h FE(2) Rank L H Range 80-200 200-300 SOT-23 BASE EMITTER COLLECTOR M8050 Date:2011/05 www.htsemi.comsemiconductor JinYu
Date:2011/05 www.htsemi.comsemiconductor JinYu