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D T O P G S D B A C K S G WBFBP-03A Plastic-Encapsulate MOSFETS MOSFET( N-Channel )
DESCRIPTION
High cell density, DMOS technology. These products have been designed to minimize on-state resistance while provi de rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
FEATURES
High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability APPLICATION N-Channel Enhancement Mode Field Effect Transistor For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING: 72 D G S MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source Voltage 60 V VGSS Gate-Source Voltage - Continuous ±20 V ID Maximum Drain Current - Pulsed 115 mA PD Power Dissipation 150 mW RθJA Thermal Resistance from Junction to Ambient 833 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ WBFBP-03A (1.6×1.6×0.5) unit: mm 1. GATE 2. SOURCE 3. DRAIN 2012-0 WILLAS ELECTRONIC CORP. M7002TTD03
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) P a r a m e t e r Symbol Test conditions Min Typ Max Unit VGS=0V,ID=10μA 60 Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=3mA 60 Gate-Threshold Voltage* V(GS)th V DS=VGS, ID=250μA 1 V Gate-Body Leakage lGSS V DS=0V, VGS=±25V ±100 nA VDS=60V, VGS=0V 1 Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V,Tj=125℃ 500 μA On-state Drain Current* ID(ON) V GS=10V, VDS=7V 500 mA VGS=10V, ID=500mA 1 7.2 Drain-Source On-Resistance* RDS(on) VGS=5V, ID=50mA 1 7.2 Ω VGS=10V, ID=500mA 3.75 Drain-Source On- Voltage * VDS(on) VGS=5V, ID=50mA 0.375 V Forward Tranconductance* gfs V DS=10V, ID=200mA 80 ms Diode Forward Voltage VSD I S=115mA, VGS=0V 1.2 V Input Capacitance Ciss 50 Output Capacitance Coss 25 Reverse Transfer Capacitance Crss VDS=25V, VGS=0V,f=1MHz pF Total Gate Charge Qg 1 Gate-Source Charge Qgs 25 Gate-Drain Charge Qd VDS =30V, VGS =10V, ID=250mA nC *Pulse test , pulse width≤300μs, duty cycle≤2% . SWITCHING TIME Turn-on Time td(on) 20 Turn-off Time td(off) VDD=25V,RG=25Ω ID=500mA,VGEN=10V RL=50Ω ns 2012-0 WILLAS ELECTRONIC CORP. M7002TTD03WBFBP-03A Plastic-Encapsulate MOSFETS