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Features

x Epitaxial Planar Die Construction x Complementary NPN Types Available x Built-In Biasing Resistors Absolute maximum ratings @ 25к Symbol Parameter Min Typ Max Unit IC Collector current --- 100 --- mA VIN Input voltage -5 --- +10 V Pd Power dissipation --- 200 --- mW Tj Junction temperature --- 150 --- ć Tstg Storage temperature -55 --- 150 ć Electrical Characteristics @ 25к Symbol Parameter Min Typ Max Unit VI(off) --- ---0.3 V VI(on) Input voltage (VCC=5V, IO=100­A) (VO=0.3V, IO=20mA) 3.0--- --- V VO(on) Output voltage (I O=10mA,Ii=0.5mA) --- --- 0.3 V II Input current (V I=5V) --- --- 7.2 mA IO(off) Output current (V CC=50V, VI=0) --- --- 0.5 ­A GI DC current gain (V O=5V, IO=5mA) 33 --- --- R1 Input resistance 0.7 1.0 1.3 K¡ R2/R1 Resistance ratio 8 10 12 fT Transition frequency (VO =10V, IO=5mA, f=100MHz) --- 250 --- MHz 1.90 0.70 0.90 0.65 0.65 SOT-323 Suggested Solder Pad Layout x Marking: E21

  • Epoxy meets UL 94 V-0 flammability rating
  • Moisure Sensitivity Level 1 mm NPN Digital Transistor 2012-0 WILLAS ELECTRONIC CORP. DTC113ZUA Dimensions in inches and (millimeters) .056(1.40) .047(1.20) .096(2.45) .078(2.00) .004(0.10)MIN. .010(0.25) .003(0.08) .043(1.10) .032(0.80) .016(0.40) .008(0.20) .004(0.10)MAX. .087(2.20) .070(1.80) .054(1.35) .045(1.15)

2012-0 WILLAS ELECTRONIC CORP. NPN Digital Transistor DTC113ZUA 0.1 1 10 100 100 1000 10 100 100 1000 048 1 2 1 6 2 0 0.1 1 10 100 100 1000 0 500 1000 1500 0.01 0.1 100 0 25 50 75 100 125 150 100 150 200 250 300 350 400 300 3030.3 OFF CharacteristicsON Characteristics Ta=25℃ 100℃ VO=0.3V INPUT VOLTAGE VI(ON) (mV) OUTPUT CURRENT IO (mA) 5000 VO(ON) —— I O Ta=100℃ 25℃ IO/II=20 OUTPUT VOLTAGE VO(ON) (mV) OUTPUT CURRENT IO (mA) f=1MHz Ta=25℃ CO —— V R OUTPUT CAPACITANCE CO (pF) REVERSE BIAS VOLTAGE VR (V) GI —— I O Ta=100℃ 25℃ VO=5V DC CURRENT GAIN GI OUTPUT CURRENT IO (mA) Ta=100℃ 25℃ VCC=5V OUTPUT CURRENT IO (mA) INPUT VOLTAGE VI(OFF) (mV) PD —— T a DTC113ZUA POWER DISSIPATION PD (mW) AMBIENT TEMPERATURE Ta ( )℃ Typical Characteristics