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Technical content

C,Mar,2012 Digital Transistors (Built-in Resistors) DTC114EM/DTC114EE/DTC114EUA DTC114EKA /DTC114ECA/DTC114ESA

  • Equivalent Circuit DIGITAL TRANSISTOR (NPN)

FEATURES

 Built-in bias resistors enable the c onfiguration of an inverter circuit without connecting external input resistors(see equivalent circuit)  The bias resistors consist of thin-f ilm resistors with complete isolation to allow positive biasing of the input.They also have the advantage of almost completely eliminating parasitic effects  Only the on/off conditions need to be se t for operation, making device design easy PIN CONNENCTIONS and MARKING DTC114EM SOT-723 1. IN 2. GND 3. OUT MARKING:24 DTC114EE SOT-523 1. IN 2. GND 3. OUT MARKING:24 DTC114EUA SOT-323 1. IN 2. GND 3. OUT MARKING:24 D T C 1 1 4 E K A S O T - 2 3 - 3 L 1. IN 2. GND 3. OUT MARKING:24 D T C 1 1 4 E C A S O T - 2 3 1. IN 2. GND 3. OUT MARKING:24 D T C 1 1 4 E S A T O - 9 2 S 1. GND 2. OUT 3. IN 2012-05 WILLAS ELECTRONIC CORP.

C,Mar,2012 MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Limits(DTC114E□) Symbol Parameter M E UA KA CA SA Unit VCC Supply Voltage 50 V VIN Input Voltage -10～+40 V IO Output Current 50 mA ICM Peak Collector Current 100 mA PD Power Dissipation 100 150 200 300 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Conditions Min Typ Max Unit VI(off) V CC=5V,IO=100µA 0.5 V Input voltage VI(on) V O=0.3V,IO=10mA 3 V Output voltage VO(on) I O/II=10mA/0.5mA 0.3 V Input current II V I=5V 0.88 mA Output current IO(off) V CC=50V,VI=0 0.5 μA DC current gain GI V O=5V,IO=5mA 30 Input resistance R1 7 10 13 k Ω Resistance ratio R2/R1 0.8 1 1.2 Transition frequency fT V O=10V,IO=5mA,f=100MHz 250 MHz 2012-05 WILLAS ELECTRONIC CORP.

0.1 1 10 100 0.1 100 11 0 1 00 0.01 0.1 048 1 2 1 6 2 0 0.1 1 10 100 100 1000 0.01 0.1 0 25 50 75 100 125 150 100 150 200 250 300 350 400 303 0.03 0.3 300 3030.3 0.03 0.3 300.3 3 0.3 OFF CharacteristicsON Characteristics Ta=25℃ 100℃ VO=0.3V INPUT VOLTAGE VI(ON) (V) OUTPUT CURRENT IO (mA) VO(ON) —— I O Ta=100℃ 25℃ IO/II=20 OUTPUT VOLTAGE VO(ON) (V) OUTPUT CURRENT IO (mA) f=1MHz Ta=25℃ CO —— V R OUTPUT CAPACITANCE CO (pF) REVERSE BIAS VOLTAGE VR (V) GI —— I O Ta=100℃ 25℃ VO=5V DC CURRENT GAIN GI OUTPUT CURRENT IO (mA) Ta=100℃ 25℃ VCC=5V OUTPUT CURRENT IO (mA) INPUT VOLTAGE VI(OFF) (V) DTC114EXXTypical Characteristics PD —— T a DTC114ESA DTC114EUA/KA/CA DTC114EE DTC114EM POWER DISSIPATION PD (mW) AMBIENT TEMPERATURE Ta ( )℃ 2012-05 WILLAS ELECTRONIC CORP.