M28S HTSEMI | Alldatasheet
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TRANSISTOR(NPN)
FEATURES
Excellent hFE Linearity High DC Current Gain MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 6 V IC Collector Current 1 A PC Collector Power Dissipation 200 mW RΘJA Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=0.1mA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA, IC=0 6 V Collector cut-off current ICBO VCB=35V, IE=0 0.1 µA Collector cut-off current ICEO VCE=20V, IB=0 5 µA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 µA hFE(1) VCE=1V, IC=1mA 290 hFE(2) VCE=1V, IC=100mA 300 1000 hFE(3) VCE=1V, IC=300mA 300 DC current gain hFE(4) VCE=1V, IC=500mA 300 Collector-emitter saturation voltage VCE(sat) IC=600mA, IB=20mA 0.55 V Transition frequency fT VCE=10V,IE=50mA, f=1MHz 100 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 9 pF CLASSIFICATION OF hFE(2) RANK B C D RANGE 300–550 500–700 650–1000 MARKING 28S SOT–23 1. BASE 2. EMITTER 3. COLLECTOR M28 S Date:2011/05 www.htsemi.comsemiconductor JinYu