M28S HOTTECH | Alldatasheet
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Page:P2-P1 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FE A TURES Excellent HFE Linearity. High DC current gain Marking : 28S MAXIMUM RA TINGS (TA=25 unless otherwise noted) Parameter Symbol V alue Unit Collector-Base V oltage V CBO 40 V D Collector-EmitterV oltage V CEO 20 V Emitter-Base V oltage V EBO 6 V Collector Current-Continuous IC 1000 m A Collector Pow er Dissipation PC 200 m W Junction Temperature TJ 150 StorageTemp erature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Testconditions M in Typ M ax U nit Collector-base breakdow n voltage V CBO IC =100μA,IE=0 40 V Collector-em itter breakdown voltage V CEO IC =1mA,I B =0 20 V Emitter-base breakdow n voltage V EBO IE=100μA,IC =0 6 V Collector cut-offcurrent ICBO V C B =35V ,IE=0 0.1 μA Emitter cut-off current IEBO V EB =5V ,IC =0 0.1 μA DC currentgain hFE V C E=1V,IC =1mA V C E=1V,IC =0.1A V C E=1V,IC =0.3A V C E=1V,IC =0.5A 290 300 300 300 1000 C ollector-em ittersaturation voltage V CE(sat) IC =600mA, IB =20mA 0.55 V Transition frequency fT V C E=10V, IC =50mA 100 MHz Collector outputcapacitance C ob V C B =10V,IE=0,f=1MHz 9 pF CLASSIFICA TION OF hFE Rank B C D Range 300-550 500-700 650-1000 (NPN ) 1. BASE 2. EMITTER SOT -23 3. COLLECTO M28S
Page:P2-P2 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Typical Characteristics 0.1 100 1000 11 0 1 0 0 100 1000 0 25 50 75 100 125 150 100 150 200 250 1 10 100 1000 100 1000 0.1 1 10 100 1000 1 10 100 1000 100 1000 012345 100 120 140 160 1 10 100 1000 100 1000 V CE =1V COLLCETOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (V) I C V BE Ta=100 Ta=25 I C f T TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I V CE =10V Ta=25 COLLECTOR POWER DISSIPATION P C (mW) AMBIENT TEMPERATURE T P C —— T a COLLECTOR CURRENT I C (mA) BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) I C V BEsat β=30 Ta=100 Ta=25 2000 Cob Cib CAPACITANCE C (pF) REVERSE VOLTAGE V (V) V CB / V EB C ob / C ib f=1MHz I E =0/I C Ta=25 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) Ta=100 Ta=25 V CE =1V I C h FE 2000 200uA 180uA 160uA 140uA 120uA 100uA 80uA 60uA 40uA I B =20uA COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) Static Characteristic COMMON EMITTER Ta=25 β=30 Ta=100 Ta=25 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) I C V CEsat M28S