LTA014EMT2L ZHAOXINGWEI | Alldatasheet
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PNP Epitaxial Planar Silicon Transistor (Resistor Built-In Typ.) Built-In Bias Resistors Enable The Configuration of An Inverter Circuit Without Connecting External Input Resistors (See Equivalent Circuit). Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit V I(off) V CC =- 5 V,I O = -100 A -0.5 V I(on) V O = -0.3V , I O = -10mA -3 Output Voltage V O(on) I O I Input Current I I V I =- 5 V - 0 . 8 8 m A Output Current I O(off) V CC = -50V , V I =0 V - 0 . 5 A DC Current Gain G I V O =- 5 V,I O =- 5 m A 3 0 Input Resistance R 71 0 1 3 k Resistance Ratio R 0.8 1 1.2 Transistion Frequency f T CE = -10V , I E = 5mA , f = 100MHz 250 MHz * Characteristics of built-in transistor Input Voltage V Digital Transistors Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Supply Voltage V CC -50 V Input Voltage V IN - 4 0t o+ 1 0 V I O -50 I C(Max) -100 Power Dissipation P D 150 mW Junction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0 Output Current mA LTA014EMT2L
Electrical Characteristics Curves Equivalent Circuit LTA014EMT2L