LT0H12M SHARP | Alldatasheet

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Hologram Laser(1 beam) for Magneto-Optical disk TEC N 940525 LT0H12M n Features (1) Maximum optical output: 35mW (2) Pickups reduced in size and weight on request (3) The housing of pickups shifted from aluminum die-cast to formed resin on request (reducing the weight to 1/3) (4) Since its semiconductor laser, signal detection photocell, and circuit array are assembled in a package, the optical pickup is simple in assembling and adjustment n Applications (1) Magneto-optical disk drives (2) CD-Rs n Outline Dimensions Hologram Laser *2 Case temperature *3 At the position of 1.6mm from the bottom face of resin package. *1 Output power from LD chip n Absolute Maximum Ratings Parameter Ratings Units Optical power output*1 P O 35 mW Laser 2Reverse voltage Monitor photodiode V R 30 V Photodiode for signal detection 15 Operating temperature*2 Topr -10 to +50 Storage temperature *2 Tstg -40 to +85 ˚C Soldering temperature *3 Tsol 260(5s or less) Symbol 7912

10 GD 1D 2D 3D 4

1.0 0.4 45˚ 2 9 allowance = –0.2mm φ4.9 45˚ X Y Hologram glass Cap glass LD chip Reference surface φ 9.0 7.6 10 - φ 0.45 Z 6.6 3.6 (Notice)

  • In the absence of device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
  • Specifications are subject to change without notice for improvement. Laser diode [Terminal connection] φ φ (Unit: mm)

λ=780nm R L=180Ω V R =15VInput Output *6 Measuring method is shown below *1 Output power form LD chip *2 Oscillation mode, transverse single mode *3 An angle for 50% of the peak intensity (full angle at half maximum). *4 Values in each element. Elements other than subject elements shall be measured while the anode and the cathode are short-circuited to each other *5 Illumination intensity by CIE standard light (Tungsten lamp) n Electro-optical Characteristics Parameter Symbol Condition MIN TYP MAX Units Threshold current Ith - - 60 80 mA Operating current Iop - 115 150 mA Operating voltage Vop P o =30mW *1 - 1.85 2.2 V Wavelength *2 λp 770 780 795 nm Monitor current Im P o =30mW *1 ,V R =15V 0.1 0.3 2 mA Angle Parallel 8 9.5 13 ˚ Laser Radiation Characteristics*3 Perpen- dicular 20. 26 32 ˚ (without hologram glass) Ripple P O =30mW *1 -20 - 20 % -2 - 2 ˚Emission Point accuracy Angle -3 - 3 ˚ Positon - -80 - 80 µm 20mW Differentioal efficiencyη Iop(30mW) - Iop(10mW) 0.3 0.55 0.8 mW/mA Sensitivity S - 10 - µA/mWMonitor Photodiode Dark current I D V R =15V - - 150 nA Terminal capacitance Ct - 8 - pF Reverse voltage V R IR =10µA1 5 - - V Dark current I d V R =15V - - 20 nA 0.6 2.8 5Photodiode Terminal capacitanceCt V R =15V,f=1MH Z 0.8 3 5.4 pF for signal detection 85 170 270Short circuit current *4Isc Ev=1000Lx *5 260 460 670 nA Response time *6 tr,tf V R =15V,R L=180Ω - 10 140 ns A,B A,B A B A B A,B D2 D3 D4D1 Input Output 90% 10% tr tf 50% θ// Δφ // Δφ ⊥ ΔX ,Y,Z LT0H12M (Tc=25˚C) Segment No. *7 Applicabledivisions correspond to pattern segment No.

*1 Measuring method is shown below. Measuring method of electro-optical characteristics MO Disk Laser Driver HL C.L. Actuator O.L NA=0.35 f=6.0mm NA=0.5 f=3.45mm * Distance between C.L-O.L: 27mm C.L: Collimator lens O.L: Objective lens (Tc=25˚C) Parameter Condition MIN TYP MAX Units Focus error signal offsetting *2 -20 -12 -4 % Lead-in for focus error signal *3 - 90 - µm Radial offsetting *4 -10 - 10 % FES Output amplitude *5 Laser output 4.2mW 2.4 3.9 5.0 µA p-p RES Output amplitude *5 2.5 3.3 4.1 µA p-p n Electro-optical Characteristics *1 TEC N 940525 *2 FES output (a)/FESp-p at Maximum point of the FES output amplitude FESp-pa GND a b GND *4 ( a - b ) / 2 ( a + b ) *5 Values at 4.2mW of the laser output Both FES output amplitude (D2-D3) and RES output amplitude (D1-D4) are p-p values at focusing oscillation GND a b