LSP01 ZHAOXINGWEI | Alldatasheet
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RoH Lead (Pb)-Free Version is RoHS Compliant. 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector Unit: mm SOT-23 0.1 +0.05 -0.01 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage V DS V Gate-Source Voltage V GS V Continuous Drain Current (T J =150 )* 2T A =25 A =70 I D -2.4 -1.9 -2.2 -1.8 A Pulsed Drain Current *1 I DM A Continuous Source Current (diode conduction) *2 I S -0.72 -0.6 A Power Dissipation *2 T A =25 A =70 P D 0.9 0.57 0.7 0.45 W Jumction Temperature T j Storage Temperature T stg * 1. Pulse width limited by maximum junction temperature. * 2. Surface Mounted on FR4 Board, t 5s e c . - 5 5t o+ 1 5 0 -20 -10 150 Thermal Resistance Ratings Ta = 25 Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient *1 120 145 Maximum Junction-to-Ambient *2 140 175 * 1. Surface Mounted on FR4 Board, t 5s e c . * 2. Surface Mounted on FR4 Board. R thJA P-Channel 2.5-V (G-S) MOSFET LSP01
Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain-Source Breakdown Voltage V (BR)DSS V GS =0V ,I D = -250 ìA -20 Gate Threshold Voltage V GS(th) V DS GS D Gate-Body Leakage I GSS V DS =0V ,V GS 100 nA V DS =- 2 0V ,V GS =0V - 1 V DS =- 2 0V ,V GS =0V ,T J =5 5 -10 V DS -5 V, V GS =- 4 . 5V -6 V DS -5 V, V GS =- 2 . 5V -3 V GS =- 4 . 5V ,I D = -2.8 A 0.08 0.1 V GS =- 2 . 5V ,I D = -2.0 A 0.11 0.15 Forward Transconductance * g fs V DS =- 5V ,I D = -2.8 A 6.5 S Diode Forward Voltage * V SD I S = -0.75 A, V GS = 0 V -0.8 -1.2 V Total Gate Charge Q g 4.5 10 Gate-Source Charge Q gs 0.7 Gate-Drain Charge Q gd 1.1 Input Capacitance C iss 375 Output Capacitance C oss Reverse Transfer Capacitance C rss t d(on) 20 30 t r 40 60 t d(off) 30 45 t f 20 30 * Pulse test: PW 300 ìs duty cycle 2%. V Turn-Off Time Turn-On Time On-State Drain Current I D(on) Zero Gate Voltage Drain Current I DSS A Drain-Source On-State Resistance * r DS(on) A ns V DS =- 6 V, V GS =- 4 . 5V,I D =- 2 . 8A V DS =- 6 V, V GS =0,f=1M H z V DD =- 6 V,R L =6 Ù, I D =- 1 A,V GEN =- 4.5V , R G =6 Ù pF nC LSP01