LPW5213 POWER | Alldatasheet

Document overview

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Technical content

Features

 75mΩ Low RDS(ON), High-side N-MOSFET  2.5V to 6V Input Voltage  Low Quiescent Current:30uA  Soft Start Function  Built-In Short-Circuit Protection  Built-in Thermal Protection  RoHS Compliant and 100% Lead(Pb)-Free Typical Application Circuit NC VoutVIN BAT COV 1uF EN CIN 1uF 2/5GNDOFF ON VIN Marking Information Device Marking Package Shipping LPW5213B6F SOT23-6 3K/REEL Marking indication: Y:Production year W:Production week X:Production batch.

LPW5213-00 May.-2018 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 2 of 5 Preliminary Datasheet LPW5213 Functional Pin Description Package Type Pin Configurations SOT23-6

4 OUT

5 GND

1 EN Device Enable (active High). 2/5 GND Ground. 3 VIN Input pin. 4 OUT Output pin. 6 NC No Connector. Absolute Maximum Ratings Note 1 Note 1. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Thermal Information ESD Susceptibility

LPW5213-00 May.-2018 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 3 of 5 Preliminary Datasheet LPW5213

Electrical Characteristics

(Over recommended operating conditions unless specified otherwise, TA=25℃ ) Symbol Parameter Condition Min Typ Max Units VIN Input Voltage 2.5 6 V IOUT Output Current 3 A RDS(ON) Output N-MOSFET RDS(ON) 75 mΩ IQ Quiescent Current VIN=3V 30 50 µA ISHDN Shutdown Current VEN=GND 1 µA VEN(L) Enable Threshold Low 0.4 V VEN(H) Enable Threshold High 1.4 V IEN Input High Current VIN=VEN=5.0V 5 µA

LPW5213-00 May.-2018 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 4 of 5 Preliminary Datasheet LPW5213

Application Information

The LPW5213 are single N -Channel MOSFET high-side power switches with active -high enable input, optimized for self -powered and bus -powered Universal Serial Bus applications. The LPW5209 equipped with a charge pump circuitry to drive the internal NMOS switch; the switch's low RDS(ON) 80mΩ. Input and Output VIN (input) is the power source connection to the internal circuitry and the drain of the MOSFET. VOUT (output) is the source of the MOSFET. In a typical application, current flows through the switch from VIN to VOUT toward the load. If VOUT is greater than VIN, current will flow from VOUT to VIN since the MOSFET is bidirectional when on. Unlike a normal MOSFET, there is no a par asitic body diode between drain and source of the MOSFET, the LPW5213 prevents reverse current flow if VOUT being externally forced to a higher voltage than VIN when the output disabled (VEN < 0.4V). Chip Enable Input The switch will be disabled when the EN pin is in a logic low condition. During this condition, the internal circuit is turned off, reducing the supply current to 0.1μA typical. The maximum guaranteed voltage for a logic low at the EN pin is 0. 4V. A minimum guaranteed voltage of 1.4V at the EN pin will turn the LPW5213 back on. Floating the input may cause unpredictable operation. EN should not be allowed to go negative with respect to GND. The EN pin may be directly tied to VIN to keep the part on. Thermal Shutdown Thermal shutdown is employed to protect the device from damage if the die temperature exceeds approximately 150°C. If enabled, the switch automatically restarts when the die temperature falls 20°C. The output will continue to cycle on and off until the device is disabled or the fault is removed.

LPW5213-00 May.-2018 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 5 of 5 Preliminary Datasheet LPW5213 Packaging Information SOT23-6