DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 7
Technical content
Features
2.5-5.5V operation 65dB PSRR at 217Hz, VDD=5V 0.1µA ultra low current shutdown mode Improved pop & click circuitry Unique Modulation Scheme Reduces EMI Emissions 0.1-µA Shutdown Current No output coupling capacitors, snubber networks or bootstrap capacitors required External gain configuration capability Shutdown Pin has 1.8V Compatible Thresholds BTL output can drive capacitive loads RoHS compliant and 100% lead(Pb)-free
Applications
PMP,PSP, Game, Data-Bank Cellular and Smart mobile phone Marking Information Part Package Marking MPQ LPA8003SOF SOP8 LPS LPA8003 YWXXX 100/T LPA8003SPF ESOP8 LPS LPA8003P YWXXX 100/T
Preliminary Datasheet LPA8003 L P A 8 0 0 3 – 0 0 V e r s i o n 1 . 0 D a t a s h e e t S e p . - 2 0 1 3 www.lowpowersemi.com P a g e 2 o f 7 Functional Pin Description Package Type Pin Configurations SOP8/ESOP8 Pin Description Pin No. Pin Name I/O DESCRIPTION
1 S H D N I The device enters in shutdown mode when a High level Voltage is applied on this pin
2 BYPASS I Bypass capacitor pin which provides the common mode voltage
3 +IN I Positive input of the first ampl ifier, receives the common mode voltage 4 -IN I Negative input of the first amplifier, receives the audio input signal. Connected to the 5 VO1 O Negative output of the LPA8003. Connected to the load and to the feedback resistor Rf 6 VDD I Analog VDD input supply. 7 GND Ground connection for circuitry. 8 VO2 O Positive output of the LPA8003. Absolute Maximum Ratings
Preliminary Datasheet LPA8003 L P A 8 0 0 3 – 0 0 V e r s i o n 1 . 0 D a t a s h e e t S e p . - 2 0 1 3 www.lowpowersemi.com P a g e 3 o f 7
Electrical Characteristics
Symbol Parameter Conditions LPA8003 UnitMin. Typ. Max. VOS Output offset voltage (measured differentially) Vi=0V ,Av=2V/V ,VDD=2.5V to 5.5V 5 25 mV PSRR Power supply rejection ration V DD=2.5V to 5.5V -70 -55 dB IQ Quiescent current VDD=5.5V , no load 5 mA VDD=3.6V , no load 4 VDD=2.5V , no load 3 PO Output Power VDD=5V ,THD=1%,F=1KHz,RL=4Ω 2.4 W VDD=5V ,THD=1%,F=1KHz,RL=8Ω 1.8 W VDD=5V ,THD=10%,F=1KHz,RL=4Ω 3.0 W VDD=5V ,THD=10%,F=1KHz,RL=8Ω 2.1 W ILIM P-Channel Current Limit 1.2 A RDS(ON) Static drain-source on-state resistance VDD=5.5V , no load 400 m VDD=3.6V , no load 500 VDD=2.5V , no load 700 THD+N Total harmonic distortion plus noise VDD=5V ,,Po=1W,RL=8 f=1KHz 0.123 % VDD=3.6V ,,Po=0.5W,RL=8 f=1KHz 0.130 VDD=2.5V ,,Po=0.2W,RL=8 f=1KHz 0.163 kSVR Supply ripple rejection ratio VDD=3.6V ,Inputs ac-grounded with Ci=2uF F=217Hz,Vripple)= 200mVpp -68 dB CMRR Common mode rejection ratio VDD=3.6V , Vic=1Vpp F=217Hz -58 dB Zt Start-up time from shutdown VDD=3.6V 45 mS
Preliminary Datasheet LPA8003 L P A 8 0 0 3 – 0 0 V e r s i o n 1 . 0 D a t a s h e e t S e p . - 2 0 1 3 www.lowpowersemi.com P a g e 4 o f 7 Typical Operating Characteristics
Preliminary Datasheet LPA8003 L P A 8 0 0 3 – 0 0 V e r s i o n 1 . 0 D a t a s h e e t S e p . - 2 0 1 3 www.lowpowersemi.com P a g e 5 o f 7 Layout Considerations As output power increases, interconnect resistance (PCB traces and wires) between the amplifier, load and power supply create a voltage drop. The voltage loss on the traces between the LPA8003 and the load results is lower output power and decreased efficiency. Higher trace resistance between the supply and the LPA8003 has the same effect as a poorly regulated supply, increase ripple on the supply line also reducing the peak output power. The effects of residual trace resistance increases as output current increases due to higher output power, decreased load impedance or both. To maintain the highest output voltage swing and corresponding peak output power, the PCB traces that connect the output pins to the load and the supply pins to the power supply should be as wide as possible to minimize trace resistance. The use of power and ground planes will give the best THD+N perform ance. While reducing trace resistance, the use of power planes also creates parasite capacitors that help to filter the power supply line. The inductive nature of the transducer load can also result in overshoot on one or both edges, clamped by the parasitic diodes to GND and VDD in each case. From an EMI stand- point, this is an aggressive waveform that can radiate or conduct to other components in the system and cause interference. It is essential to keep the power and output traces short and well shielded if possible. Use of ground planes, beads, and micro-strip layout techniques are all useful in preventing unwanted interference. As the distance from the LPA8003 and the speaker increase, the amount of EMI radiation will increase since the output wires or traces acting as antenna become more efficient with length. What is acceptable EMI is highly application specific. Ferrite chip inductors placed close to the LPA8003 may be needed to reduce EMI radiation. The value of the ferrite chip is very application specific. Ferrite chip inductors placed close to the LPA8003 may be needed to reduce EMI radiation. The value of the ferrite chip is very application specific.
Preliminary Datasheet LPA8003 L P A 8 0 0 3 – 0 0 V e r s i o n 1 . 0 D a t a s h e e t S e p . - 2 0 1 3 www.lowpowersemi.com P a g e 6 o f 7 Packaging Information SOP8 (Top View) <SOP-8> Side View 1 <SOP-8> Side View 2 Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 e 1.270(BSC) 0.050(BSC) E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 L 0.400 1.270 0.016 0.050 0° 8° 0° 8°
Preliminary Datasheet LPA8003 L P A 8 0 0 3 – 0 0 V e r s i o n 1 . 0 D a t a s h e e t S e p . - 2 0 1 3 www.lowpowersemi.com P a g e 7 o f 7