LPT670 AMSCO | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 21
Technical content
1 Version 1.1 | 2018-04-03 Discontinued Produktdatenblatt | Version 1.1 www.osram-os.com LP T670 TOPLED ® TOPLED, SMT LED with integrated reflector. With our great experience in SMT LED we are able to of- fer a high quality product for all kind of applications.
Applications
—Cluster, Button Backlighting —Electronic Equipment —Interior Illumination e.g. Ambient Map —White Goods Features: —Package: white PLCC-2 package, colorless clear resin —Chip technology: GaAsP —Typ. Radiation: 120° (Lambertian emitter) —Color: λdom = 560 nm (● pure green) —Corrosion Robustness Class: 3B —ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM)
2 Version 1.1 | 2018-04-03 Discontinued
Ordering Information
Type Luminous Intensity 1) Ordering Code IF = 10 mA Iv
3 Version 1.1 | 2018-04-03 Discontinued Maximum Ratings Parameter Symbol Values Operating Temperature Top min. max. -40 °C 100 °C Storage Temperature Tstg min. max. -40 °C 100 °C Junction Temperature T j max. 100 °C Forward current TS = 25 °C IF max. 30 mA Surge Current t ≤ 10 µs; D = 0.005 ; TS = 25 °C IFS max. 500 mA Reverse voltage 2) TS = 25 °C VR max. 12 V ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM) VESD 2 kV
4 Version 1.1 | 2018-04-03 Discontinued Characteristics IF = 10 mA; TS = 25 °C Parameter Symbol Values Peak Wavelength λpeak typ. 557 nm Dominant Wavelength 3) IF = 10 mA λdom min. typ. max. 556 nm 560 nm 564 nm Spectral Bandwidth at 50% Irel,max ∆λ typ. 22 nm Viewing angle at 50 % IV 2φ typ. 120 ° Forward Voltage 4) IF = 10 mA VF min. typ. max. 1.80 V 2.00 V 2.50 V Reverse current 2) VR = 12 V IR typ. max. 0.01 µA 10 µA Temperature Coefficient of Peak Wavelength -10°C ≤ T ≤ 100°C TCλpeak typ. 0.11 nm / K Temperature Coefficient of Dominant Wavelength -10°C ≤ T ≤ 100°C TCλdom typ. 0.05 nm / K Temperature Coefficient of Forward Voltage -10°C ≤ T ≤ 100°C TCVF typ. -2.1 mV / K Real thermal resistance junction/ambient 5), 6) RthJA real max. 400 K / W Real thermal resistance junction/solderpoint 5) RthJS real max. 180 K / W
5 Version 1.1 | 2018-04-03 Discontinued Brightness Groups Group Luminous Intensity 1) Luminous Intensity. 1) Luminous Flux 7) IF = 10 mA IF = 10 mA IF = 10 mA min. max. typ. Iv Iv ΦV G2 2.24 mcd 2.80 mcd 7.60 mlm H1 2.80 mcd 3.55 mcd 9.50 mlm H2 3.55 mcd 4.50 mcd 12.10 mlm J1 4.50 mcd 5.60 mcd 15.10 mlm J2 5.60 mcd 7.10 mcd 19.00 mlm Group Name on Label Example: G2-1 Brightness Wavelength G2 1
6 Version 1.1 | 2018-04-03 Discontinued rel λ OHL01697 100 0400 450 500 550 600 650 700nm I pure-green green yellow orange super-red λV Relative Spectral Emission 7) Irel = f (λ); IF = 10 mA; TS = 25 °C 0.2 0.4 1.0 0.8 0.6 ϕ 1.0 0.8 0.6 0.4 50˚ 60˚ 70˚ 80˚ 90˚ 100˚ Radiation Characteristics 7) Irel = f (ϕ); TS = 25 °C
7 Version 1.1 | 2018-04-03 Discontinued green OHL00993110 100 -110 10 010 5 110 210mA IV (10 mA) IV FI yellow pure-green super-red orange Relative Luminous Intensity 7), 8) Iv/Iv(10 mA) = f(IF); TS = 25 °C 10 -1 V pure-green super-red orange/yellow green OHL02145 IF FV 010 110 210 mA Forward current 7), 8) IF = f(VF); TS = 25 °C
8 Version 1.1 | 2018-04-03 Discontinued yellow green orange super-red pure-green 0.0 OHL02150 j 02 04 06 08 0 100 V VI I 0.4 0.8 1.2 1.6 2.0 (25 ˚C) T Relative Luminous Intensity 7) Iv,rel = f (TA); IF = 10
9 Version 1.1 | 2018-04-03 Discontinued T OHL00962 FI 0 20 40 60 80 C 100 mA TA TS temp. ambient temp. solder point ΤA ΤS Max. Permissible Forward Current IF = f(T) OHL01686 s10-5 10-4 10-3 10-2 10-1 100 101 t D I T T P F tP= D = 0.005 0.01 0.02 0.05 0.2 0.5 DC10 1 IF t 210 0.1 p 10 3 mA Permissible Pulse Handling Capability IF = f(tp); D: Duty cycle; TS = 25 °C
10 Version 1.1 | 2018-04-03 Discontinued Dimensional Drawing 9) GPLY6724 0.7 (0.028) 0.9 (0.035) 1.7 (0.067) 2.1 (0.083) 0.12 (0.005) 0.18 (0.007) 0.5 (0.020) 3.7 (0.146) 0.4 (0.016) 0.6 (0.024) 2.6 (0.102) 3.0 (0.118) 2.1 (0.083) 2.3 (0.091) Cathode marking 3.0 (0.118) 3.4 (0.134) (2.4) (0.095) 0.1 (0.004) (typ.) 4˚±1 A C Approximate Weight: 34.0 mg Package marking: Cathode Corrosion test: Class: 3B Test condition: 40°C / 90 % RH / 15 ppm H2S / 14 days (stricter then IEC 60068-2-43)
11 Version 1.1 | 2018-04-03 Discontinued For superior solder joint connectivity results we recommend soldering under standard nitrogen atmosphere. Package not suitable for ultra sonic cleaning. Recommended Solder Pad 9) OHLPY970 4.5 (0.177) 2.6 (0.102) 1.5 (0.059) Cu-area > 16 mm Cu-Fläche > 16 mm Solder resist Lötstopplack 4.5 (0.177) 1.5 (0.059) 2.6 (0.102) Padgeometrie für improved heat dissipation verbesserte Wärmeableitung Paddesign for For superior solder joint connectivity results we recommend soldering under standard nitrogen atmosphere. Package not suitable for ultra sonic cleaning. Recommended Solder Pad 9) OHLPY440 Padgeometrie für verbesserte Wärmeableitung improved heat dissipation Paddesign for Lötstoplack Solder resist 0.8 (0.031) 3.7 (0.146) 1.1 (0.043) 2.3 (0.091) 3.3 (0.130) 1.5 (0.059) 11.1 (0.437) Cu Fläche /1 6 mm per pad2 Cu-area 3.3 (0.130) Kathode/ Cathode Anode 0.7 (0.028) Fläche darf bei Verwendung von TOPLED® For TOPLED® assembly do not use elektrisch nicht beschaltet werden. this area for electrical contact Fläche darf bei Verwendung von TOPLED® For TOPLED® assembly do not use elektrisch nicht beschaltet werden. this area for electrical contact
12 Version 1.1 | 2018-04-03 Discontinued Reflow Soldering Profile Product complies to MSL Level 2 acc. to JEDEC J-STD-020E 00 s OHA04525 100 150 200 250 300 50 100 150 200 250 300 t T St t Pt Tp240 ˚C 217 ˚C 245 ˚C 25 ˚C L Profile Feature Symbol Pb-Free (SnAgCu) Assembly Unit Minimum Recommendation Maximum Ramp-up rate to preheat*) 25 °C to 150 °C 2 3 K/s Time tS TSmin to TSmax tS 60 100 120 s Ramp-up rate to peak*) TSmax to TP 2 3 K/s Liquidus temperature TL 217 °C Time above liquidus temperature tL 80 100 s Peak temperature TP 245 260 °C Time within 5 °C of the specified peak temperature TP - 5 K tP 10 20 30 s Ramp-down rate* T P to 100 °C 3 6 K/s Time 25 °C to TP 480 s All temperatures refer to the center of the package, measured on the top of the component * slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-range
13 Version 1.1 | 2018-04-03 Discontinued Taping 9)
14 Version 1.1 | 2018-04-03 Discontinued Tape and Reel 10) Reel dimensions [mm] A W Nmin W1 W2 max Pieces per PU 180 mm 8 + 0.3 / - 0.1 60 8.4 + 2 14.4 2000 330 mm 8 + 0.3 / - 0.1 60 8.4 + 2 14.4 8000
15 Version 1.1 | 2018-04-03 Discontinued Barcode-Product-Label (BPL) Moisture-sensitive product is packed in a dry bag containing desiccant and a humidity card according JEDEC-STD-033. Dry Packing Process and Materials 9) OHA00539 OSRAM Moisture-sensitive label or print Barcode label Desiccant Humidity indicator Barcode label OSRAM Please check the HIC immidiately after bag opening. Discard if circles overrun. Avoid metal contact. WET Do not eat. Comparator check dot parts still adequately dry. examine units, if necessary examine units, if necessary 15% 10%bake units bake units If wet, change desiccant If wet, Humidity Indicator MIL-I-8835 If wet, M oisture Level 3 Floor tim e 168 Hours M oisture Level 6 Floor tim e 6 Hours a) Hum idity Indicator Card is > 10% when read at 23 ˚C ± 5 ˚C, or reflow, vapor-phase reflow, or equivalent processing (peak package 2. After this bag is opened, devices that will be subjected to infrared 1. Shelf life in sealed bag: 24 m onths at < 40 ˚C and < 90% relative hum idity (RH). M oisture Level 5a at factory conditions of (if blank, seal date is identical with date code). a) M ounted within b) Stored at body tem 3. Devices require baking, before m ounting, if: Bag seal date M oisture Level 1 M oisture Level 2 M oisture Level 2a4. If baking is required, b) 2a or 2b is not m et. Date and tim e opened: reference IPC/JEDEC J-STD-033 for bake procedure. Floor tim e see below If blank, see bar code label Floor tim e > 1 Year Floor tim e 1 Year Floor tim e 4 W eeks10% RH. M oisture Level 4 M oisture Level 5 ˚C). OPTO SEMICONDUCTORS MOISTURE SENSITIVE This bag contains CAUTION Floor tim e 72 Hours Floor tim e 48 Hours Floor tim e 24 Hours 30 ˚C/60% RH. LEVEL If blank, see bar code label
16 Version 1.1 | 2018-04-03 Discontinued Transportation Packing and Materials 9) OHA02044 PACKVAR:R077Additional TEXT P-1+Q-1 Multi TOPLED Muster OSRAM Opto Semiconductors (6P) BATCH NO (X) PROD NO (9D) D/C: 11(1T) LO T NO 210021998 123GH1234 0 24 5 (Q)QTY : 2000 0144 (G) GROUP
260 C RT240 C
R 220 C R ML Bin3 :Bin2: Q-1-2 Bin1: P-1-20 LSY T676 2 2a Tem p ST R18 DEMY PACKVAR: R077Additional TEXT P-1+Q-1 Multi TOPLED Muster OSRAM Opto Semiconductors (6P) BATCH NO: (X) PROD NO: (9D) D/C: 11(1T) LOT NO: 210021998 123GH1234 0 24 5 (Q)QTY: 2000 0144 (G) GROUP:
260 C RT
240 C R
220 C R
MLBin3:Bin2: Q-1-20 Bin1: P-1-20 LSY T676 2 2a Temp ST R18 DEMY OSRAM Packing Sealing label Barcode label M oisture Leve l 3 Fl oo r tim e 16
8 Hours
M oisture Level 6 Floor tim e 6 Hours a) Hum idity Indicator Card is > 10% when read at 23 ˚C ± 5 ˚C , or reflow, vapor- pha se ref low, or equiva lent proce ssing (peak packa ge 2. After this bag is opened, device s that will be subjecte d to infrared 1. Sh elf life in sealed bag: 24 m on th s at 40 ˚C and < 90% relative hu mi dity (R H). M oisture L evel 5a at factory co nditions of (if blank, seal date is identica l with da te co de) M ounte d within b) St ore d at body tem 3. Devic es re quire baking, bef ore m ounting, if: Bag seal date M oisture Leve l 1 M oisture Leve l 2 M oisture Leve l 2a4. If baking is require b) 2a or 2b is not me Date and tim e op ened re fere nce IPC/JED EC ST D-033 for bake procedur Floor tim e se e below If blan k, see ba r co de label Floor tim e >
1 Year
eeks10% RH. M oisture Le ve l 4 M oisture Level 5 ˚C). OPT O SE MICONDUCT ORS MO ISTU RE SE NSITIVE This ba g contains CA UTIO N Floo r tim e 72 Hours Floor time
48 Hours
24 Hours
/60% RH. LE VE L If blank, see bar code label Barcode label Dimensions of transportation box in mm Width Length Height 200 ± 5 mm 195 ± 5 mm 30 ± 5 mm 352 ± 5 mm 352 ± 5 mm 33 ± 5 mm
17 Version 1.1 | 2018-04-03 Discontinued Chip Technology: 1: TSN 3: standard InGaN 4: AlGaAs (RECLED) 5: HOP 2000 6: Standard InGalP 9: TSN low current B: HOP 2000 C: ATON D: Low cost ThinGaN/ Thinfilm (e.g. 6mil) F: Thinfilm InGaAlP G: ThinGaN(Thinfilm InGaN) (Subcon:Sapphire) K: InGaAlP low current S: standard InGaN low current 0: TSN Encapsulant Type / Lens Properties 7: Colorless clear or white volume conversion (resin encapsulation) S: Silicone (with or without diffuser) Wavelength Emission Color Color coordinates according (λdom typ.) CIE 1931/Emission color: A: 617 nm amber W: white S: 633 nm super red UW: ultra white T: 528 nm true green CB: color on demand blue Y: 587 nm yellow CG: color on demand green O: 606 nm orange CL: color on demand lagune G: 570 nm green P: 560 nm pure green R: 625 nm red B: 470 nm blue H: 645 nm hyper-red V: 505 nm verde green L: Light emitting diode Package Type T: TOPLED Lead / Package Properties 6: folded leads 7: reverse gullwing leads T: folded leads, improved corrosion stability Au-LF), w/o TiO2 jetting V: folded leads and UX:3 w/ improved corrosion stability (Au-LF), TiO2 jetting Type Designation System L A T 6 7 6
18 Version 1.1 | 2018-04-03 Discontinued Notes The evaluation of eye safety occurs according to the standard IEC 62471:2006 (photo biological safety of lamps and lamp systems). Within the risk grouping system of this IEC standard, the LED specified in this data sheet fall into the class exempt group (exposure time 10000 s). Under real circumstances (for expo- sure time, eye pupils, observation distance), it is assumed that no endangerment to the eye exists from these devices. As a matter of principle, however, it should be mentioned that intense light sources have a high secondary exposure potential due to their blinding effect. As is also true when viewing other bright light sources (e.g. headlights), temporary reduction in visual acuity and afterimages can occur, leading to irrita- tion, annoyance, visual impairment, and even accidents, depending on the situation. Subcomponents of this LED contain, in addition to other substances, metal filled materials including silver. Metal filled materials can be affected by environments that contain traces of aggressive substances. There- fore, we recommend that customers minimize LED exposure to aggressive substances during storage, pro- duction, and use. LEDs that showed visible discoloration when tested using the described tests above did show no performance deviations within failure limits during the stated test duration. Respective failure limits are described in the IEC60810. For further application related informations please visit www.osram-os.com/appnotes
19 Version 1.1 | 2018-04-03 Discontinued Disclaimer Disclaimer Language english will prevail in case of any discrepancies or deviations between the two language word- ings. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. If printed or downloaded, please find the latest version on the OSRAM OS webside. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Product safety devices/applications or medical devices/applications OSRAM OS components are not developed, constructed or tested for the application as safety relevant component or for the application in medical devices. In case Buyer – or Customer supplied by Buyer– considers using OSRAM OS components in product safety devices/applications or medical devices/applications, Buyer and/or Customer has to inform the local sales partner of OSRAM OS immediately and OSRAM OS and Buyer and /or Customer will analyze and coordi- nate the customer-specific request between OSRAM OS and Buyer and/or Customer.
20 Version 1.1 | 2018-04-03 Discontinued Glossary 1) Brightness: Brightness values are measured during a current pulse of typically 25 ms, with an internal reproducibility of ±8 % and an expanded uncertainty of ±11 % (acc. to GUM with a coverage factor of k = 3). 2) Reverse Operation: Reverse Operation of 10 hours is permissible in total. Continuous reverse opera- tion is not allowed. 3) Wavelength: The wavelength is measured at a current pulse of typically 25 ms, with an internal repro- ducibility of ±0.5 nm and an expanded uncertainty of ±1 nm (acc. to GUM with a coverage factor of k = 3). 4) Forward Voltage: The forward voltage is measured during a current pulse of typically 8 ms, with an internal reproducibility of ±0.05 V and an expanded uncertainty of ±0.1 V (acc. to GUM with a coverage factor of k = 3). 5) Thermal Resistance: Rth max is based on statistic values (6σ). 6) Thermal Resistance: RthJA results from mounting on PC board FR 4 (pad size 16 mm² per pad) 7) Typical Values: Due to the special conditions of the manufacturing processes of LED, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not nec- essarily correspond to the actual parameters of each single product, which could differ from the typical data and calculated correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data will be changed without any further notice. 8) Characteristic curve: In the range where the line of the graph is broken, you must expect higher differ- ences between single LEDs within one packing unit. 9) Tolerance of Measure: Unless otherwise noted in drawing, tolerances are specified with ±0.1 and dimensions are specified in mm. 10) Tape and Reel: All dimensions and tolerances are specified acc. IEC 60286-3 and specified in mm.
21 Version 1.1 | 2018-04-03 Discontinued Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-93055 Regensburg www.osram-os.com © All Rights Reserved.