LM7912E3 CYSTEKEC | Alldatasheet

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CYStech Electronics Corp. Spec. No. : C536E3 Issued Date : 2003.04.08 Revised Date :2010.05.21 Page No. : 1/5 LM7912E3 CYStek Product Specification 3-TERMINAL NEGATIVE VOLTAGE REGULATOR LM7912E3

Description

The LM7912E3 series of three-terminal negative regulators are available in the TO-220 package. These regulators can provide local on-card regulation, eliminating the distribution problems associated with single point regulation. Each employs internal current limiting, thermal shutdown and safe operating area protection, making it essentially indestructible. If adequate heat sinking is provided, they can deliver over 1.5A output current. Although designed primarily as fixed voltage regulators, these devices can be used with external components to obtain adjustable voltages and currents. LM7912E3 is characterized for operation from -40°C to +125°C, and if operating temperature is always high, please refer to the power dissipation curve. Absolute Maximum Ratings (Ta=25°C) TO-220 Typical Application Schematic Diagram LM7912 Vout Vin C1 C2 Note: Bypass Capacitors are recommended for optimum stability and transient response and should be located as close as possible to the regulator. 1.4k 15K Vin 750 1K 6K 20K 20K 20K 20pF 10pF 600 15K 20K 10K 6.2V 150 0.2 Vout 5K4K GND

CYStech Electronics Corp. Spec. No. : C536E3 Issued Date : 2003.04.08 Revised Date :2010.05.21 Page No. : 2/5 LM7912E3 CYStek Product Specification

Electrical Characteristics

Vin= -19V, Io=500mA, Cin=2.2μF, Cout=1μF, 0°C≤Tj≤125°C (unless otherwise noted) Limits Symbol Parameter Conditions Min Typ Max Units A-rank (3%) -11.64 -12.36Output V oltage B-rank (5%) Tj=25°C -11.4 -12 -12.6 A-rank (3%) -11.64 -12.36Vo Output V oltage B-rank (5%) PD≤15W, 5mA≤ IO≤ 1A V Tj=25°C, -14.5V ≥ Vin≥-30V - - 240ΔVo Line Regulation Tj=25°C, -16V≥Vin≥-22V - - 120 mV 5mA≤ IO≤1.5A - - 240ΔVo Load Regulation 250mA≤ IO≤750mA - - 120 mV IQ Quiescent Current IO≤1A, Tj=25°C - 3 8 mA 5mA≤ IO≤1A - - 0.5 ΔIQ Quiescent Current Change -14.5V≥Vin≥-30V - - 1.0 mA ΔVo / ΔT Output V oltage Drift Io=5mA - -0.8 - mV/°C Vn Output Noise V oltage Ta=25°C, 10Hz≤ f ≤100KHz - 200 - μV RR Ripple Rejection ΔVi=10V , f=120Hz 54 68 - dB VD Dropout V oltage Tj=25°C, IO=1A - 2 - V Isc Short Circuit Current Tj=25°C, Vin=-35V - 2.2 - A Ipk Peak Output Current Tj=25°C 1.3 2.2 - A

Ordering Information

LM7912E3(A-rank) ± 3% TO-220 (Pb-free) 7912 LM7912E3(B-rank) ± 5% TO-220 (Pb-free) 7912

CYStech Electronics Corp. Spec. No. : C536E3 Issued Date : 2003.04.08 Revised Date :2010.05.21 Page No. : 3/5 LM7912E3 CYStek Product Specification Characteristic Curves Average Case Power Dissipation as A Function of Ambient Temperauture 0.1 100 25 50 75 100 125 150 Ambient Temperature (ºC) Power Dissipation Peak Output Current as A Function of Input- Output Differentail Voltage 0.5 1.5 2.5 0 3 6 9 12 15 18 21 24 27 30 Input-Output Voltage Differential Output Current Ripple Rejection as A Function of Frequency 100 10 100 1000 10000 100000 Frequency Ripple Rejection (dB) Ripple Rejection as A Function of Output Voltage 2 4 6 8 10 12 14 16 18 20 22 Output Voltage Ripple Rejection (dB) Output Voltage as A Function of Junction Temperature 6.06 6.1 6.14 6.18 6.22 6.26 -25 0 25 50 75 100 125 175 Junction Temperature (ºC) Output Voltage (Volts)

CYStech Electronics Corp. Spec. No. : C536E3 Issued Date : 2003.04.08 Revised Date :2010.05.21 Page No. : 4/5 LM7912E3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) 183°C 60-150 seconds 217°C 60-150 seconds − Time (tL) Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C536E3 Issued Date : 2003.04.08 Revised Date :2010.05.21 Page No. : 5/5 LM7912E3 CYStek Product Specification TO-220 Dimension A B E G I KM OP C N H D Device Name Date Code 7912 □□□□ Marking: Style: Pin 1.Gnd 2.Vin 3.Vout 4.Vin 3-Lead TO-220 Plastic Package CYStek Package Code: E3 *: Typical Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.