LH53517 SHARP | Alldatasheet
Document overview
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Technical content
LH53517 CMOS 512K (64K × 8) MROM
FEATURES
- • 65,536 words × 8 bit organization
- • Access time: 150 ns (MAX.)
- • Low-power consumption: Operating: 165 mW (MAX.) Standby: 550 µW (MAX.)
- • Static operation
- • TTL compatible I/O
- • Three-state outputs
- • Single +5 V power supply
- • Mask-programmable OE/OE
- • Packages: 28-pin, 600-mil DIP 28-pin, 450-mil SOP 28-pin, 8 × 13.4 mm2 TSOP (Type I)
DESCRIPTION
The LH53517 is a mask-programmable ROM organ- ized as 65,536 × 8 bits. It is fabricated using silicon-gate CMOS process technology. PIN CONNECTIONS 53517-1 TOP VIEW 8A2 A15 A12 GND A13 A11 A10 CE D 7 D 6 D 3
27 A 14
16 D 4
Figure 1. Pin Connections for DIP and NOTE: Reverse bend available on request. Figure 2. Pin Connections for TSOP Package
- Active level of OE/OE is mask-programmable.
NOTE: Pin numbers apply to the 28-pin DIP or SOP. Figure 3. LH53517 Block Diagram
PARAMETER SYMBOL RA TING UNIT Supply voltage V CC –0.3 to +7.0 V Input voltage V IN –0.3 to VCC + 0.3 V Output voltage V OUT –0.3 to VCC + 0.3 V Operating temperature Topr 0 to +70 °C Storage temperature Tstg –65 to +150 °C RECOMMENDED OPERATING CONDI- TIONS (TA = 0 to +70°C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT Supply voltage V CC 4.5 5.0 5.5 V DC CHARACTERIST ICS (VCC = 5 V ±10%, TA = 0 to +70°C) PARAMETER S YMBOL CONDITIONS MIN. MAX. UNIT NOTE Input ‘Low’ voltage V IL –0.3 0.8 V Input ‘High’ voltage V IH 2.2 V CC + 0.3 V Output ‘Low’ voltage V OL IOL = 1.6 mA 0.4 V Output ‘High’ voltage V OH IOH = –400 µA 2.4 V Input leakage current | ILI | V IN = 0 V to VCC 10 µA Output leakage current | ILO |V OUT = 0 V to VCC 10 µA 1 Operating current ICC1 tRC = 150 ns 30 mA 2 ICC2 tRC = 1 µs 15 ICC3 tRC = 150 ns 25 mA 3 ICC4 tRC = 1 µs1 2 Standby current ISB1 CE = VIH 2m A ISB2 CE = VCC – 0.2 V 100 µA Input capacitance C IN f = 1 MHz TA = 25°C 10 pF Output capacitance C OUT 10 pF NOTES: 1. CE/OE = VIH , OE = VIL 2. V IN = VIH/VIL, CE = VIL, outputs open 3. V IN = (VCC – 0.2 V), 0.2 V, CE = 0.2 V, outputs open AC CHARACTERIST ICS (VCC = 5 V ±10%, TA = 0 to +70°C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTE Read cycle time t RC 150 ns Address access time t AA 150 ns Chip enable access time t ACE 150 ns Output enable delay time t OE 10 80 ns Output hold time t OH 5n s CE to output in High-Z t CHZ 70 ns 1 OE to output in High-Z t OHZ 70 ns 1 NOTE: 1. This is the time required for the output to become high-imped- ance. CMOS 512K MROM LH53517
input, chip enable, and output enable, respectively have been met. Figure 4. Timing Diagram
DIMENSIONS IN MM [INCHES] MAXIMUM LIMIT MINIMUM LIMIT 28DIP (DIP028-P-0600) 11 4 1528 28DIP-2 13.45 [0.530] 12.95 [0.510] 0.51 [0.020] MIN. 5.20 [0.205] 5.00 [0.197] 3.50 [0.138] 3.00 [0.118] 2.54 [0.100] TYP. 0.60 [0.024] 0.40 [0.016] 0.30 [0.012] 0.20 [0.008] DETAIL 36.30 [1.429] 35.70 [1.406] 0° TO 15° 4.50 [0.177] 4.00 [0.157] 15.24 [0.600] TYP. 28-pin, 600-mil DIP DIMENSIONS IN MM [INCHES] MAXIMUM LIMIT MINIMUM LIMIT 28SOP (SOP028-P-0450) 12.40 [0.488] 11.60 [0.457] 8.80 [0.346] 8.40 [0.331] 10.60 [0.417] 18.20 [0.717] 17.80 [0.701] 0.15 [0.006] 1.025 [0.040] 0.20 [0.008] 0.00 [0.000] 1.025 [0.040] 2.40 [0.094] 2.00 [0.079] 0.20 [0.008] 0.10 [0.004] 0.50 [0.020] 0.30 [0.012] 1.27 [0.050] TYP. 28 15 141 1.70 [0.067] 1.70 [0.067] 28SOP 28-pin, 450-mil SOP CMOS 512K MROM LH53517
DIMENSIONS IN MM [INCHES] MAXIMUM LIMIT MINIMUM LIMIT 28TSOP (TSOP028-P-0813) 28TSOP 0.28 [0.011] 0.12 [0.005] 0.55 [0.022] TYP. 12.00 [0.472] 11.60 [0.457] 13.70 [0.539] 13.10 [0.516] 8.20 [0.323] 7.80 [0.307] 0.15 [0.006] 1.10 [0.043] 0.90 [0.035] 1.20 [0.047] MAX. 12.60 [0.496] 12.20 [0.480] 0.20 [0.008] 0.10 [0.004] 0.20 [0.008] 0.90 [0.035] 0.425 [0.017] 0.20 [0.008] 0.00 [0.000] 0 - 10° DETAIL 0.425 [0.017] 28-pin, 8 × 13 mm2 TSOP (Type I) D 28-pin, 600-mil DIP (DIP028-P-0600) N 28-pin, 450-mil SOP (SOP028-P-0450) T 28-pin, 8 x 13.4 mm
2 TSOP (Type I) (TSOP028-P-0813)
TR 28-pin, 8 x 13 mm2 TSOP (Type I) Reverse bend (TSOP028-P-0813) LH53517 Device Type X Package 53517-5 Example: LH53517D (CMOS 512K (64K x 8) Mask Programmable ROM, 28-pin, 600-mil DIP) CMOS 512K (64K x 8) Mask Programmable ROM