LH5116

LH5116 SHARP | Alldatasheet

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Technical content

LH5116/H CMOS 16K (2K × 8) Static RAM

FEATURES

• • 2,048 × 8 bit organization
• • Access time: 100 ns (MAX.)
• • Power consumption: Operating: 220 mW (MAX.) Standby: 5.5 µW (MAX.)
• • Single +5 V power supply
• • Fully-static operation
• • TTL compatible I/O
• • Three-state outputs
• • Wide temperature range available LH5116H: -40 to +85°C
• • Packages: 24-pin, 600-mil DIP 24-pin, 300-mil SK-DIP 24-pin, 450-mil SOP DESC RIPTION The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE ). PIN CONNECTIONS Vcc24 OE I/O1 GND A10 CE TOP VIEW I/O2 I/O3 I/O7 I/O6 I/O5 I/O4 I/O8 WE 5116-1 24-PIN DIP 24-PIN SK-DIP 24-PIN SOP

Figure 1. Pin Connections for DIP , SK-DIP ,

Figure 2. LH5116/H Block Diagram

PARAMETER SYMBOL RATING UNIT NOTE Supply voltage VCC -0.3 to +7.0 V 1 Input voltage V IN -0.3 to VCC + 0.3 V 1 Operating temperature Topr 0 to +70 °C 2 -40 to +85 3 Storage temperature Tstg -55 to +150 °C NOTES: 1. The maximum applicable voltage on any pin with respect to GND. 2. Applied to the LH5116/D/NA 3. Applied to the LH5116H/HD/HN RECOMMENDED OPERATING CONDITIONS 1 PARAMETER SYMBOL MIN. TYP. MAX. UNIT Supply voltage V CC 4.5 5.0 5.5 V Input voltage VIH 2.2 V CC + 0.3 V VIL -0.3 0.8 V NOTE: 1. TA = 0 to 70°C (LH5116/D/NA), TA = -40 to +85°C (LH51 16H/HD/HN) DC CHARACTERIST ICS 1 (VCC = 5 V ±10%) PARAMETER SYMBOL COND ITIONS MIN. TYP. MAX. UNIT NOTE Output ‘LOW’ voltage V OL IOL = 2.1 mA 0.4 V Output ‘HIGH’ voltage V OH IOH = -1.0 mA 2.4 V Input leakage current ILI VIN = 0 V to VCC -1.0 1.0 µA Output leakage current I LO CE = VIH, VI/O = 0 V to VCC -1.0 1.0 µA Operating current ICC1 Outputs open (OE = VCC )2 5 3 0 m A 2 ICC2 Outputs open (OE = VIH)3 0 4 0 m A 3 Standby current I SB CE ≥ VCC - 0.2 V All other input pins = 0 V to VCC 1.0 µA0.2 4 NOTES: 1. TA = 0 to 70°C (LH5116/D/NA), TA = -40 to +85°C (LH51 16H/HD/HN) 2. CE = 0 V; all other input pins = 0 V to VCC 3. CE = VIL; all other input pins = VIL to VIH 4. TA = 25°C AC CHARACTERIST ICS 1 (1) READ CYCLE (VCC = 5 V ±10%) PARAMETER SYMBOL MIN. TYP . MAX. UNIT NOTE Read cycle time t RC 100 ns Address access time t AA 100 ns Chip enable access time t ACE 100 ns Chip enable Low to output in Low-Z t CLZ 10 ns 2 Output enable access time t OE 40 ns Output enable Low to output in Low-Z tOLZ 10 ns 2 Chip disable to output in High-Z t CHZ 04 0 n s 2 Output disable to output in High-Z t OHZ 04 0 n s 2 Output hold time t OH 10 ns NOTES: 1. TA = 0 to 70°C (LH5116/NA/D). TA = -40 to 85°C (LH5116H/HD/HN). 2. Active output to high-impedance and high-impedance to output active tests specified for a ±200 mV transition from steady state levels into the test load. CMOS 16K (2K × 8) Static RAM LH5116/H

(2) WRITE CYCLE 1 (VCC = 5 V ±10%) PARAMETER SYMBOL MIN. TYP. MAX. UNIT NOTE Write cycle time tWC 100 ns Chip enable to end of write tCW 80 ns Address valid time tAW 80 ns Address setup time t AS 0n s Write pulse width t WP 60 ns Write recovery time t WR 10 ns Output active from end of write t OW 10 ns 2 WE Low to output in High-Z t WHZ 03 0 n s 2 Data valid to end of write t DW 30 ns Data hold time t DH 10 ns Output enable to output in High-Z tOHZ 04 0 n s 2 Output active from end of write t OW 10 ns 2 NOTES: 1. TA = 0 to +70°C (LH5116/D/NA), TA = -40 to +85°C (LH51 16H/HD/HN) 2. Active output to high-impedance and high-impedance to output active tests specified for a ±200 mV transition from steady state levels into the test load. AC TEST CONDITIONS PARAMETER MODE NOTE Input voltage amplitude 0.8 V to 2.2 V Input rise/fall time 10 ns Timing reference level 1.5 V Output load condition 1TTL + C L (100 pF) 1 NOTE: 1. Includes scope and jig capacitance. DATA RETENTION CHARACTERISTICS 1 PARAMETER SYMBOL CONDI TIONS MIN. TYP. MAX. UNIT NOTE Data retention voltage VCCDR CE ≥ VCCRC - 0.2 V 2.0 5.5 V Data retention current ICCDR CE ≥ VCCDR - 0.2 V, VCCDR = 2.0 V 1.0 µA 0.2 2 Chip disable to data retention tCDR 0n s Recovery time t R tRC ns 3 NOTES: 1. TA = 0 to +70°C (LH5116/D/NA), TA = -40 to +85°C (LH51 16H/HD/HN) 2. TA = 25°C 3. tRC = Read cycle time CAPACITANCE 1 (f = 1 MHz, TA = 25°C) PARAMETER SYMBOL CONDITIONS MIN. TYP . MAX. UNIT Input capacitance C IN VIN = 0 V 7 pF Input/output capacitance C I/O VI/O = 0 V 10 pF NOTE: 1. This parameter is sampled and not production tested. LH5116/H CMOS 16K (2K × 8) Static RAM

Figure 7. Electrical Characteristic Curves

13.45 [0.530] 12.95 [0.510] 0.51 [0.020] MIN 5.30 [0.209] 4.90 [0.193] 3.45 [0.136] 3.05 [0.120] 2.54 [0.100] TYP. 0.60 [0.024] 0.40 [0.016] 0.30 [0.012] 0.20 [0.008] DETAIL DIMENSIONS IN MM [INCHES] 31.30 [1.232] 30.70 [1.209] 0° TO 15° MAXIMUM LIMIT MINIMUM LIMIT 4.45 [0.175] 4.05 [0.159] 15.24 [0.600] TYP. 24DIP (DIP024-P-0600) 11 2 24 13 24DIP-2 24-pin, 600-mil DIP PACKAGE DIAGRAMS 6.55 [0.258] 6.15 [0.242] 0.51 [0.020] MIN 4.40 [0.173] 4.00 [0.157] 3.45 [0.136] 3.05 [0.120] 1.778 [0.070] TYP. 0.56 [0.022] 0.36 [0.014] 7.62 [0.300] TYP. 0.30 [0.012] 0.20 [0.008] DETAIL 22.25 [0.876] 21.75 [0.856] 0° TO 15° 3.65 [0.144] 3.25 [0.128] 24SDIP (SDIP024-P-0300) DIMENSIONS IN MM [INCHES] MAXIMUM LIMIT MINIMUM LIMIT 11 2 1324 24SDIP 24-pin, 300-mil SK-DIP LH5116/H CMOS 16K (2K × 8) Static RAM

DIMENSIONS IN MM [INCHES] MAXIMUM LIMIT MINIMUM LIMIT 24SOP (SOP024-P-0450B) 12.40 [0.488] 11.60 [0.457] 8.80 [0.346] 8.40 [0.331] 10.60 [0.417] 15.60 [0.614] 15.20 [0.598] 0.15 [0.006] 1.025 [0.040] 0.20 [0.008] 0.00 [0.000] 1.025 [0.040] 2.40 [0.094] 2.00 [0.079] 0.20 [0.008] 0.10 [0.004] 0.50 [0.120] 0.30 [0.012] 1.27 [0.050] TYP. 24 13 121 1.70 [0.067] 1.70 [0.067] 24SOP 24-pin, 450-mil SOP CMOS 16K (2K × 8) Static RAM LH5116/H

10 100 Access Time (ns) LH5116 Device Type X Package - ## Speed 5116-8 CMOS 16K (2K x 8) Static RAM Blank 24-pin, 600-mil DIP (DIP024-P-0600) D 24-pin, 300-mil SK-DIP (DIP024-P-0300) N 24-pin, 450-mil SOP (SOP024-P-0450B) Example: LH5116N-10 (CMOS 16K (2K x 8) Static RAM, 100 ns, 24-pin, 450-mil SOP) ORDERING INFORMATION (T A = 0°C to 70°C) 10 100 Access Time (ns) LH5116H Device Type X Package - ## Speed 5116-9 CMOS 16K (2K x 8) Static RAM Blank 24-pin, 600-mil DIP (DIP024-P-0600) D 24-pin, 300-mil SK-DIP (DIP024-P-0300) N 24-pin, 450-mil SOP (SOP024-P-0450B) Example: LH5116HN-10 (CMOS 16K (2K x 8) Static RAM, 100 ns, 24-pin, 450-mil SOP) ORDERING INFORMATION (T A = -40°C to +85°C) LH5116/H CMOS 16K (2K × 8) Static RAM