LBP4SG

LBP4SG AMSCO | Alldatasheet

Document overview

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Technical content

1 Version 1.6 | 2021-10-12 Produktdatenblatt | Version 1.1 www.osram-os.com

Applications

PointLED ® With a diameter of just 2 mm, the PointLED is one of the smallest packages in its class and achieves high luminous efficacies. Due to its round and flat package, measuring only 0.775 mm high, it is ideal for application where space is a sensitive issue. Cluster, Button Backlighting Electronic Equipment Gaming, Amusement, Gambling Interior Illumination (e.g. Ambient Map) Transportation, Plane, Ship White Goods Features: Package: white SMT package, colorless clear silicone resin Chip technology: ThinGaN Typ. Radiation: 120° (Lambertian emitter) Color: λdom = 470 nm (● blue) Corrosion Robustness Class: 1B Qualifications: The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)

2 Version 1.6 | 2021-10-12

Ordering Information

Type Luminous Intensity 1) Mounting methode Ordering Code IF = 20 mA Iv LB P4SG-S2U1-35-45 224 ... 560 mcd Reverse Q65113A0985 LB P4SG-S2U1-35-45-F 224 ... 560 mcd Top Q65113A0986

3 Version 1.6 | 2021-10-12 Maximum Ratings Parameter Symbol Values Operating Temperature Top min. max. -40 °C 100 °C Storage Temperature Tstg min. max. -40 °C 100 °C Junction Temperature Tj max. 125 °C Forward current TS = 25 °C IF min. max. 3 mA 20 mA Surge Current t ≤ 10 µs; D = 0.005 ; TS = 25 °C IFS max. 200 mA Reverse voltage 2) TS = 25 °C VR max. 5 V ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) VESD 2 kV

4 Version 1.6 | 2021-10-12 Characteristics IF = 20 mA; TS = 25 °C Parameter Symbol Values Peak Wavelength λpeak typ. 465 nm Dominant Wavelength 3) IF = 20 mA λdom min. typ. max. 464 nm 470 nm 476 nm Spectral Bandwidth at 50% Irel,max ∆λ typ. 25 nm Viewing angle at 50% IV 2φ typ. 120 ° Forward Voltage 4) IF = 20 mA VF min. typ. max. 2.90 V 3.00 V 3.50 V Reverse current 2) VR = 5 V IR typ. max. 0.01 µA 10 µA Temperature Coefficient of Peak Wavelength -10°C ≤ T ≤ 100°C TCλpeak typ. 0.04 nm / K Real thermal resistance junction/solderpoint 5) RthJS real max. 240 K / W

5 Version 1.6 | 2021-10-12 Brightness Groups Group Luminous Intensity 1) Luminous Intensity. 1) Luminous Flux 6) IF = 20 mA IF = 20 mA IF = 20 mA min. max. typ. Iv Iv ΦV S2 224 mcd 280 mcd 760 mlm T1 280 mcd 355 mcd 950 mlm T2 355 mcd 450 mcd 1210 mlm U1 450 mcd 560 mcd 1520 mlm Forward Voltage Groups Group Forward Voltage 4) Forward Voltage 4) IF = 20 mA IF = 20 mA min. max. VF VF 4 2.90 V 3.20 V 5 3.20 V 3.50 V Wavelength Groups Group Dominant Wavelength 3) Dominant Wavelength 3) IF = 20 mA IF = 20 mA min. max. λdom λdom 3 464 nm 468 nm 4 468 nm 472 nm 5 472 nm 476 nm

6 Version 1.6 | 2021-10-12 Group Name on Label Example: S2-3-4 Brightness Wavelength Forward Voltage S2 3 4

7 Version 1.6 | 2021-10-12 Relative Spectral Emission 6) Irel = f (λ); IF = 20 mA; TS = 25 °C LB P4SG 350 400 450 500 550 600 650 700 750 800 λ [nm] 0,0 0,2 0,4 0,6 0,8 1,0 Irel :V λ Radiation Characteristics 6) Irel = f (ϕ); TS = 25 °C LB P4SG -100° -90° -80° -70° -60° -50° -40° -30° -20° ϕ [°] 0,0 0,2 0,4 0,6 0,8 1,0 Irel

8 Version 1.6 | 2021-10-12 Forward current 6) IF = f(VF); TS = 25 °C LB P4SG VF /V 100IF /m A Relative Luminous Intensity 6), 7) Iv/Iv(20 mA) = f(IF); TS = 25 °C LB P4SG 3 1003 4 5 10 20 30 4050 IF /m A 0.2 0.3 0.4 0.5 IV IV(20mA) Dominant Wavelength 6) Δλdom = f(IF); TS = 25 °C LB P4SG 3 20 40 60 80 100 IF /m A 8∆λ dom /n m

9 Version 1.6 | 2021-10-12 Forward Voltage 6) ΔVF = VF - VF(25 °C) = f(Tj); IF = 20 mA LB P4SG -40- 20 02 04 06 08 0 100 120 Tj /° C -0.3 -0.2 -0.1 0.0 0.1 0.2 0.3∆VF /V Relative Luminous Intensity 6) Iv/Iv(25 °C) = f(Tj); IF = 20 mA LB P4SG -40- 20 02 04 06 08 0 100 120 Tj /° C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4Iv Iv(25°C) Dominant Wavelength 6) Δλdom = λdom - λdom(25 °C) = f(Tj); IF = 20 mA LB P4SG -40- 20 02 04 06 08 0 100 120 Tj /° C 10∆λ dom /n m

10 Version 1.6 | 2021-10-12 Max. Permissible Forward Current IF = f(T) OHL02567 I mA F T temp. ambient temp. solder point T TS A AT TS 20 40 60 80 100 Permissible Pulse Handling Capability IF = f(tp); D: Duty cycle; TS = 25 °C 1010 0 -2-3-4-5 1010 10 FI A Pt =D T 210-1 10 tp 10 s1 0 OHL02565 T tP IF 0.02 0.5 0.2 0.05 0.1 D = 0.005 0.01 0.05 0.10 0.15 0.20 0.25 Permissible Pulse Handling Capability IF = f(tp); D: Duty cycle; TS = 85 °C 1010 0 -2-3-4-5 1010 10 FI A Pt =D T 210-1 10 tp 10 s1 0 OHL02566 T tP IF 0.02 0.5 0.2 0.05 0.1 D = 0.005 0.01 0.05 0.10 0.15 0.20 0.25

11 Version 1.6 | 2021-10-12 Dimensional Drawing 8) Further Information: Approximate Weight: 6.0 mg Corrosion test: Class: 1B Test condition: 25°C / 75 % RH / 200ppb SO2, 200ppb NO2, 10ppb H2S, 10ppb Cl2 / 21 days (EN 60068-2-60 (Method 4))

12 Version 1.6 | 2021-10-12 Recommended Solder Pad 8) Recommended Solder Pad 8) For superior solder joint connectivity results we recommend soldering under standard nitrogen atmosphere. Package not suitable for ultra sonic cleaning.

13 Version 1.6 | 2021-10-12 Reflow Soldering Profile Product complies to MSL Level 2 acc. to JEDEC J-STD-020E 00 s OHA04525 100 150 200 250 300 50 100 150 200 250 300 t T St t Pt Tp240 ˚C 217 ˚C 245 ˚C 25 ˚C L Profile Feature Symbol Pb-Free (SnAgCu) Assembly Unit Minimum Recommendation Maximum Ramp-up rate to preheat*) 25 °C to 150 °C 2 3 K/s Time tS TSmin to TSmax tS 60 100 120 s Ramp-up rate to peak*) TSmax to TP 2 3 K/s Liquidus temperature TL 217 °C Time above liquidus temperature tL 80 100 s Peak temperature TP 245 260 °C Time within 5 °C of the specified peak temperature TP - 5 K tP 10 20 30 s Ramp-down rate* TP to 100 °C 3 6 K/s Time 25 °C to TP 480 s All temperatures refer to the center of the package, measured on the top of the component * slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-range

14 Version 1.6 | 2021-10-12 Taping 8) Taping 8)

15 Version 1.6 | 2021-10-12 Tape and Reel 9) Reel Dimensions A W Nmin W1 W2 max Pieces per PU 180 mm 8 + 0.3 / - 0.1 mm 60 mm 8.4 + 2 mm 14.4 mm 3000

16 Version 1.6 | 2021-10-12 Barcode-Product-Label (BPL) Dry Packing Process and Materials 8) OHA00539 OSRAM Moisture-sensitive label or print Barcode label Desiccant Humidity indicator Barcode label OSRAM Please check the HIC immidiately after bag opening. Discard if circles overrun. Avoid metal contact. WET Do not eat. Comparator check dot parts still adequately dry. examine units, if necessary examine units, if necessary 15% 10%bake units bake units If wet, change desiccant If wet, Humidity Indicator MIL-I-8835 If wet, M oisture Level 3 Floor tim e 168 Hours M oisture Level 6 Floor tim e 6 Hours a) Hum idity Indicator Card is > 10% when read at 23 ˚C ± 5 ˚C, or reflow, vapor-phase reflow, or equivalent processing (peak package 2. After this bag is opened, devices that will be subjected to infrared 1. Shelf life in sealed bag: 24 m onths at < 40 ˚C and < 90% relative hum idity (RH). M oisture Level 5a at factory conditions of (if blank, seal date is identical with date code). a) M ounted within b) Stored at body tem 3. Devices require baking, before m ounting, if: Bag seal date M oisture Level 1 M oisture Level 2 M oisture Level 2a4. If baking is required, b) 2a or 2b is not m et. Date and tim e opened: reference IPC/JEDEC J-STD-033 for bake procedure. Floor tim e see below If blank, see bar code label Floor tim e > 1 Year Floor tim e 1 Year Floor tim e 4 W eeks10% RH. M oisture Level 4 M oisture Level 5 ˚C). OPTO SEMICONDUCTORS MOISTURE SENSITIVE This bag contains CAUTION Floor tim e 72 Hours Floor tim e 48 Hours Floor tim e 24 Hours 30 ˚C/60% RH. LEVEL If blank, see bar code label Moisture-sensitive product is packed in a dry bag containing desiccant and a humidity card according JEDEC-STD-033.

17 Version 1.6 | 2021-10-12 TTyyppee DDeessiiggnnaattiioonn SSyysstteemm LL AA PP 44 77 BB CChhiipp TTeecchhnnoollooggyy 33:: standard InGaN 66:: standard InGaAlP BB:: HOP 2000 FF:: Thinfilm InGaAlP GG:: ThinGaN (Thinfilm InGaN) (Subcon: Sapphire) KK:: InGaAlP low current EEnnccaappssuullaanntt TTyyppee // LLeennss PPrrooppeerrttiieess 77:: colorless clear or white volume conversion (resin encapsulation) SS:: Silicone (with or without diffuser) WWaavveelleennggtthh EEmmiissssiioonn CCoolloorr CCoolloorr ccoooorrddiinnaatteess aaccccoorrddiinngg ((λλddoomm ttyypp..)) CCIIEE 11993311//EEmmiissssiioonn ccoolloorr:: TT:: 528 nm true green WW:: white YY:: 587 nm yellow CCBB:: color on demand blue AA:: 617 nm amber BB:: 470 nm blue RR:: 625 nm red OO:: 606 nm orange PP:: 560 nm pure green SS:: 633 nm super red GG:: 570 nm green LL:: Light emitting diode PPaacckkaaggee TTyyppee PP:: POINTLED LLeeaadd // PPaacckkaaggee PPrrooppeerrttiieess 44:: through hole WW:: folded leads and UX:3, Ag-LF, w/o TO2 jetting

18 Version 1.6 | 2021-10-12 Notes The evaluation of eye safety occurs according to the standard IEC 62471:2006 (photo biological safety of lamps and lamp systems). Within the risk grouping system of this IEC standard, the device specified in this data sheet fall into the class exempt group (exposure time 10000 s). Under real circumstances (for expo- sure time, conditions of the eye pupils, observation distance), it is assumed that no endangerment to the eye exists from these devices. As a matter of principle, however, it should be mentioned that intense light sources have a high secondary exposure potential due to their blinding effect. When looking at bright light sources (e.g. headlights), temporary reduction in visual acuity and afterimages can occur, leading to irrita- tion, annoyance, visual impairment, and even accidents, depending on the situation. Subcomponents of this device contain, in addition to other substances, metal filled materials including silver. Metal filled materials can be affected by environments that contain traces of aggressive substances. There- fore, we recommend that customers minimize device exposure to aggressive substances during storage, production, and use. Devices that showed visible discoloration when tested using the described tests above did show no performance deviations within failure limits during the stated test duration. Respective failure limits are described in the IEC60810. For further application related information please visit www.osram-os.com/appnotes

19 Version 1.6 | 2021-10-12 Disclaimer Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. If printed or downloaded, please find the latest version on the OSRAM OS website. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Product and functional safety devices/applications or medical devices/applications OSRAM OS components are not developed, constructed or tested for the application as safety relevant component or for the application in medical devices. OSRAM OS products are not qualified at module and system level for such application. In case buyer – or customer supplied by buyer – considers using OSRAM OS components in product safety devices/applications or medical devices/applications, buyer and/or customer has to inform the local sales partner of OSRAM OS immediately and OSRAM OS and buyer and /or customer will analyze and coordi- nate the customer-specific request between OSRAM OS and buyer and/or customer.

20 Version 1.6 | 2021-10-12 Glossary 1) Brightness: Brightness values are measured during a current pulse of typically 25 ms, with an internal reproducibility of ±8 % and an expanded uncertainty of ±11 % (acc. to GUM with a coverage factor of k = 3). 2) Reverse Operation: This product is intended to be operated applying a forward current within the specified range. Applying any continuous reverse bias or forward bias below the voltage range of light emission shall be avoided because it may cause migration which can change the electro-optical char- acteristics or damage the LED. 3) Wavelength: The wavelength is measured at a current pulse of typically 25 ms, with an internal repro- ducibility of ±0.5 nm and an expanded uncertainty of ±1 nm (acc. to GUM with a coverage factor of k = 3). 4) Forward Voltage: The forward voltage is measured during a current pulse of typically 8 ms, with an internal reproducibility of ±0.05 V and an expanded uncertainty of ±0.1 V (acc. to GUM with a coverage factor of k = 3). 5) Thermal Resistance: Rth max is based on statistic values (6σ). 6) Typical Values: Due to the special conditions of the manufacturing processes of semiconductor devic- es, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily correspond to the actual parameters of each single product, which could dif- fer from the typical data and calculated correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data will be changed without any further notice. 7) Characteristic curve: In the range where the line of the graph is broken, you must expect higher differ- ences between single devices within one packing unit. 8) Tolerance of Measure: Unless otherwise noted in drawing, tolerances are specified with ±0.1 and dimensions are specified in mm. 9) Tape and Reel: All dimensions and tolerances are specified acc. IEC 60286-3 and specified in mm.

21 Version 1.6 | 2021-10-12

Revision History

1.5 2020-05-27 Maximum Ratings Characteristics Glossary 1.6 2021-10-12 Ordering Information

22 Version 1.6 | 2021-10-12 Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-93055 Regensburg www.osram-os.com © All Rights Reserved.