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Parameter Symbol Value Unit Φe If Vr Top(c) Tstg 140 1.5 0 to +50 -20 to +80 mW mA V Radiant output power Forward current Reverse voltage Operating temperature Storage temperature IELECTRICAL AND OPTICAL CHARACTERISTICS (Top(C) = 25 °C) IABSOLUTE MAXIMUM RATINGS (Top(C) = 25 °C) Parameter Symbol Conditions Unit Max.Typ.Min. Value W A nm nm V degree degree µm A 1.2 830 50 × 1 0.35 I f = 1.2 A Φe = 1 W Φe = 1 W FWHM Value at designing Φ e Iop λc Vop θ// Ith Parallel Vertical Radiant output power Forward current Peak emission wavelength Spectral radiation half bandwidth Forward voltage Beam spread angle Emitting area Lasing threshold current Lateral multimode (broad stripe) CW Laser Diode L9277 Series IFEATURES GRadiant output power (CW): 1 W GPeak emission wavelength: 830 nm GEmitting area size: 50 µm × 1 µm IAPPLICATIONS GPumping source for solid state laser GProcessing GMedical instrument GMeasuring instrument Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2012 Hamamatsu Photonics K.K.