KTD1898 HTSEMI | Alldatasheet
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Technical content
- BASE 2. COLLECTOR 3. EMITTER
FEATURES
z General Purpose Application MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =0.1mA,I E =0 100 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA,I B =0 80 V Emitter-base breakdown voltage V (BR)EBO I E =0.1mA,I C =0 5 V Collector cut-off current I CBO V CB =80V,I E =0 1 µA Emitter cut-off current I EBO V EB =4V,I C =0 1 µA DC current gain h FE V CE =3V, I C =500mA 70 400 Collector-emitter saturation voltage V CE(sat) I C =500mA,I B =20mA 0.4 V Collector output capacitance C ob V CB =10V,I E =0, f=1MHz 20 pF Transition frequency f T V CE =10V,I C =50mA, f=100MHz 100 MHz CLASSIFICATION OF h FE RANK O Y GR RANGE 70–140 120 –240 200 –400 MARKING ZO ZY ZG Symbol Parameter Value Unit V CBO Collector-Base Voltage 100 V V CEO Collector-Emitter Voltage 80 V V EBO Emitter-Base Voltage 5 V I C Collector Current 1 A P C Collector Power Dissipation 500 mW R θJA Thermal Resistance From Junction To Ambient 250 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ KTD1898 TRANSISTOR (NPN) Date:2011/05 www.htsemi.comsemiconductor JinYu