KTD1304 HTSEMI | Alldatasheet
Document overview
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Technical content
FEATURES
- High emitter-base voltage
- low on resistance MARKING: MAX MAXIMUM RATINGS (T A =25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage 25 V V CEO Collector-Emitter Voltage 20 V V EBO Emitter-Base Voltage 12 V I C Collector Current -Continuous 0.3 A P C Collector Power Dissipation 0.2 W T j Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N T Y P M A X U N I T Collector-base breakdown voltage V (BR)CBO I C =100 μ A, I E =0 25 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA, I B =0 20 V Emitter-base breakdown voltage V (BR)EBO I E =100 μ A, I C =0 12 V Collector cut-off current I CBO V CB =25 V, I E =0 0.1 μ A Emitter cut-off current I EBO V EB =12V, I C =0 0.1 μ A h FE (FOR) V CE =2V, I C =4 mA 200 1000 DC current gain h FE (REV) V CE = 2V, I C = 4mA 20 Collector-emitter saturation voltage V CE (sat) I C = 100mA, I B =10 mA 0.25 V Base-emitter saturation voltage V BE (sat) I C = 100mA, I B =10mA 1 V Transition frequency f T V CE =10V, I C = 1mA 100MHz
60 MHz
C ob V CB =10V,I E =0,f=1MHz 10 pF On resistance R (on) V in =0.3V,I B =1mA,f=1KH Z 0.6 Ω SOT-23 1. BASE 2. EMITTER 3.COLLECTOR KTD1304 TRANSISTOR (NPN) Date:2011/05 www.htsemi.comsemiconductor JinYu
Date:2011/05 www.htsemi.comsemiconductor JinYu