KTD1304 HOTTECH | Alldatasheet
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Technical content
Page:P2-P1 Plastic-EncapsulateTransistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FE A TURES
- High emitter-base voltage
- low on resistance Marking:MAX Maximum Ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-BaseV oltage V CBO 25 V Collector-EmitterV oltage V CEO 20 V Emitter-Base V oltage V EBO 12 V CollectorCurrent-Continuous IC 300 m A CollectorPower dissipation PC 0.2 W JunctionTempe rature TJ 150 StorageTemp erature Tstg -55to +150 ELECTRICAL CHARACTERISTICS (@ Ta=25 unless otherwise specified) Param eter Sym bol Test conditions M in T yp M ax U nit Collector-base breakdow n voltage V CBO IC =100μA, IE=0 25 V Collector-emitterbreakdow n voltage V CEO IC =1mA, IB =0 20 V Emitter-base breakdow n voltage V EBO IE=100μA, IC =0 12 V Collector cut-off current ICBO V CB =25 V ,IE=0 0.1 μA Emitter cut-offcurrent IEBO V EB =12V , IC =0 0.1 μA DC current gain hFE (FOR) V CE =2V ,IC =4 mA 200 1000 hFE (REV) V CE = 2V ,IC = 4mA 20 Collector-emitter saturationvoltage V CE (sat) IC = 100mA, IB =10 mA 0.25 V Base-emitter saturation voltage V BE (sat) IC = 100mA, IB =10mA 1 V Transition frequency fT V CE =10V , IC = 1mA f=100MHz
60 MHz
V CB =10V ,IE=0,f=1MHz 10 pF On resis t a n ce R n V in =0.3 V B m A,f=1KH Z 0.6 Ω K T D 1304 (NP N ) 1. BASE 2. EMITTER SOT -23 3. COLLECTO
Page:P2-P2 Plastic-EncapsulateTransistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Typical CharacteristicsK T D 1304