KTD1146 JIANGSU | Alldatasheet
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TO – 92 1.EMITTER 2.COLLECTOR 3.BASE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KTD1146 TRANSISTOR (NPN)
FEATURES
CE(sat) z High Perfor mance at Low Supply Voltage. MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C = 0.1mA ,I E =0 40 V Collector-emitter breakdown voltage V (BR) CEO I C =1mA,I B =0 20 V Emitter-base breakdown voltage V (BR)EBO I E =0.01mA,I C =0 7 V Collector cut-off current I CBO V CB =20V,I E =0 0.1 μA Emitter cut-off current I EBO V EB =7V,I C =0 0.1 μA DC current gain h FE V CE =2V, I C =500mA 120 700 Collector-emitter saturation voltage V CE(sat) I C =3A,I B =60mA 0.4 V Transition Frequency f T V CE =6V,I C =50mA
20 MHz
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. CLASSIFICATION OF h FE RANK Q Y GR RANGE 120-240 200-400 350-700 Symbol Parameter Value Unit V CBO Collector-Base Voltage 40 V V CEO Collector-Emitter Voltage 20 V V EBO Emitter-Base Voltage 7 V I C Collector Current 5 A P C Collector Power Dissipation 0.625 W R θJA Thermal Resistance From Junction To Ambient 200 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ www.cj-elec.com 1 C,Dec,2015
A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.300 4.700 0.169 0.185 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 Φ 1.600 0.063 h 0.000 0.380 0.000 0.015 Symbol Dimensions In Millimeters Dimensions In Inches 1.270 TYP 0.050 TYP TO-92 Suggested Pad Lay out www.cj-elec.com 2 C ,Dec,2015
C,Dec,2015