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CTRONICS TECHNOLOGY CO., LTD TO -92 Plastic-Encapsulate Transistors KTC3197 TRANSISTO R (NPN)
FEATURES
z High Gain: Gpe=33dB (Typ) (f=45MHZ). z Good linearity of hFE MAXIMUM RATINGS (Ta=25℃ unless otherw ise noted) Symbol Paramete r Value Unit VCBO Collector-Bas e Voltage 30 V VCEO Collector-Emitter V oltage 25 V VEBO Emitter-Base Vo ltage 4 V IC Collector Curr ent -Continuous 50 mA PC Collector po wer dissipation 625 mW TJ Junction Temperature 150 ℃ Tstg St orage Temperature -55-150 ℃ ELECTRICAL CHARA CTERISTICS (Ta=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s Min Typ Max Unit Collecto r-base breakdown voltage V(BR)CB O IC=1mA,IE=0 30 V Collecto r-emitter breakdown voltage V(BR)CE O IC=10mA,IB=0 25 V Emitter-ba se breakdown voltage V(BR )EBO IE=1mA,IC=0 4 V Collecto r cut-off current ICBO V CB=30V ,IE=0 0.1 μA Emitter cut-off current IEBO V EB=3V ,IC=0 0.1 μA DC curr ent gain hFE V CE=12.5V ,IC=12.5mA 20 200 Collecto r-emitter saturation voltage VCE(sa t) I C=15mA,IB=1 .5mA 0.2 V Base -Emitter saturation voltage VBE(sat) I C=15mA,IB=1 .5mA 1.5 V Collecto r output capacitance Cob V CB=10V ,IE=0,f =1MHZ 0.8 2 pF Collecto r-base time constant Cc.rbb V CB=10V ,IE=-1mA, f= 30MHZ 25 pS Tr ansition frequency fT V CE=12.5V ,IC=12.5mA 300 MH Z Pow er gain Gpe V CE=12.5V ,IE=12.5mA, f=45MHZ 28 36 dB TO- 1. EMITTER 2. COLLECTOR 3. BASE www.cj-elec.com 1 C,Dec,2015
A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.300 4.700 0.169 0.185 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 Φ 1.600 0.063 h 0.000 0.380 0.000 0.015 Symbol Dimensions In Millimeters Dimensions In Inches 1.270 TYP 0.050 TYP TO-92 Suggested Pad Lay out www.cj-elec.com 2 C,Dec,2015
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