KTC3195 JIANGSU | Alldatasheet
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors KTC3195 TRANSIST OR (NPN)
FEATURES
z Small reverse transfer capacitance z Low noise Figure MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Para meter Value Unit V CBO Collector-Base Voltage 40 V V CEO Collector-Emitter Voltage 30 V V EBO Emitter-Base Voltage 4 V I C Collector Current -Continuous 20 mA P C Collector Power Dissipation 400 mW T J Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHAR ACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions M in T yp Max Unit Collector-base breakdown voltage V (BR)CBO I C =100μA, I E =0 40 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA, I B =0 30 V Emitter-base breakdown voltage V (BR)EBO I E =100μA, I C =0 4 V Collector cut-off current I CBO V CB =40V, I E =0 0.5 μA Emitter cut-off current I EBO V EB =4V, I C =0 0.5 μA DC current gain h FE V CE =6V, I C =1mA 40 200 Transition frequency f T V CE =6V, I C =1mA 300 550 MHz Reverse Transfer capacitance C re V CB =6V, I E =0, f=1MHz 0.7 pF Noise figure NF 2.5 5 dB Power Gain G pe V CE =6V, I C =1mA,f=100MHZ 18 dB CLASSIFIC ATION OF h FE Rank R O Y Range 40-80 70-1 40 100-200 TO-92S 1. EMITTER 2. COLLECTOR 3. BASE JC(T www.cj-elec.com 1 A,Jun,2014www.cj-elec.com D,Aug,2016 1 32
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.420 1.620 0.056 0.064 A1 0.660 0.860 0.026 0.034 b 0.330 0.480 0.013 0.019 b1 0.400 0.510 0.016 0.020 c 0.330 0.510 0.013 0.020 D 3.900 4.100 0.154 0.161 D1 2.280 2.680 0.090 0.106 E 3.050 3.250 0.120 0.128 e 1.270 TYP. 0.050 TYP. e1 2.440 2.640 0.096 0.104 L 15.100 15.500 0.594 0.610 θ 45° TYP. 45° TYP. www.cj-elec.com 2 D,Aug,2016
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