KTB1124 FOSHAN | Alldatasheet

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R e v . E M a r . - 2 0 1 6 DATA SHEET http://www.fsbrec.com 1 / 6 SOT-89 塑封封装 PNP半导体三极管。Silicon PNP transistor in a SOT-89 Plastic Package. 选用 MBIT 工艺规程，集电极-发射集饱和压降低,开关速度快，小电流电容和宽阔的安全工作区,可与 互补 KTD1624。 Adoption of MBIT processes, low collector-to-emitter saturation voltage, fast switching Speed, Large current capacity and wide ASO, Complementary to KTD1624. 用于电压调整器，转播驱动器，灯管驱动器，电力设备。 Voltage regulators ,relay drivers lamp drivers, electrical equipment. 内部等效电路 / Equivalent Circuit PIN1：Base PIN 2 ：Collector PIN 3 ：Emitter 印章代码 / M a r k i n g hFE Classifications Symbol A B C hFE Range 100～200 140 ～280 200 ～400 Marking HXA HXB HXC 描述 / D e s c r i p t i o n s 特征 / Features 用途 / Applications 引脚排列 / P i n n i n g

R e v . E M a r . - 2 0 1 6 DATA SHEET http://www.fsbrec.com 2 / 6 参数 Parameter 符号 Symbol 数值 Rating 单位 Unit Collector to Base Voltage VCBO -60 V Collector to Emitter Voltage VCEO -50 V Emitter to Base Voltage V EBO -6.0 V Collector Current - Continuous I C -3.0 A Collector Current – Continuous(Pluse) I CP -6.0 A Collector Power Dissipation P C 500 mW Collector Power Dissipation* *PC(Tc=25℃) 1.0 W Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55～150 ℃ *:Package mounted on ceramic substrate(250mm2×0.8t) 参数 Parameter 符号 Symbol 测试条件 Test Conditions 最小值 Min 典型值 Typ 最大值 Max 单位 Unit Collector to Base Breakdown Voltage VCBO I C=-10μA I E=0 -60 V Collector to Emitter Breakdown Voltage VCEO I C=-1.0mA I B=0 -50 V Emitter to Base Breakdown Voltage V EBO I E=-10μA I C=0 -6.0 V Collector Cut-Off Current I CBO V CB=-40V I E=0 -1.0 μA Emitter Base Cut-Off Current I EBO V EB=-4.0V I C=0 -1.0 μA DC Current Gain hFE(1) V CE=-2.0V I C=-100mA 100 400 hFE(2) V CE=-2.0V I C=-3.0A 35 Collector to Emitter Saturation Voltage VCE(sat) IC=-2.0A I B=-100mA -0.35 -0.7 V Base to Emitter Saturation Voltage V BE(sat) IC=-2.0A I B=-100mA -0.94 -1.2 V Transition Frequency f T V CE=-10V I C=-50mA 150 MHz Collector Output Capacitance C ob V CB=-10V f=1MHz 39 pF Turn-On Time t on -101B1=101B2=IC=1.0A 70 nS Storage Time t stg 450 nS Fall Time t f 35 nS 极限参数 / Absolute Maximum Ratings(Ta=25 ℃) 电性能参数 / Electrical Characteristics(Ta=25 ℃)

R e v . E M a r . - 2 0 1 6 DATA SHEET http://www.fsbrec.com 3 / 6 电参数曲线图 / Electrical Characteristic Curve

R e v . E M a r . - 2 0 1 6 DATA SHEET http://www.fsbrec.com 4 / 6 外形尺寸图 / Package Dimensions

R e v . E M a r . - 2 0 1 6 DATA SHEET http://www.fsbrec.com 5 / 6 印章说明 / Marking Instructions 说明： H： 为公司代码 X： 为型号代码 A： 为 h FE 分档代码 Note: H: Company Code. X: Product Type. A： h FE Classifications Symbol **: Lot No. Code, code change with Lot No. HXA

R e v . E M a r . - 2 0 1 6 DATA SHEET http://www.fsbrec.com 6 / 6 回流焊温度曲线图(无铅) / Temperature Profile for IR Reflow Soldering(Pb-Free) 说明： N o t e : 1、预热温度 25～150℃，时间 60～90sec; 1.Preheating:25~150 ℃, Time:60~90sec. 3、焊接制程冷却速度为 2～10℃/sec. 3. Cooling Speed: 2~10℃/sec. 耐焊接热试验条件 / Resistance to Soldering Heat Test Conditions 温度：260±5℃ 时间：10±1 sec. Temp.:260±5 ℃ Time:10±1 sec 包装规格 / Packaging SPEC. 卷盘包装 / R E E L Package Type 封装形式 Units 包装数量 Dimension 包装尺寸 (unit ：mm Units/Reel 只/卷盘 Reels/Inner Box 卷盘/盒 Units/Inner Box 只/盒 Inner Boxes/Outer Box 盒/箱 Units/Outer Box 只/箱 Reel Inner Box 盒 Outer Box 箱 SOT-89 1,000 7 7,000 8 56,000 7〞×12 180×120×180 385×257×392 使用说明 / N o t i c e s